1N5820-M3

VS-1N5820, VS-1N5820-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 3.0 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long term reliability C-16 PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM max. TJ max. Diode variation EAS DO-201AD (C-16) 3A 20 V See Electrical table 20 mA at 100 °C 150 °C Single die See Electrical table • Compliant to RoHS Directive 2002/95/EC • Designed and qualified for commercial level • Halogen-free according to IEC 61249-2-21 definition (-M3 only) DESCRIPTION The VS-1N5820... axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) VRRM IFSM VF TJ tp = 5 μs sine 3 Apk, TJ = 25 °C Range CHARACTERISTICS Rectangular waveform VALUES 3.0 20 450 0.475 - 65 to 150 UNITS A V A V °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM VS-1N5820 20 VS-1N5820-M3 20 UNITS V ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current at TJ = 25 °C SYMBOL IF(AV) TEST CONDITIONS 50 % duty cycle at TL = 114 °C, rectangular waveform With cooling fins 5 µs sine or 3 µs rect. pulse IFSM 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied VALUES 3.0 450 90 A UNITS Revision: 11-Oct-11 Document Number: 93257 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-1N5820, VS-1N5820-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER Maximum forward voltage drop SYMBOL VFM (1) IRM (1) CT LS dV/dt 3A 9.4 A TJ = 25 °C TJ = 100 °C TEST CONDITIONS TJ = 25 °C VR = Rated VR TYP. 0.41 0.49 0.05 8.1 350 9.0 MAX. 0.475 0.85 2.0 20 10 000 UNITS V Maximum reverse leakage current Typical junction capacitance Typical series inductance Maximum voltage rate of change Note (1) Pulse width < 300 μs, duty cycle < 2 % mA pF nH V/µs VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C Measured lead to lead 5 mm from package body Rated VR THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to lead Maximum thermal resistance, junction to ambient Approximate weight Marking device Note (1) SYMBOL TJ (1), TEST CONDITIONS VALUES - 65 to 150 UNITS °C TStg With fin 20 x 20 (0.79 x 0.79) 1.0 thick DC operation Without cooling fin RthJL RthJA 34 °C/W 80 1.2 0.042 g oz. 1N5820 Case style C-16 dP tot 1 ------------ < ------------- thermal runaway condition for a diode on its own heatsink dT J R thJA Revision: 11-Oct-11 Document Number: 93257 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-1N5820, VS-1N5820-M3 www.vishay.com Vishay Semiconductors Allowable Lead Temperature (°C) 150 140 130 DC 120 110 100 see note (1) 90 0 93257_04 IF - Instantaneous Forward Current (A) 100 10 1 TJ = 150 °C TJ = 125 °C TJ = 25 °C 0.1 0 0.2 0.4 0.6 0.8 1 Square wave (D = 0.5) 0.5 1 1.5 2 2.5 3 3.5 4 4.5 93257_01 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics IF(AV) - Average Forward Current (A) Fig. 4 - Typical Average Forward Current vs. Allowable Lead Temperature 100 TJ = 150 °C 1.4 1.2 1 0.8 RMS Limit 0.6 0.4 0.2 0 0 5 10 15 20 93257_05 IR - Reverse Current (mA) 10 TJ = 125 °C TJ = 100 °C 1 TJ = 75 °C 0.1 TJ = 50 °C TJ = 25 °C Average Power Loss (W) D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 DC 0.01 0.001 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 93257_02 VR - Reverse Voltage (V) Fig. 2 - Typical Peak Reverse Current vs. Reverse Voltage Average Forward Current - IF(AV) (A) Fig. 5 - Maximum Average Forward Dissipation vs. Average Forward Current 1000 IFSM - Non-Repetitive Surge Current (A) 1000 TJ = 25 °C CT - Junction Capacitance (pF) TJ = 25 °C 100 At Any Rated Load Condition And With rated VRRM Applied Following Surge 100 0 93257_03 10 10 100 1000 10 000 5 10 15 20 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 93257_06 tp - Square Wave Pulse Duration (µs) Fig. 6 - Maximum Peak Surge Forward Current vs. Pulse Duration Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D) Revision: 11-Oct-11 Document Number: 93257 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-1N5820, VS-1N5820-M3 www.vishay.com ORDERING INFORMATION TABLE Vishay Semiconductors Device code VS1 1 2 3 4 - 1N5820 2 TR 3 -M3 4 Vishay Semiconductors product Part number: 3 A, 20 V TR = Tape and reel package None = Bulk package - Environmental digit None = Lead (Pb)-free and RoHS compliant -M3 = Halogen-free, RoHS compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-1N5820 VS-1N5820TR VS-1N5820-M3 VS-1N5820TR-M3 QUANTITY PER T/R 500 1200 500 1200 MINIMUM ORDER QUANTITY 500 1200 500 1200 PACKAGING DESCRIPTION Bulk Tape and reel Bulk Tape and reel LINKS TO RELATED DOCUMENTS Dimensions Part marking information Packaging information www.vishay.com/doc?95242 www.vishay.com/doc?95304 www.vishay.com/doc?95338 Revision: 11-Oct-11 Document Number: 93257 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors Axial DO-204AL (DO-41) DIMENSIONS in millimeters (inches) 2.70 (0.106) DIA. 2.29 (0.090) Cathode band 27.0 (1.06) MIN. (2 places) 27.0 (1.06) MIN. (2 places) 5.21 (0.205) MAX. 5.21 (0.205) MAX. 1.27 (0.050) MAX. Flash (2 places) 0.86 (0.034) DIA. 0.72 (0.028) (2 places) 0.86 (0.034) DIA. 0.72 (0.028) (2 places) 2.70 (0.106) DIA. 2.29 (0.090) Revision: 29-Aug-11 Document Number: 95241 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000