10ETF..FPPbF Soft Recovery Series
Vishay High Power Products
Fast Soft Recovery Rectifier Diode, 10 A
FEATURES/DESCRIPTION
Base cathode
2
The 10ETF06FPPbF fast soft recovery rectifier Available series has been optimized for combined short reverse recovery time and low forward voltage RoHS* COMPLIANT drop. The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions.
3 Anode
TO-220AC FULL-PAK
1 Cathode
The fully isolated package (VINS = 2500 VRMS) is UL E78996 approved. This product series has been designed and qualified for industrial level and lead (Pb)-free.
PRODUCT SUMMARY
VRRM VF at 10 A trr 200 to 600 V < 1.2 V 50 ns
APPLICATIONS
• Output rectification and choppers and converters freewheeling in inverters,
• Input rectifications where severe restrictions on conducted EMI should be met
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL VRRM IF(AV) IFSM trr VF TJ 1 A, 100 A/µs 10 A, TJ = 25 °C Sinusoidal waveform CHARACTERISTICS VALUES 200 to 600 10 150 50 1.2 - 40 to 150 UNITS V A ns V °C
VOLTAGE RATINGS
PART NUMBER 10ETF02FPPbF 10ETF04FPPbF 10ETF06FPPbF VRRM, MAXIMUM PEAK REVERSE VOLTAGE V 200 400 600 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 300 500 700 2 IRRM AT 150 °C mA
ABSOLUTE MAXIMUM RATINGS
PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current Maximum I2t for fusing Maximum I2√t for fusing SYMBOL IF(AV) IFSM I2t I2√t TEST CONDITIONS TC = 98 °C, 180° conduction half sine wave 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied t = 0.1 to 10 ms, no voltage reapplied VALUES 10 150 160 112.5 160 1600 A2s A2√s A UNITS
* Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 94089 Revision: 28-May-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 1
10ETF..FPPbF Soft Recovery Series
Vishay High Power Products
ELECTRICAL SPECIFICATIONS
PARAMETER Maximum forward voltage drop Forward slope resistance Threshold voltage Maximum reverse leakage current SYMBOL VFM rt VF(TO) IRM TEST CONDITIONS 10 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C TJ = 150 °C VALUES 1.2 23.5 0.85 VR = Rated VRRM 0.1 3.0 UNITS V mΩ V mA
Fast Soft Recovery Rectifier Diode, 10 A
RECOVERY CHARACTERISTICS
PARAMETER Reverse recovery time Reverse recovery current Reverse recovery charge Snap factor SYMBOL trr Irr Qrr S TEST CONDITIONS IF at 10 Apk 25 A/µs 25 °C VALUES 145 2.75 0.32 0.6 UNITS ns A µC
dir dt Qrr IRM(REC) IFM trr t
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER Maximum junction and storage temperature range Maximum thermal resistance junction to case Maximum thermal resistance junction to ambient Typical thermal resistance, case to heatsink Approximate weight minimum maximum Case style TO-220AC FULL-PAK (94/V0) SYMBOL TJ, TStg RthJC RthJA RthCS Mounting surface, smooth and greased DC operation TEST CONDITIONS VALUES - 40 to 150 2.5 62 0.5 2 0.07 6 (5) 12 (10) 10ETF06FP g oz. kgf · cm (lbf · in) °C/W UNITS °C
Mounting torque Marking device
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For technical questions, contact: diodes-tech@vishay.com
Document Number: 94089 Revision: 28-May-08
10ETF..FPPbF Soft Recovery Series
Fast Soft Recovery Rectifier Diode, 10 A
150 20
Vishay High Power Products
Maximum Average Forward Power Loss (W)
Maximum Allowable Case Temperature (°C)
140 130
10ETF.. Series RthJC (DC) = 2.5 °C/W
16
10ETF.. Series TJ = 150 °C 30°
90° 60° 120° 180° DC
Ø
120 110 100 90 30° 80 0 2 4 6 60°
Conduction angle
12
RMS limit
8
Ø
4
Conduction period
90° 120° 8 10
180° 0 12 0 4 8 12 16
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
150
160
Maximum Allowable Case Temperature (°C)
Peak Half Sine Wave Forward Current (A)
140 130
10ETF.. Series RthJC (DC) = 2.5 °C/W
140 120 100 80 60
At any rated load condition and with rated VRRM applied following surge. Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s
Ø
Conduction period 120 110 100 30° 60° 90 0 2 4 6 8 10 12 14 16 18 90° 120° 180° DC
10ETF.. Series
40 1 10 100
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current
16 120°
180 90° 160 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied
