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180RKI80

180RKI80

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    180RKI80 - Phase Control Thyristors (Stud Version), 180 A - Vishay Siliconix

  • 数据手册
  • 价格&库存
180RKI80 数据手册
180/181RKI Series Vishay High Power Products Phase Control Thyristors (Stud Version), 180 A FEATURES • Hermetic glass-metal seal • International standard case TO-209AB (TO-93) • RoHS compliant • Designed and qualified for industrial level TO-209AB (TO-93) RoHS COMPLIANT TYPICAL APPLICATIONS • DC motor controls PRODUCT SUMMARY IT(AV) 180 A • Controlled DC power supplies • AC controllers MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) IT(RMS) ITSM I2 t VDRM/VRRM tq TJ Typical 50 Hz 60 Hz 50 Hz 60 Hz TEST CONDITIONS VALUES 180 TC 80 285 3800 4000 72 66 400 to 1000 100 - 40 to 125 UNITS A °C A A kA2s V µs °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 40 180/181RKI 80 100 VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V 400 800 1000 VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 500 900 1100 30 IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA Document Number: 93699 Revision: 05-Jun-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 1 180/181RKI Series Vishay High Power Products Phase Control Thyristors (Stud Version), 180 A ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average on-state current at case temperature Maximum RMS on-state current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS 180° conduction, half sine wave DC at 79 °C case temperature t = 10 ms Maximum peak, one-cycle non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2 t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing Low level value of threshold voltage High level value of threshold voltage Low level value of on-state slope resistance High level value of on-state slope resistance Maximum on-state voltage Maximum holding current Typical latching current I2√t VT(TO)1 VT(TO)2 rt1 rt2 VTM IH IL No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied VALUES 180 80 285 3800 4000 3500 Sinusoidal half wave, initial TJ = TJ maximum 3660 72 66 61 56 720 0.83 0.89 0.92 0.81 1.35 600 1000 kA2√s V mΩ V mA kA2s A UNITS A °C A t = 0.1 to 10 ms, no voltage reapplied (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum (I > π x IT(AV)), TJ = TJ maximum (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum (I > π x IT(AV)), TJ = TJ maximum Ipk = 570 A, TJ = TJ maximum, tp = 10 ms sine pulse TJ = 25 °C, anode supply 12 V resistive load SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current Typical delay time Typical turn-off time SYMBOL dI/dt td tq TEST CONDITIONS Gate drive 20 V, 20 Ω, tr ≤ 1 µs TJ = TJ maximum, anode voltage ≤ 80 % VDRM Gate current 1 A, dIg/dt = 1 A/µs Vd = 0.67 % VDRM, TJ = 25 °C ITM = 50 A, TJ = TJ maximum, dI/dt = 10 A/µs, VR = 100 V, dV/dt = 20 V/µs VALUES 300 1.0 µs 100 UNITS A/µs BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage Maximum peak reverse and off-state leakage current SYMBOL dV/dt IRRM, IDRM TEST CONDITIONS TJ = TJ maximum linear to 80 % rated VDRM TJ = TJ maximum, rated VDRM/VRRM applied VALUES 500 30 UNITS V/µs mA www.vishay.com 2 For technical questions, contact: ind-modules@vishay.com Document Number: 93699 Revision: 05-Jun-08 180/181RKI Series Phase Control Thyristors (Stud Version), 180 A TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage SYMBOL PGM PG(AV) IGM +VGM -VGM TEST CONDITIONS TJ = TJ maximum, tp ≤ 5 ms TJ = TJ maximum, f = 50 Hz, d% = 50 TJ = TJ maximum, tp ≤ 5 ms TJ = TJ maximum, tp ≤ 5 ms TJ = - 40 °C DC gate current required to trigger IGT TJ = 25 °C TJ = 125 °C TJ = - 40 °C DC gate voltage required to trigger VGT TJ = 25 °C TJ = 125 °C DC gate current not to trigger IGD TJ = TJ maximum DC gate voltage not to