2N3819

2N3819 Vishay Siliconix N-Channel JFET PRODUCT SUMMARY VGS(off) (V) v –8 V(BR)GSS Min (V) –25 gfs Min (mS) 2 IDSS Min (mA) 2 FEATURES D Excellent High-Frequency Gain: Gps 11 dB @ 400 MHz D Very Low Noise: 3 dB @ 400 MHz D Very Low Distortion D High ac/dc Switch Off-Isolation D High Gain: AV = 60 @ 100 mA BENEFITS D D D D D Wideband High Gain Very High System Sensitivity High Quality of Amplification High-Speed Switching Capability High Low-Level Signal Amplification APPLICATIONS D D D D High-Frequency Amplifier/Mixer Oscillator Sample-and-Hold Very Low Capacitance Switches DESCRIPTION The 2N3819 is a low-cost, all-purpose JFET which offers good performance at mid-to-high frequencies. It features low noise and leakage and guarantees high gain at 100 MHz. Its TO-226AA (TO-92) package is compatible with various tape-and-reel options for automated assembly (see Packaging Information). For similar products in TO-206AF (TO-72) and TO-236 (SOT-23) packages, see the 2N4416/2N4416A/SST4416 data sheet. TO-226AA (TO-92) S 1 G 2 D 3 Top View ABSOLUTE MAXIMUM RATINGS Gate-Source/Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 V Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C Document Number: 70238 S–04028—Rev. D ,04-Jun-01 Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW Notes a. Derate 2.8 mW/_C above 25_C www.vishay.com 7-1 2N3819 Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Currentc Drain Cutoff Current Drain-Source On-Resistance Gate-Source Voltage Gate-Source Forward Voltage V(BR)GSS VGS(off) IDSS IGSS IG ID(off) rDS(on) VGS VGS(F) IG = –1 mA , VDS = 0 V VDS = 15 V, ID = 2 nA VDS = 15 V, VGS = 0 V VGS = –15 V, VDS = 0 V TA = 100_C VDG = 10 V, ID = 1 mA VDS = 10 V, VGS = –8 V VGS = 0 V, ID = 1 mA VDS = 15 V, ID = 200 mA IG = 1 mA , VDS = 0 V –0.5 2 –25 –35 –3 10 –0.002 –0.002 –20 2 150 –2.5 0.7 –7.5 V pA W V –8 20 –2 –2 mA nA mA Symbol Test Conditions Min Typa Max Unit Dynamic Common-Source Forward Transconductancec Common-Source Output Conductancec Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltagec f = 1 kHz gfs gos Ciss Crss en VDS = 15 V VGS = 0 V f = 100 MHz f = 1 kHz VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 0 V, f = 100 Hz 2 1.6 5.5 5.5 25 2.2 0.7 6 50 8 4 pF nV⁄ √Hz NH 6.5 mS mS Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms, duty cycle v2%. c. This parameter not registered with JEDEC. TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage 20 10 rDS(on) – Drain-Source On-Resistance ( Ω ) gfs – Forward Transconductance (mS) 500 rDS @ ID = 1 mA, VGS = 0 V gos @ VDS = 10 V, VGS = 0 V f = 1 kHz On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage 100 IDSS – Saturation Drain Current (mA) 16 IDSS 8 400 80 gos – Output Conductance (mS) 12 gfs 6 300 rDS gos 60 8 4 200 40 4 IDSS @ VDS = 15 V, VGS = 0 V gfs @ VDS = 15 V, VGS = 0 V f = 1 kHz 2 100 20 0 0 –2 –4 –6 –8 –10 0 VGS(off) – Gate-Source Cutoff Voltage (V) 0 0 –2 –4 –6 –8 –10 VGS(off) – Gate-Source Cutoff Voltage (V) 0 www.vishay.com 7-2 Document Number: 70238 S–04028—Rev. D ,04-Jun-01 2N3819 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) 100 nA Gate Leakage Current 10 5 mA Common-Source Forward Transconductance vs. Drain Current VGS(off) = –3 V VDS = 10 V f = 1 kHz 10 nA TA = 125_C