2N4856A

2N4856A/4857A/4858A Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number 2N4856A 2N4857A 2N4858A VGS(off) (V) –4 to –10 –2 to –6 –0.8 to –4 V(BR)GSS Min (V) –40 –40 –40 IDSS Min (mA) 50 20 8 rDS(on) Max (W ) 25 40 60 ID(off) Typ (pA) 5 5 5 tON Typ (ns) 4 4 4 FEATURES D Low On-Resistance: 2N4856A 25_C SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits 2N4856A 2N4857A 2N4858A Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Currentc Symbol Test Conditions Typa Min Max Min Max Min Max Unit V(BR)GSS VGS(off) IDSS IGSS IG ID(off) IG = –1 mA , VDS = 0 V VDS = 15 V, ID = 0.5 nA VDS = 15 V, VGS = 0 V VGS = –20 V, VDS = 0 V TA = 150_C VDG = 15 V, ID = 10 mA VDS = 15 V, VGS = –10 V –55 –40 –4 50 –10 –40 –2 20 –250 –500 –6 100 –250 –500 –40 V –0.8 8 –4 80 –250 –500 mA pA nA pA nA –5 –13 –5 5 13 0.25 0.35 0.5 250 500 250 500 250 500 0.5 Drain Cutoff Current TA = 150_C ID = 5 mA Drain-Source On-Voltage VDS(on) VGS = 0 V ID = 10 mA ID = 20 mA 0.5 0.75 25 40 60 V Drain-Source On-Resistancec Gate-Source Forward Voltagec rDS(on) VGS(F) VGS = 0 V, ID = 1 mA IG = 1 mA , VDS = 0 V 0.7 W V Dynamic Common-Source Forward Transconductancec Common-Source Output Conductancec Drain-Source On-Resistance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltagec gfs gos rds(on) Ciss Crss en VDS = 0 V, VGS = –10 V f = 1 MHz VDS = 20 V, ID = 1 mA f = 1 kHz 6 25 25 7 3 3 10 4 40 10 3.5 60 10 pF 3.5 nV⁄ √Hz mS mS W VGS = 0 V, ID = 0 mA f = 1 kHz VDS = 10 V, ID = 10 mA f = 1 kHz Switching td(on) Turn-On Time Turn-Off Time tr tOFF VDD = 10 V, VGSH = 0 V See Switching Circuit 2 2 12 5 3 20 6 4 40 8 8 80 NCB ns Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v100 ms duty cycle v10%. c. This parameter not registered with JEDEC. www.vishay.com 7-2 Document Number: 70243 S-04028—Rev. D, 04-Jun-01 2N4856A/4857A/4858A Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage rDS @ ID = 1 mA, VGS = 0 IDSS @ VDS = 20 V, VGS = 0 80 IDSS 120 160 100 rDS(on) – Drain-Source On-Resistance ( Ω ) 200 rDS(on) – Drain-Source On-Resistance ( Ω ) IDSS – Saturation Drain Current (mA) 100 On-Resistance vs. Drain Current TA = 25_C 80 VGS(off) = –2 V 60 60 rDS 40 80 40 –4 V –8 V 20 40 20 0 0 –4 –6 –8 VGS(off) – Gate-Source Cutoff Voltage (V) –2 –10 0 0 1 10 ID – Drain Current (mA) 100 On-Resistance vs. Temperature 200 rDS(on) – Drain-Source On-Resistance ( Ω ) ID = 1 mA rDS changes X 0.7%/_C 160 Switching Time (ns) 4 5 Turn-On Switching tr approximately independent of ID VDG = 5 V, RG = 50 W VGS(L) = –10 V tr td(on) @ ID = 12 mA 2 120 3 80 VGS(off) = –2 V –4 V 40 –8 V 0 –55 –35 –15 5 25 45 65 85 105 125 TA – Temperature (_C) 1 td(on) @ ID = 3 mA 0 0 –2 –4 –6 –8 –10 VGS(off) – Gate-Source Cutoff Voltage (V) Turn-Off