trigger VGD Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied 130 65 35 2.0 1.2 0.9 10 VALUES TYP. 10 2.0 3.0 20 5.0 150 2.5 mA V mA MAX. UNITS Vishay High Power Products W A V 0.25 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, case to heatsink SYMBOL TJ TStg RthJC RthCS DC operation Mounting surface, smooth, flat and greased Non-lubricated threads Mounting torque, ± 10 % Lubricated threads Approximate weight Case style See dimensions - link at the end of datasheet TEST CONDITIONS VALUES - 40 to 125 - 40 to 150 0.15 K/W 0.04 31 (275) 24.5 (210) 280 UNITS °C N·m (lbf ⋅ in) g TO-209AB (TO-93) ΔRthJC CONDUCTION CONDUCTION ANGLE 180° 120° 90° 60° 30° SINUSOIDAL CONDUCTION 0.050 0.063 0.080 0.118 0.225 RECTANGULAR CONDUCTION 0.032 0.059 0.082 0.124 0.228 TJ = TJ maximum K/W TEST CONDITIONS UNITS Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Document Number: 93699 Revision: 05-Jun-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 180/181RKI Series Vishay High Power Products Phase Control Thyristors (Stud Version), 180 A 130 120 110 Conduction Angle Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) 130 120 110 181RKI Series R thJC (DC) = 0.15 K/W 181RKI Series R thJC (DC) = 0.15 K/W Conduction Period 100 90 80 70 0 20 40 60 80 100 120 140 160 180 200 Average On-state Current (A) 30° 60° 90° 120° 180° 100 90 80 70 0 50 100 150 200 250 300 Average On-state Current (A) 30° 60° 90° 120° 180° DC Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Maximum Average On-state Power Loss (W) 240 S R th 220 200 180 160 140 180° 120° 90° 60° 30° RMS Limit /W 2K 0. 3 0. W K/ 0.6 K/ W A K/ W .1 =0 -D e lt aR 120 100 80 60 K/ W 1K /W 0 .8 Conduction Angle 1 .5 K/ W 40 20 0 181RKI Series TJ = 125°C 2 K/ W 0 20 40 60 80 100 120 140 160 180 0 25 50 75 100 125 Average On-state Current (A) Maximum Allowable Ambient Temperature (°C) Fig. 3 - On-State Power Loss Characteristics Maximum Average On-state Power Loss (W) 350 300 250 200 DC 180° 120° 90° 60° 30° A hS Rt 0. 2 K/ W = 1 0. 0. 3 W K/ K/ W -D ta el R 150 RMS Limit Conduction Period 0.6 K/ W 100 K/ W 1 K/ W 1.5 K /W 2 K/ W 0.8 50 0 0 50 100 150 181RKI Series TJ = 125°C 200 250 300 0 25 50 75 100 125 Average On-state Current (A) Maximum Allowable Ambient Temperature (°C) Fig. 4 - On-State Power Loss Characteristics www.vishay.com 4 For technical questions, contact: ind-modules@vishay.com Document Number: 93699 Revision: 05-Jun-08 180/181RKI Series Phase Control Thyristors (Stud Version), 180 A Vishay High Power Products Peak Half Sine Wave On-state Current (A) 4000 Peak Half Sine Wave On-state Current (A) 3500 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 4000 3500 3000 3000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained . Initial TJ = 125°C No Voltage Reapplied Rated VRRM Reapplied 2500 2500 2000 181RKI Series 1500 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) 2000 181RKI Series 1500 0.01 0.1 Pulse Train Duration (s) 1 Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current 10000 Instantaneous On-state Current (A) TJ = 25°C 1000 TJ = 125°C 181RKI Series 100 0.5 1 1.5 2 2.5 3 Instantaneous On-state Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics Transient Thermal Impedance Z thJC (K/W) 1 Steady State Value R thJC = 0.15 K/W (DC Operation) 0.1 0.01 181RKI Series 0.001 0.001 0.01 0.1 Square Wave Pulse Duration (s) 1 10 Fig. 8 - Thermal Impedance ZthJC Characteristics Document Number: 93699 Revision: 05-Jun-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 180/181RKI Series Vishay High Power Products Phase Control Thyristors (Stud Version), 180 A 100 Instantaneous Gate Voltage (V) Rectangular gate pulse a) Recommended load line for rated di/dt: 20V, 30ohms; tr6µs b) Recommended load line for 10
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