2N5088

UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50mA. 1 TO-92 1:EMITTER 2:BASE 3:COLLECTOR MAXIMUM RATINGS (TA=25°C, unless otherwise noted) RATING SYMBOL 2N5088 2N5089 UNIT Collector-Emitter voltage VCEO 30 25 V Collector-Base voltage VCBO 35 30 V Emitter-base voltage VEBO 4.5 V Collector current-continuous Ic 100 mA Operating and Storage Tj, Tstg -55 ~ +150 °C Junction Temperature Range Note 1: These ratings are based on a maximum junction temperature of 150 degrees C. Note 2: These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. THERMAL CHARACTERISTICS (TA=25°C, unless otherwise noted) PARAMETER Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient SYMBOL PD RθJC RθJA MAX 625 5 83.3 200 UNIT mW mW/°C °C/W °C/W UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R201-040,A UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise noted) PARAMETER OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (note) 2N5088 2N5089 Collector-Base Breakdown Voltage 2N5088 2N5089 Collector Cut-Off Current 2N5088 2N5089 Emitter Cutoff Current SYMBOL V(BR)CEO TEST CONDITIONS IC=1.0mA, IB=0 MIN MAX UNIT 30 25 V(BR)CBO IC=100µA, IE=0 35 30 ICBO VCB=20V, IE=0 VCB=15V, IE=0 IEBO VEB=3.0V, IC=0 VEB=4.5V, IC=0 50 100 2N5088 2N5089 2N5088 2N5089 2N5088 2N5089 300 400 350 450 300 400 900 1200 50 50 V V V V nA nA nA nA ON CHARACTERISTICS DC Current Gain hFE VCE=5.0V, IC=100µA VCE=5.0V, IC=1.0mA VCE=5.0V, IC=10mA (NOTE) IC=10mA, IB=1.0mA IC=10mA, VCE=5.0V Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter On Voltage VBE(on) SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product fT VCE=5.0mA, Ic=500µA, f=20MHz Collector-Base Capacitance Ccb VCB=5.0V, IE=0, f=100kHz Emitter-Base Capacitance Ceb VEB=0.5V, Ic=0, f=100kHz Small-Signal Current Gain hFE VCE=5.0V, Ic=1.0mA, f=1.0kHz 2N5088 2N5089 Noise Figure NF VCE=5.0V, Ic=100µA, Rs=10kΩ, 2N5088 f=10KHz to 15.7kHz 2N5089 Note: Pulse Test: Pulse Width≤300µs, Duty Cycle≤2.0%. 0.5 0.8 50 4 10 350 450 1400 1800 3.0 2.0 V V MHz pF pF dB dB UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R201-040,A UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERISTICS UTC UNISONIC TECHNOLOGIES CO., LTD. 3 QW-R201-040,A UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO., LTD. 4 QW-R201-040,A UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO., LTD. 5 QW-R201-040,A UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO., LTD. 6 QW-R201-040,A