Maximum Average Forward Power Loss (W)
14 12 10 8 6 RMS limit 60° 30°
Peak Half Sine Wave Forward Current (A)
180°
140 120 100 80 60 40 0.01 10ETF.. Series
Ø
4 2 0 0 2 4 6
Conduction angle 10ETF.. Series TJ = 150 °C 8 10
0.1
1
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current
Document Number: 94089 Revision: 28-May-08
For technical questions, contact: diodes-tech@vishay.com
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10ETF..FPPbF Soft Recovery Series
Vishay High Power Products
100 10ETF.. Series 1.2
Fast Soft Recovery Rectifier Diode, 10 A
1.4 10ETF.. Series TJ = 25 °C IFM = 20 A
Instantaneous Forward Current (A)
Qrr - Maximum Reverse Recovery Charge (µC)
1.0 IFM = 10 A 0.8 0.6 0.4 0.2 IFM = 1 A IFM = 5 A IFM = 2 A
10
TJ = 150 °C TJ = 25 °C
1 0.5
0 1.0 1.5 2.0 2.5 3.0 0 40 80 120 160 200
Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C
0.20
2.5 10ETF.. Series TJ = 150 °C IFM = 20 A IFM = 10 A 1.5 IFM = 5 A 1.0 IFM = 2 A 0.5 IFM = 1 A 200 0 0 40 80 120 160 200
trr - Maximum Reverse Recovery Time (µs)
Qrr - Maximum Reverse Recovery Charge (µC)
0.15
IFM = 20 A IFM = 10 A
2.0
0.10
IFM = 5 A IFM = 2 A 10ETF.. Series TJ = 25 °C IFM = 1 A
0.05
0 0 40 80 120 160
dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 8 - Recovery Time Characteristics, TJ = 25 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C
0.4 10ETF.. Series TJ = 150 °C
15 10ETF.. Series TJ = 25 °C IFM = 20 A IFM = 10 A IFM = 5 A IFM = 2 A 6 IFM = 1 A 3
trr - Maximum Reverse Recovery Time (µs)
0.3
Irr - Maximum Reverse Recovery Current (A)
200
12
IFM = 20 A 0.2 IFM = 10 A IFM = 5 A 0.1 IFM = 2 A IFM = 1 A 0 0 40 80 120 160
9
0 0 40 80 120 160 200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, TJ = 150 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, TJ = 25 °C
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For technical questions, contact: diodes-tech@vishay.com
Document Number: 94089 Revision: 28-May-08
10ETF..FPPbF Soft Recovery Series
Fast Soft Recovery Rectifier Diode, 10 A
20 10ETF.. Series TJ = 150 °C IFM = 20 A IFM = 10 A 12 IFM = 5 A IFM = 2 A 8 IFM = 1 A 4
Vishay High Power Products
Irr - Maximum Reverse Recovery Current (A)
16
0 0 40 80 120 160 200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
ZthJC - Transient Thermal Impedance (°C/W)
10 Steady state value (DC operation)
1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08
10ETF.. Series
Single pulse 0.1 0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s) Fig. 14 - Thermal Impedance ZthJC Characteristics
Document Number: 94089 Revision: 28-May-08
For technical questions, contact: diodes-tech@vishay.com
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10ETF..FPPbF Soft Recovery Series
Vishay High Power Products
ORDERING INFORMATION TABLE
Fast Soft Recovery Rectifier Diode, 10 A
Device code
10
1 1 2 3 4 5 6 7 -
E
2
T
3
F
4
06
5
FP
6
PbF
7
Current rating (10 = 10 A) Circuit configuration: E = Single diode Package: T = TO-220AC Type of silicon: F = Fast soft recovery rectifier Voltage code x 100 = VRRM FULL-PAK None = Standard production PbF = Lead (Pb)-free 02 = 200 V 04 = 400 V 06 = 600 V
LINKS TO RELATED DOCUMENTS Dimensions Part marking information http://www.vishay.com/doc?95005 http://www.vishay.com/doc?95009
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For technical questions, contact: diodes-tech@vishay.com
Document Number: 94089 Revision: 28-May-08
Outline Dimensions
www.vishay.com DIMENSIONS in millimeters
10.6 10.4 Hole Ø 3.4 3.1 2.8 2.6
Vishay Semiconductors
3.7 3.2
7.31 6.91
16.0 15.8
16.4 15.4
10°
3.3 3.1 13.56 13.05
2.54 TYP.
0.9 0.7 2.54 TYP.
0.61 0.38 2.85 2.65 Lead assignments Diodes 1 + 2 - Cathode 3 - Anode 1.4 1.3
1.15 TYP. 1.05
R 0.7 (2 places) R 0.5
4.8 4.6
5° ± 0.5°
5° ± 0.5°
Conforms to JEDEC outline TO-220 FULL-PAK
Revision: 20-Jul-11
Document Number: 95005 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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Document Number: 91000 Revision: 11-Mar-11
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