20ETF10FPPBF

20ETF10FPPbF, 20ETF12FPPbF Soft Recovery Series Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 20 A FEATURES Base cathode 2 • The fully isolated package (VINS = 2500 VRMS) is UL E78996 approved • Designed and qualified for industrial level APPLICATIONS TO-220AC FULL-PAK 1 Cathode 3 Anode • Output rectification and choppers and converters freewheeling in inverters, on • Input rectifications where severe conducted EMI should be met restrictions PRODUCT SUMMARY VF at 20 A IFSM VRRM < 1.31 V 355 A 1000 V to 1200 V DESCRIPTION The 20ETF..FPPbF fast soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. MAJOR RATINGS AND CHARACTERISTICS SYMBOL VRRM IF(AV) IFSM trr VF TJ 1 A, 100 A/μs 20 A, TJ = 25 °C Range Sinusoidal waveform CHARACTERISTICS VALUES 1000 to 1200 20 355 95 1.31 - 40 to 150 UNITS V A ns V °C VOLTAGE RATINGS PART NUMBER 20ETF10FPPbF 20ETF12FPPbF VRRM, MAXIMUM PEAK REVERSE VOLTAGE V 1000 1200 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 1100 1300 IRRM AT 150 °C mA 6 ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current Maximum I2t for fusing Maximum I2t for fusing SYMBOL IF(AV) IFSM I2t I2t TEST CONDITIONS TC = 97 °C, 180° conduction half sine wave 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied t = 0.1 ms to 10 ms, no voltage reapplied VALUES 20 300 355 450 635 6350 A2s A2s A UNITS * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 93222 Revision: 26-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 20ETF10FPPbF, 20ETF12FPPbF Soft Recovery Series Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 20 A ELECTRICAL SPECIFICATIONS PARAMETER Maximum forward voltage drop Forward slope resistance Threshold voltage Maximum reverse leakage current SYMBOL VFM rt VF(TO) IRM TEST CONDITIONS 20 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C TJ = 150 °C VALUES 1.31 11.88 0.93 0.1 VR = Rated VRRM mA 6 UNITS V m V RECOVERY CHARACTERISTICS PARAMETER Reverse recovery time Reverse recovery current Reverse recovery charge Snap factor SYMBOL trr Irr Qrr S TEST CONDITIONS IF at 20 Apk 25 A/μs 25 °C Typical VALUES 400 6.1 1.7 0.6 UNITS ns A μC dir dt IFM ta trr tb Qrr IRM(REC) t THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, junction to ambient Typical thermal resistance, case to heatsink Approximate weight 0.07 minimum Mounting torque maximum Marking device Case style TO-220AC FULL-PAK 20ETF12FP 12 (10) 6 (5) oz. kgf · cm (lbf · in) SYMBOL TJ, TStg RthJC RthJA RthCS Mounting surface, smooth and greased DC operation TEST CONDITIONS VALUES - 40 to 150 1.5 62 1.5 2 g °C/W UNITS °C 20ETF10FP www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 93222 Revision: 26-Jul-10 20ETF10FPPbF, 20ETF12FPPbF Soft Recovery Series Fast Soft Recovery Rectifier Diode, 20 A 150 RthJC (DC) = 0.9 K/W 35 Vishay Semiconductors Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) 140 30 25 20 180° 120° 90° 60° 30° RMS limit 130 Ø Conduction angle 120 30° 110 60° 90° 120° 180° 100 0 5 10 15 20 25 15 10 5 0 0 5 10 15 20 25 Ø Conduction period TJ = 150 °C Average Forward Current (A) Fig. 1 - Current Rating Characteristics Average Forward Current (A) Fig. 4 - Forward Power Loss Characteristics 150 RthJC (DC) = 0.9 K/W 350 300 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s Maximum Allowable Case Temperature (°C) 140 Ø Peak Half Sine Wave Forward Current (A) 250 200 150 100 130 Conduction period 120 60° 110 30° 90° 120° 180° 100 0 5 10 15 20 25 30 35 DC 50 1 10 100 Average Forward Current (A) Fig. 2 - Current Rating Characteristics Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current 35 400 180° 120° 90° 60° 30° RMS limit 350 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied