40TTS12PBF

40TTS12PbF High Voltage Series Vishay High Power Products Phase Control SCR, 40 A DESCRIPTION/FEATURES 2 (A) TO-220AB 1 (K) (G) 3 The 40TTS12PbF High Voltage Series of silicon Available controlled rectifiers are specifically designed for RoHS* medium power switching and phase control COMPLIANT applications. The glass passivation technology used has reliable operation up to 140 °C junction temperature. Low Igt parts available. Typical applications are in input rectification (soft start) and these products are designed to be used with Vishay HPP input diodes, switches and output rectifiers which are available in identical package outlines. This product has been designed and qualified for industrial level and lead (Pb)-free (“PbF” suffix). PRODUCT SUMMARY VT at 80 A ITSM VRRM < 1.6 V 350 A 1200 V MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) IRMS VRRM/VDRM ITSM VT dV/dt dI/dt TJ TJ = 25 °C TEST CONDITIONS Sinusoidal waveform VALUES 25 A 40 1200 350 1.6 500 150 - 40 to 140 V A V V/µs A/µs °C UNITS VOLTAGE RATINGS PART NUMBER 40TTS12PbF VRRM, MAXIMUM PEAK REVERSE VOLTAGE V 1200 VDRM, MAXIMUM PEAK DIRECT VOLTAGE V 1200 TJ °C - 25 to 140 * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 94390 Revision: 24-Apr-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 1 40TTS12PbF High Voltage Series Vishay High Power Products Phase Control SCR, 40 A ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average on-state current Maximum RMS on-state current Maximum peak, one-cycle non-repetitive surge current Maximum I2t for fusing Maximum I2√t for fusing Maximum on-state voltage Low level value of on-state slope resistance Low level value of threshold voltage Maximum reverse and direct leakage current Holding current Maximum latching current Maximum rate of rise of off-state voltage Maximum rate of rise of turned-on current SYMBOL IT(AV) IRMS ITSM I2 t I2√t VTM rt VT(TO) IRRM/IDRM IH IL dV/dt dI/dt 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied t = 0.1 to 10 ms, no voltage reapplied 80 A, TJ = 25 °C TJ = 140 °C TJ = 25 °C TJ = 140 °C VR = Rated VRRM/VDRM TEST CONDITIONS TC = 93 °C, 180° conduction half sine wave VALUES 25 40 300 350 450 630 6300 1.6 11.4 0.96 0.5 10 100 200 500 150 V/µs A/µs mA A2 s A2√s V mΩ V A UNITS Anode supply = 6 V, resistive load, initial IT = 1 A Anode supply = 6 V, resistive load TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak negative gate voltage Maximum required DC gate current to trigger Maximum required DC gate voltage to trigger Maximum DC gate voltage not to trigger Maximum DC gate current not to trigger SYMBOL PGM PG(AV) + IGM - VGM IGT VGT VGD IGD Anode supply = 6 V, resistive load, TJ = 25 °C Anode supply = 6 V, resistive load, TJ = 25 °C TJ = 140 °C, VDRM = Rated value TEST CONDITIONS VALUES 8.0 2.0 1.5 10 35 1.3 0.2 1.5 mA UNITS W A V mA V SWITCHING PARAMETER Typical turn-on time Typical reverse recovery time Typical turn-off time SYMBOL tgt trr tq TJ = 25 °C TJ = 140 °C TEST CONDITIONS VALUES 0.9 4 110 µs UNITS www.vishay.com 2 For technical questions, contact: diodes-tech@vishay.com Document Number: 94390 Revision: 24-Apr-08 40TTS12PbF High Voltage Series Phase Control SCR, 40 A Vishay High Power Products THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, junction to ambient Typical thermal resistance, case to heatsink Approximate weight minimum maximum Case style TO-220AB SYMBOL TJ, TStg RthJC RthJA RthCS Mounting surface, smooth and greased DC operation TEST CONDITIONS VALUES - 40 to 140 0.8 60 0.5 2 0.07 6 (5) 12 (10) g oz. kgf · cm (lbf · in) °C/W UNITS °C Mounting torque Marking device 40TTS12 Document Number: 94390 Revision: 24-Apr-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 3 40TTS12PbF High Voltage Series Vishay High Power Products Phase Control SCR, 40 A Maximum Allowable Case Temperature (°C Maximum Average On-state Power Loss (W) 140 RthJC (DC) = 0.8 ˚C/W 70 60 50 40 130 120 110 100 90 80 70 0 5 10 15 20 25 30 Average On-state Current (A) Conduction Angle DC 180˚ 120˚ 90˚ 60˚ 30˚ 30˚ 60˚ 90˚ 120˚ 180˚ 30 RMS Limit 20 10 Tj = 125˚C Conduction Period 0 0 10 20 30 40 Average On-state Current (A) Fig. 1 - Current Rating Characteristics Fig. 4 - On-State Power Loss Characteristics Maximum Allowable Case Temperature (°C) 140 RthJC (DC) = 0.8 ˚C/W Peak Half Sine Wave On-state Current (A) 280 260 240 220 200 180 160 140 120 1 130 120 Conduction Period At Any Rated Load Condition And With Rated Vrrm Applied Following Surge. Initial Tj = 125˚C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 110 100 90 80 70 0 5 Average On-state Current (A) 30˚ 60˚ 90˚ 120˚ 180˚ DC 10 15 20 25 30 35 40 45 10 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 2 - Current Rating Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current Maximum Average On-state Power Loss (W) Peak Half Sine Wave On-state Current (A) 60 50 40 30 20 10 0 0 5 10 15 20 25 30 Average On-state Current (A) 400 180˚ 120˚ 90˚ 60˚ 30˚ RMS Limit Conduction Angle Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control 350 Of Conduction May Not Be Maintained. Initial Tj = 125˚C No Voltage Reapplied 300 Rated Vrrm Reapplied 250 200 150 100 0.01 Tj = 125˚C 0.1 1 10 Pulse Train Duration (s) Fig. 3 - On-State Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current www.vishay.com 4 For technical questions, contact: diodes-tech@vishay.com Document Number: 94390 Revision: 24-Apr-08 40TTS12PbF High Voltage Series Phase Control SCR, 40 A Vishay High Power Products 1000 Instantaneous On-state Current (A) Tj = 25˚C Tj = 125˚C 100 10 1 0 1 2 3 4 5 Instantaneous On-state Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics 100 Instantaneous Gate Voltage (V) 10 Rectangular gate pulse a)Recommended load line for rated di/dt: 10 V, 20 ohms tr = 0.5 µs, tp >= 6 µs b)Recommended load line for = 6 µs (1) PGM = 40 W, tp = 1 ms (2) PGM = 20 W, tp = 2 ms (3) PGM = 8 W, tp = 5 ms (4) PGM = 4 W, tp = 10 ms (a) (b) T = -10 ˚C J 1 VGD T = 25 ˚C J T = 140 ˚C J (4) (3) (2) (1) IGD Frequency Limited by PG(AV) 0.1 0.001 0.01 0.1 1 Instantaneous Gate Current (A) 10 100 Fig. 8 - Gate Characteristics Transient Thermal Impedance ZthJC (°C/W) 1 Steady State Value (DC Operation) 0.1 Single Pulse 0.01 0.0001 0.001 0.01 0.1 Square Wave Pulse Duration (s) 1 10 Fig. 9 - Thermal Impedance ZthJC Characteristics Document Number: 94390 Revision: 24-Apr-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 5 40TTS12PbF High Voltage Series Vishay High Power Products Phase Control SCR, 40 A ORDERING INFORMATION TABLE Device code 40 1 1 2 3 4 5 6 T 2 - T 3 S 4 12 5 PbF 6 Current rating, RMS value Circuit configuration: T = Single thyristor Package: T = TO-220 Type of silicon: S = Standard recovery rectifier Voltage rating (12 = 1200 V) None = Standard production PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions Part marking information http://www.vishay.com/doc?95222 http://www.vishay.com/doc?95225 www.vishay.com 6 For technical questions, contact: diodes-tech@vishay.com Document Number: 94390 Revision: 24-Apr-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1