Switching 30 td(off) independent of device VGS(off) VDG = 5 V, VGS(L) = –10 V 24 Switching Time (ns) Capacitance (pF) 24 30 Capacitance vs. Gate-Source Voltage f = 1 MHz 18 tf 12 td(off) 6 VGS(off) = –8 V 0 0 2 4 VGS(off) = –2 V 18 12 Ciss @ VDS = 0 V 6 Crss @ VDS = 0 V 0 6 8 10 0 –4 –8 –12 –16 –20 ID – Drain Current (mA) Document Number: 70243 S-04028—Rev. D, 04-Jun-01 VGS – Gate-Source Voltage (V) www.vishay.com 7-3 2N4856A/4857A/4858A Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Noise Voltage vs. Frequency 100 VDG = 10 V gfs – Forward Transconductance (mS) 40 Hz Forward Transconductance and Output Conductance vs. Gate-Source Cutoff Voltage 50 gfs and gos @ VDS = 20 V VGS = 0 V, f = kHz 500 gos – Output Conductance (µS) 400 gos 300 en – Noise Voltage nV / 30 gfs 10 ID = 1 mA 20 200 ID = 10 mA 10 100 1 10 100 1k f – Frequency (Hz) 10 k 100 k 0 0 –4 –6 –8 VGS(off) – Gate-Source Cutoff Voltage (V) –2 –10 0 10 nA Gate Leakage Current IGSS @ 25_C TA = 125_C ID = 10 mA 100 Common-Gate Input Admittance VDG = 10 V ID = 10 mA TA = 25_C 1 nA IG – Gate Leakage gig 100 pA 1 mA (mS) 1 mA 10 big 10 pA TA = 25_C 1 pA 10 mA IGSS @ 25_C 1 IG(on) @ ID 0.1 pA 0 6 12 18 24 30 0.1 100 200 500 1000 VDG – Drain-Gate Voltage (V) f – Frequency (MHz) Common-Gate Forward Admittance 100 VDG = 10 V ID = 10 mA TA = 25_C –gfg 10 (mS) (mS) gfg bfg 1 10 Common-Gate Reverse Admittance VDG = 10 V ID = 10 mA TA = 25_C –brg +grg –grg 0.1 1 0.1 100 200 500 f – Frequency (MHz) 1000 0.01 100 200 500 f – Frequency (MHz) 1000 www.vishay.com 7-4 Document Number: 70243 S-04028—Rev. D, 04-Jun-01 2N4856A/4857A/4858A Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Common-Gate Output Admittance 100 VDG = 10 V ID = 10 mA TA = 25_C ID – Drain Current (mA) bog 10 (mS) 20 VGS(off) = –2 V 16 Output Characteristics 12 VGS = 0 V –0.2 V –0.4 V gog 1 8 –0.6 V –0.8 V 4 –1.0 V –1.2 V 0.1 100 200 500 1000 0 0 0.2 0.4 0.6 0.8 1.0 f – Frequency (MHz) VDS – Drain-Source Voltage (V) Output Characteristics 40 VGS(off) = –4 V 32 ID – Drain Current (mA) ID – Drain Current (mA) 40 50 Output Characteristics VGS(off) = –8 V –1 V VGS = 0 V 30 –2 V –3 V 20 –4 V –5 V –6 V –3.0 V 0 0 0.2 0.4 0.6 0.8 1.0 0 0 0.2 0.4 0.6 0.8 1.0 24 VGS = 0 V –0.5 V –1.0 V 16 –1.5 V –2.0 V 8 –2.5 V 10 VDS – Drain-Source Voltage (V) VDS – Drain-Source Voltage (V) VDD SWITCHING TIME TEST CIRCUIT 2N4856A VGS(L) RL* ID(on) *Non-inductive –10 V 464 W 20 mA RL OUT VGS(H) VGS(L) 1 κΩ 51 Ω 2N4857A –6 V 953 W 10 mA 2N4858A –4 V 1910 W 5 mA INPUT PULSE Rise Time < 1 ns Fall Time < 1 ns Pulse Width 100 ns PRF 1 MHz Document Number: 70243 S-04028—Rev. D, 04-Jun-01 SAMPLING SCOPE Rise Time 0.4 ns Input Resistance 10 MW Input Capacitance 1.5 pF VIN Scope 51 Ω www.vishay.com 7-5