Maximum Average Forward Power Loss (W) 30 25 20 15 10 5 0 0 Peak Half Sine Wave Forward Current (A) 300 250 200 150 100 50 0.01 Ø Conduction angle TJ = 150 °C 5 10 15 20 25 0.1 1 Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Document Number: 93222 Revision: 26-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 20ETF10FPPbF, 20ETF12FPPbF Soft Recovery Series Vishay Semiconductors 1000 Fast Soft Recovery Rectifier Diode, 20 A Instantaneous Forward Current (A) 100 10 TJ = 25 °C TJ = 150 °C 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics 0.7 TJ = 25 °C 0.6 6 TJ = 25 °C IFM = 30 A 5 IFM = 20 A 4 3 IFM = 10 A 2 1 0 0 50 100 150 200 0 50 100 150 200 IFM = 5 A IFM = 1 A 0.5 0.4 0.3 0.2 0.1 0 IFM = 5 A IFM = 1 A dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 8 - Recovery Time Characteristics, TJ = 25 °C Qrr - Maximum Reverse Recovery Charge (µC) trr - Maximum Reverse Recovery Time (µs) IFM = 30 A IFM = 20 A IFM = 10 A dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C 1.2 TJ = 150 °C 10 TJ = 150 °C IFM = 30 A IFM = 20 A trr - Maximum Reverse Recovery Time (µs) Qrr - Maximum Reverse Recovery Charge (µC) 0.9 IFM = 30 A IFM = 20 A IFM = 10 A IFM = 5 A IFM = 1 A 8 6 IFM = 10 A 4 IFM = 5 A 2 IFM = 1 A 0.6 0.3 0 0 50 100 150 200 0 0 50 100 150 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 9 - Recovery Time Characteristics, TJ = 150 °C dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C www.vishay.com 4 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 93222 Revision: 26-Jul-10 20ETF10FPPbF, 20ETF12FPPbF Soft Recovery Series Fast Soft Recovery Rectifier Diode, 20 A 25 TJ = 25 °C IFM = 30 A IFM = 20 A IFM = 10 A IFM = 5 A 10 IFM = 1 A 5 35 TJ = 150 °C 30 IFM = 30 A IFM = 20 A IFM = 10 A IFM = 5 A Vishay Semiconductors Irr - Maximum Reverse Recovery Current (A) Irr - Maximum Reverse Recovery Current (A) 20 25 20 15 10 15 IFM = 1 A 5 0 0 50 100 150 200 0 0 50 100 150 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 12 - Recovery Current Characteristics, TJ = 25 °C dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 13 - Recovery Current Characteristics, TJ = 150 °C ZthJC - Transient Thermal Impedance (K/W) 1 Steady state value (DC operation) 0.1 Single pulse D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 20ETF.. Series 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Fig. 14 - Thermal Impedance ZthJC Characteristics Document Number: 93222 Revision: 26-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 5 20ETF10FPPbF, 20ETF12FPPbF Soft Recovery Series Vishay Semiconductors ORDERING INFORMATION TABLE Device code Fast Soft Recovery Rectifier Diode, 20 A 20 1 1 2 3 4 5 6 7 - E 2 T 3 F 4 12 5 FP 6 PbF 7 Current rating (20 = 20 A) Circuit configuration: E = Single diode Package: T = TO-220AC Type of silicon: F = Fast soft recovery rectifier Voltage ratings FULL-PAK None = Standard production PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS 10 = 1000 V 12 = 1200 V Dimensions Part marking information www.vishay.com/doc?95005 www.vishay.com/doc?95009 www.vishay.com 6 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 93222 Revision: 26-Jul-10 Outline Dimensions www.vishay.com DIMENSIONS in millimeters 10.6 10.4 Hole Ø 3.4 3.1 2.8 2.6 Vishay Semiconductors 3.7 3.2 7.31 6.91 16.0 15.8 16.4 15.4 10° 3.3 3.1 13.56 13.05 2.54 TYP. 0.9 0.7 2.54 TYP. 0.61 0.38 2.85 2.65 Lead assignments Diodes 1 + 2 - Cathode 3 - Anode 1.4 1.3 1.15 TYP. 1.05 R 0.7 (2 places) R 0.5 4.8 4.6 5° ± 0.5° 5° ± 0.5° Conforms to JEDEC outline TO-220 FULL-PAK Revision: 20-Jul-11 Document Number: 95005 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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