10TTS08S

10TTS08S High Voltage Series Vishay High Power Products Surface Mountable Phase Control SCR, 10 A DESCRIPTION/FEATURES 2 (A) The 10TTS08S High Voltage Series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 °C junction temperature. Typical applications are in input rectification (soft start) and these products are designed to be used with Vishay HPP input diodes, switches and output rectifiers which are available in identical package outlines. This product has been designed and qualified for industrial level. D2PAK 1 (K) (G) 3 PRODUCT SUMMARY VT at 6.5 A ITSM VRRM < 1.15 V 140 A 800 V OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS NEMA FR-4 or G-10 glass fabric-based epoxy with 4 oz. (140 µm) copper Aluminum IMS, RthCA = 15 °C/W Aluminum IMS with heatsink, RthCA = 5 °C/W Note • TA = 55 °C, TJ = 125 °C, footprint 300 mm2 SINGLE-PHASE BRIDGE 2.5 6.3 14.0 THREE-PHASE BRIDGE 3.5 9.5 18.5 A UNITS MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) IRMS VRRM/VDRM ITSM VT dV/dt dI/dt TJ Range 6.5 A, TJ = 25 °C TEST CONDITIONS Sinusoidal waveform VALUES 6.5 A 10 800 140 1.15 150 100 - 40 to 125 V A V V/µs A/µs °C UNITS VOLTAGE RATINGS PART NUMBER 10TTS08S VRRM, MAXIMUM PEAK REVERSE VOLTAGE V 800 VDRM, MAXIMUM PEAK DIRECT VOLTAGE V 800 IRRM/IDRM AT 125 °C mA 1.0 Document Number: 93691 Revision: 19-Jun-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 1 10TTS08S High Voltage Series Vishay High Power Products Surface Mountable Phase Control SCR, 10 A ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average on-state current Maximum RMS on-state current Maximum peak, one-cycle, non-repetitive surge current Maximum I2t for fusing Maximum I2√t for fusing Maximum on-state voltage drop On-state slope resistance Threshold voltage Maximum reverse and direct leakage current Typical holding current Maximum latching current Maximum rate of rise of off-state voltage Maximum rate of rise of turned-on current SYMBOL IT(AV) IT(RMS) ITSM I2 t I2√t VTM rt VT(TO) IRM/IDM IH IL dV/dt dI/dt TEST CONDITIONS TC = 112 °C, 180° conduction half sine wave 10 ms sine pulse, rated VRRM applied, TJ = 125 °C 10 ms sine pulse, no voltage reapplied, TJ = 125 °C 10 ms sine pulse, rated VRRM applied, TJ = 125 °C 10 ms sine pulse, no voltage reapplied, TJ = 125 °C t = 0.1 to 10 ms, no voltage reapplied, TJ = 125 °C 6.5 A, TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C VR = Rated VRRM/VDRM VALUES 6.5 10 120 140 72 100 1000 1.15 17.3 0.85 0.05 1.0 30 50 150 100 V/µs A/µs mA A2 s A2√s V mΩ V A UNITS Anode supply = 6 V, resistive load, initial IT = 1 A Anode supply = 6 V, resistive load TJ = 25 °C TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak negative gate voltage SYMBOL PGM PG(AV) +IGM -VGM Anode supply = 6 V, resistive load, TJ = - 65 °C Maximum required DC gate current to trigger IGT Anode supply = 6 V, resistive load, TJ = 25 °C Anode supply = 6 V, resistive load, TJ = 125 °C Anode supply = 6 V, resistive load, TJ = - 65 °C Maximum required DC gate voltage to trigger Maximum DC gate voltage not to trigger Maximum DC gate current not to trigger VGT VGD IGD Anode supply = 6 V, resistive load, TJ = 25 °C Anode supply = 6 V, resistive load, TJ = 125 °C TJ = 125 °C, VDRM = Rated value TEST CONDITIONS VALUES 8.0 2.0 1.5 10 20 15 10 1.2 1 0.7 0.2 0.1 mA V mA UNITS W A V SWITCHING PARAMETER Typical turn-on time Typical reverse recovery time Typical turn-off time SYMBOL tgt trr tq TJ = 25 °C TJ = 125 °C TEST CONDITIONS VALUES 0.8 3 100 µs UNITS www.vishay.com 2 For technical questions, contact: diodes-tech@vishay.com Document Number: 93691 Revision: 19-Jun-08 10TTS08S High Voltage Series Surface Mountable Phase Control SCR, 10 A THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Soldering