2SB1151G-X-TN3-R

UNISONIC TECHNOLOGIES CO., LTD 2SB1151 LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES *High Power Dissipation *Complementary to 2SD1691 PNP SILICON TRANSISTOR ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SB1151L-x-AA3-R 2SB1151G-x-AA3-R 2SB1151L-x-T60-K 2SB1151G-x-T60-K 2SB1151L-x-TN3-R 2SB1151G-x-TN3-R Package SOT-223 TO-126 TO-252 Pin Assignment 1 2 3 E C B E C B B C E Packing Tape Reel Bulk Tape Reel 2SB1511L-x-AA3-R (1) K: Bulk, R: Tape Reel (1)Packing Type (2)Package Type (3)Rank (4)Lead Free (2) AA3: SOT-223, T60: TO-126, TN3: TO-252 (3) x: refer to Classification of hFE2 (4) G: Halogen Free, L: Lead Free www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 1 of 4 QW-R204-022.C 2SB1151 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage SYMBOL VCBO VCEO VEBO IC ICP IB PNP SILICON TRANSISTOR RATINGS UNIT -60 V -60 V -7 V DC -5 A Collector Current Pulse(Note 2) -8 A Base Current -1 A SOT-223 1 W PD TO-126 1.5 W Power Dissipation (Ta=25°C) 2 W TO-252 Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2.PW≤10ms, Duty Cycle≤50% ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain SYMBOL BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT) VBE(SAT) hFE 1 hFE 2 hFE 3 tON tSTG tF TEST CONDITIONS IC=-100uA, IE=0 IC=-1mA, IB=0 IE=-100uA, Ic=0 VCB=-50V, IE=0 VEB=-7V, IC=0 IC=-2A, IB=-0.2A IC=-2A, IB=-0.2A VCE=-1V, IC=-0.1A VCE=-1V, IC=-2A VCE=-2V, IC=-5A MIN -60 -60 -7 TYP MAX UNIT V V V -10 µA -10 µA -0.14 -0.3 V -0.9 -1.2 V 400 60 160 50 0.15 0.78 0.18 Turn On Time Switching Time Storage Time Fall Time 1 2.5 1 µS µS µS Pulse test : PW≤350 µS, Duty Cycle≤2% Pulse CLASSIFICATION OF hFE2 RANK RANGE O 160 ~ 320 Y 200 ~ 400 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R204-022.C Collector Current, IC（A） Collector Current, IC（A） Power Dissipation, PD (W) 2SB1151 IB = -20 D 2m 10 s* ms 20 * 0m s 0m A is d ite m Li n ted tio m i pa Li si /b S TYPICAL CHARACTERISTICS PNP SILICON TRANSISTOR D si is pa tio n Li m ite d UNISONIC TECHNOLOGIES CO., LTD VCEO( MAX) www.unisonic.com.tw Collector Current, IC（A） IC Derating, dT (%) DC Current Gain, hFE 3 of 4 QW-R204-022.C 2SB1151 TYPICAL CHARACTERISTICS PNP SILICON TRANSISTOR Staturation Voltage, VBE(SAT), VCE(SAT) (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R204-022.C