10ETS08

10ETS08PbF, 10ETS12PbF High Voltage Series Vishay Semiconductors Input Rectifier Diode, 10 A FEATURES Base cathode 2 • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level APPLICATIONS 1 Cathode 3 Anode TO-220AC • Input rectification • Vishay Semiconductors switches and output rectifiers which are available in identical package outlines PRODUCT SUMMARY VF at 10 A IFSM VRRM < 1.1 V 200 A 800 V/1200 V DESCRIPTION The 10ETS..PbF rectifier series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable operation up to 150 °C junction temperature. OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS Capacitive input filter TA = 55 °C, TJ = 125 °C common heatsink of 1 °C/W SINGLE-PHASE BRIDGE 12.0 THREE-PHASE BRIDGE 16.0 UNITS A MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) VRRM IFSM VF TJ 10 A, TJ = 25 °C CHARACTERISTICS Sinusoidal waveform VALUES 10 800/1200 200 1.1 - 40 to 150 UNITS A V A V °C VOLTAGE RATINGS PART NUMBER 10ETS08PbF 10ETS12PbF VRRM, MAXIMUM PEAK REVERSE VOLTAGE V 800 1200 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 900 1300 IRRM AT 150 °C mA 0.5 ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current Maximum I2t for fusing Maximum I2t for fusing SYMBOL IF(AV) IFSM I2t I2t TEST CONDITIONS TC = 105 °C, 180° conduction half sine wave 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied t = 0.1 ms to 10 ms, no voltage reapplied VALUES 10 170 200 130 145 1450 A2s A2s A UNITS * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 94337 Revision: 22-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 10ETS08PbF, 10ETS12PbF High Voltage Series Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER Maximum forward voltage drop Forward slope resistance Threshold voltage Maximum reverse leakage current SYMBOL VFM rt VF(TO) IRM TEST CONDITIONS 10 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C TJ = 150 °C VR = Rated VRRM VALUES 1.1 20 0.82 0.05 0.50 UNITS V m V mA Input Rectifier Diode, 10 A THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, junction to ambient (PCB mount) Soldering temperature Approximate weight SYMBOL TJ, TStg RthJC RthJA TS (1) TEST CONDITIONS VALUES - 40 to 150 UNITS °C °C/W °C g oz. DC operation 2.5 62 240 2 0.07 Marking device Case style TO-220AC 10ETS08 10ETS12 Note (1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W For recommended footprint and soldering techniques refer to application note #AN-994 www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94337 Revision: 22-Jul-10 10ETS08PbF, 10ETS12PbF High Voltage Series Input Rectifier Diode, 10 A Vishay Semiconductors 150 20 Maximum Average Forward Power Loss (W) 140 10ETS.. Series RthJC (DC) = 2.5 °C/W 18 16 14 12 10 8 6 4 2 0 Maximum Allowable Case Temperature (°C) 130 Ø 120 110 100 Conduction angle DC 180° 120° 90° 60° 30° Ø Conduction period RMS limit 0 2 4 6 8 10ETS.. Series TJ = 150 °C 60° 90 80 90° 120° 180° 30° 0 2 4 6 8 10 12 10 12 14 16 Average Forward Current (A) Fig. 1 - Current Rating Characteristics Average Forward Current (A) Fig. 4 - Forward Power Loss Characteristics 150 140 130 120 110 100 200 10ETS.. Series RthJC(DC) = 2.5 °C/W 180 Maximum Allowable Case Temperature (°C) Peak Half Sine Wave Forward Current (A) 160 140 120 100 80 60 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s Ø Conduction period DC 120° 30° 60° 90° 6 8 10 180° 10ETS.. Series 90 40 0 2 4 12 14 16 18 1 10 100 Average Forward Current (A) Fig. 2 - Current Rating Characteristics Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current 16 240 180° 120° 90° 60° 30° RMS limit Maximum Average Forward Power Loss (W) 14 12 10 8 6 4 2 0 220 Peak Half Sine Wave Forward Current (A) 200 180 160 140 120 100 80 60 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied Ø Conduction angle 10ETS.. Series TJ = 150 °C 0 2 4 6 8 10 10ETS.. Series 40 0.01 0.1 1.0 Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitve Surge Current Document Number: 94337 Revision: 22-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 10ETS08PbF, 10ETS12PbF High Voltage Series Vishay Semiconductors Instantaneous Forward Current (A) 100 Input Rectifier Diode, 10 A TJ = 25 °C TJ = 150 °C 10 10ETS.. Series 1 0 0.5 1.0 1.5 2.0 2.5 3.0 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics 10 ZthJC - Transient Thermal Impedance (°C/W) Steady state value (DC operation) 1 Single pulse D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 10ETS.. Series 0.1 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics www.vishay.com 4 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94337 Revision: 22-Jul-10 10ETS08PbF, 10ETS12PbF High Voltage Series Input Rectifier Diode, 10 A Vishay Semiconductors ORDERING INFORMATION TABLE Device code 10 1 1 2 3 - E 2 T 3 S 4 12 5 PbF 6 Current rating (10 = 10 A) Circuit configuration: E = Single diode Package: T = TO-220AC 4 5 6 - Type of silicon: S = Standard recovery rectifier Voltage code x 100 = VRRM None = Standard production PbF = Lead (Pb)-free 08 = 800 V 12 = 1200 V LINKS TO RELATED DOCUMENTS Dimensions Part marking information www.vishay.com/doc?95221 www.vishay.com/doc?95224 Document Number: 94337 Revision: 22-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 5 Outline Dimensions Vishay Semiconductors TO-220AC DIMENSIONS in millimeters and inches B Seating plane ØP 0.014 M B A M (6) H1 (7) Detail B D1 1 L3 L4 L 23 C E1 (6) Lead assignments Diodes 1 + 2 - Cathode 3 - Anode c e1 0.015 M B A M A2 A Conforms to JEDEC outline TO-220AC θ A A A1 H1 D2 (6) 2 x b2 Detail B 2xb E Thermal pad C C 1 2 D 3 D L1 (6) E E2 (7) Q A (6) D Lead tip View A - A SYMBOL A A1 A2 b b1 b2 b3 c c1 D D1 D2 E MILLIMETERS MIN. 4.25 1.14 2.56 0.69 0.38 1.20 1.14 0.36 0.36 14.85 8.38 11.68 10.11 MAX. 4.65 1.40 2.92 1.01 0.97 1.73 1.73 0.61 0.56 15.25 9.02 12.88 10.51 INCHES MIN. 0.167 0.045 0.101 0.027 0.015 0.047 0.045 0.014 0.014 0.585 0.330 0.460 0.398 MAX. 0.183 0.055 0.115 0.040 0.038 0.068 0.068 0.024 0.022 0.600 0.355 0.507 0.414 NOTES SYMBOL E1 E2 e e1 MILLIMETERS MIN. 6.86 2.41 4.88 6.09 13.52 3.32 1.78 0.76 3.54 2.60 MAX. 8.89 0.76 2.67 5.28 6.48 14.02 3.82 2.13 1.27 3.73 3.00 INCHES MIN. 0.270 0.095 0.192 0.240 0.532 0.131 0.070 0.030 0.139 0.102 MAX. 0.350 0.030 0.105 0.208 0.255 0.552 0.150 0.084 0.050 0.147 0.118 NOTES 6 7 4 H1 L 6, 7 4 L1 L3 2 4 3 L4 ØP Q  2 6 3, 6 90° to 93° 90° to 93° Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimension: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 (7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed (8) Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline Document Number: 95221 Revision: 07-Mar-11 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1