temperature Maximum thermal resistance, junction to case Typical thermal resistance, junction to ambient (PCB mount) Approximate weight Marking device Case style D2PAK (SMD-220) SYMBOL TJ, TStg TS RthJC RthJA (1) For 10 s (1.6 mm from case) DC operation TEST CONDITIONS VALUES - 40 to 125 240 1.5 °C/W 40 2 0.07 10TTS08S g oz. UNITS °C Vishay High Power Products Note (1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 µm) copper 40 °C/W For recommended footprint and soldering techniques refer to application note #AN-994 Document Number: 93691 Revision: 19-Jun-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 3 10TTS08S High Voltage Series Vishay High Power Products Surface Mountable Phase Control SCR, 10 A Maximum Average On-state Power Loss (W) 12 10 8 6 RMS Limit 4 2 0 0 2 4 6 8 10 12 Average On-state Current (A) Conduction Period Maximum Allowable Case Temperature (°C) 125 10TTS08 R thJC (DC) = 1.5 K/W 120 Conduction Angle DC 180° 120° 90° 60° 30° 115 30° 60° 110 90° 120° 180° 105 0 1 2 3 4 5 6 7 Average On-state Current (A) 10TTS08 TJ = 125°C Fig. 1 - Current Rating Characteristics Fig. 4 - On-State Power Loss Characteristics Maximum Allowable Case Temperature (°C) 10TTS08 R thJC (DC) = 1.5 K/W Peak Half Sine Wave On-state Current (A) 125 130 120 110 100 90 80 70 60 1 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. 120 Conduction Period Initial TJ = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 115 30° 60° 110 90° 120° 180° DC 105 0 2 4 6 8 10 12 Average On-state Current (A) 10TTS08 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 2 - Current Rating Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current Peak Half Sine Wave On-state Current (A) Maximum Average On-state Power Loss (W) 8 7 6 5 4 3 Conduction Angle 150 140 130 120 110 100 90 80 70 60 180° 120° 90° 60° 30° RMS Limit Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125°C No Voltage Reapplied Rated VRRM Reapplied 2 1 0 0 1 2 3 4 5 6 7 Average On-state Current (A) 10TTS08 TJ = 125°C 10TTS08 50 0.01 0.1 Pulse Train Duration (s) 1 Fig. 3 - On-State Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current www.vishay.com 4 For technical questions, contact: diodes-tech@vishay.com Document Number: 93691 Revision: 19-Jun-08 10TTS08S High Voltage Series Surface Mountable Phase Control SCR, 10 A 1000 Instantaneous On-state Current (A) Vishay High Power Products 10TTS08 100 10 TJ = 25°C TJ = 125°C 1 0.5 1 1.5 2 2.5 3 3.5 Instantaneous On-state Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics 10 Transient Thermal Impedance Z thJC (°C/W) Steady State Value (DC Operation) 1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single Pulse 10TTS08 0.01 0.0001 0.1 0.001 0. 01 Square Wave Pulse Duration (s) 0.1 1 Fig. 8 - Thermal Impedance ZthJC Characteristics Document Number: 93691 Revision: 19-Jun-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 5 10TTS08S High Voltage Series Vishay High Power Products ORDERING INFORMATION TABLE Surface Mountable Phase Control SCR, 10 A Device code 10 1 1 2 3 4 5 6 7 - T 2 T 3 S 4 08 5 S 6 TRL 7 8 Current rating, RMS value Circuit configuration: T = Single thyristor Package: T = TO-220AC Type of silicon: S = Converter grade - Voltage code x 100 = VRRM S = TO-220 D2PAK (SMD-220) version Tape and reel option: TRL = Left reel TRR = Right orientation reel 8 - None = Standard production PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions Part marking information Packaging information http://www.vishay.com/doc?95046 http://www.vishay.com/doc?95054 http://www.vishay.com/doc?95032 www.vishay.com 6 For technical questions, contact: diodes-tech@vishay.com Document Number: 93691 Revision: 19-Jun-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1