gfs – Forward Transconductance (mS) 1 mA 0.1 mA 8 TA = –55_C 6 25_C 4 125_C 2 IG – Gate Leakage 1 nA 100 pA 5 mA 10 pA TA = 25_C 1 mA 0.1 mA IGSS @ 125_C 1 pA IGSS @ 25_C 0.1 pA 0 10 VDG – Drain-Gate Voltage (V) 20 0 0.1 1 ID – Drain Current (mA) 10 Output Characteristics 10 VGS(off) = –2 V 8 ID – Drain Current (mA) ID – Drain Current (mA) VGS = 0 V 6 –0.2 V –0.4 V 4 –0.6 V –0.8 V 2 –1.0 V –1.2 V –1.4 V 0 2 4 6 8 10 12 15 Output Characteristics VGS(off) = –3 V VGS = 0 V 9 –0.3 V –0.6 V 6 –0.9 V –1.2 V 3 –1.5 V –1.8 V 0 0 0 2 4 6 8 10 VDS – Drain-Source Voltage (V) VDS – Drain-Source Voltage (V) Transfer Characteristics 10 VGS(off) = –2 V 8 ID – Drain Current (mA) ID – Drain Current (mA) TA = –55_C 6 25_C VDS = 10 V 8 10 Transfer Characteristics VGS(off) = –3 V VDS = 10 V TA = –55_C 6 125_C 4 25_C 4 125_C 2 2 0 0 –0.4 –0.8 –1.2 –1.6 –2 VGS – Gate-Source Voltage (V) 0 0 –0.6 –1.2 –1.8 –2.4 –3 VGS – Gate-Source Voltage (V) Document Number: 70238 S–04028—Rev. D ,04-Jun-01 www.vishay.com 7-3 2N3819 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Transconductance vs. Gate-Source Voltage 10 VGS(off) = –2 V gfs – Forward Transconductance (mS) 8 TA = –55_C 6 25_C VDS = 10 V f = 1 kHz gfs – Forward Transconductance (mS) 8 TA = –55_C 6 25_C 10 VGS(off) = –3 V VDS = 10 V f = 1 kHz Transconductance vs. Gate-Source Voltgage 4 125_C 4 125_C 2 2 0 0 –0.4 –0.8 –1.2 –1.6 –2 VGS – Gate-Source Voltage (V) 0 0 –0.6 –1.2 –1.8 –2.4 –3 VGS – Gate-Source Voltage (V) On-Resistance vs. Drain Current 300 rDS(on) – Drain-Source On-Resistance ( Ω ) TA = –55_C 240 AV – Voltage Gain VGS(off) = –2 V 180 –3 V 120 80 100 Circuit Voltage Gain vs. Drain Current g fs R L AV + 1 ) R g L os Assume VDD = 15 V, VDS = 5 V RL + 10 V ID 60 VGS(off) = –2 V 40 60 20 –3 V 0 0.1 1 ID – Drain Current (mA) 10 0 0.1 1 ID – Drain Current (mA) 10 Common-Source Input Capacitance vs. Gate-Source Voltage 5 Crss – Reverse Feedback Capacitance (pF) f = 1 MHz 4 Ciss – Input Capacitance (pF) 3.0 Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage f = 1 MHz 2.4 3 VDS = 0 V 1.8 2 1.2 VDS = 0 V 1 VDS = 10 V 0.6 VDS = 10 V 0 0 –4 –8 –12 –16 –20 VGS – Gate-Source Voltage (V) 0 0 –4 –8 –12 –16 –20 VGS – Gate-Source Voltage (V) www.vishay.com 7-4 Document Number: 70238 S–04028—Rev. D ,04-Jun-01 2N3819 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Input Admittance 100 TA = 25_C VDS = 15 V VGS = 0 V Common Source 100 Forward Admittance TA = 25_C VDS = 15 V VGS = 0 V Common Source bis 10 gis 10 (mS) (mS) gfs –bis 1 1 0.1 100 200 500 1000 0.1 100 200 500 1000 f – Frequency (MHz) f – Frequency (MHz) Reverse Admittance 10 TA = 25_C VDS = 15 V VGS = 0 V Common Source 10 Output Admittance TA = 25_C VDS = 15 V VGS = 0 V Common Source –brs bos 1 (mS) (mS) 1 gos –grs 0.1 0.1 0.01 100 200 500 1000 0.01 100 200 500 1000 f – Frequency (MHz) f – Frequency (MHz) Equivalent Input Noise Voltage vs. Frequency 20 VGS(off) = –3 V Hz 16 VDS = 10 V gos – Output Conductance (mS) 16 20 Output Conductance vs. Drain Current VGS(off) = –3 V VDS = 10 V f = 1 kHz en – Noise Voltage nV / TA = –55_C 12 25_C 8 125_C 4 12 8 ID = 5 mA 4 ID = IDSS 0 10 100 1k f – Frequency (Hz) 10 k 100 k 0 0.1 1 ID – Drain Current (mA) 10 Document Number: 70238 S–04028—Rev. D ,04-Jun-01 www.vishay.com 7-5