6CUT10-E

VS-6CUT10-E, VS-6CWT10FN-E Vishay Semiconductors High Performance Schottky Generation 5.0, 2 x 3 A FEATURES • 175 °C high performance Schottky diode • Very low forward voltage drop I-PAK (TO-251AA) Base common cathode 4 D-PAK (TO-252AA) Base common cathode 4 • Extremely low reverse leakage • Optimized VF vs. IR trade off for high efficiency • Increased ruggedness for reverse avalanche capability • RBSOA available • Negligible switching losses 1 Anode 2 Common cathode 3 Anode 2 Common 1 cathode 3 Anode Anode • Submicron trench technology • Compliant to RoHS Directive 2002/95/EC APPLICATIONS VS-6CWT10FN-E VS-6CUT10-E • Specific for PV cells bypass diode • High efficiency SMPS PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM max. TJ max. Diode variation EAS D-PAK (TO-252AA), I-PAK (TO-251AA) 2x3A 100 V 0.63 V 1 mA at 125 °C 175 °C Common cathode 12 mJ • High frequency switching • Output rectification • Reverse battery protection • Freewheeling • DC/DC systems • Increased power density systems MAJOR RATINGS AND CHARACTERISTICS SYMBOL VRRM VF TJ 3 Apk, TJ = 125 °C (typical, per leg) Range CHARACTERISTICS VALUES 100 0.6 - 55 to 175 UNITS V °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage SYMBOL VR TEST CONDITIONS TJ = 25 °C VS-6CUT10-E VS-6CWT10FN-E 100 UNITS V Document Number: 94662 Revision: 05-Jan-11 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 VS-6CUT10-E, VS-6CWT10FN-E Vishay Semiconductors High Performance Schottky Generation 5.0, 2 x 3 A ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current per leg per device SYMBOL IF(AV) TEST CONDITIONS 50 % duty cycle at TC = 166 °C, rectangular waveform 5 μs sine or 3 μs rect. pulse IFSM 10 ms sine or 6 ms rect. pulse EAS IAR TJ = 25 °C, IAS = 4 A, L = 1.5 mH Limited by frequency of operation and time pulse duration so that TJ < TJ max. IAS at TJ max. as a function of time pulse. See fig. 8 Following any rated load condition and with rated VRRM applied VALUES 3 6 440 70 12 IAS at TJ max. mJ A A UNITS Maximum peak one cycle non-repetitive surge current per leg Non-repetitive avalanche energy per leg Repetitive avalanche current per leg ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL 3A Forward voltage drop per leg VFM (1) 6A 3A 6A Reverse leakage current per leg Junction capacitance per leg Series inductance per leg Maximum voltage rate of change Note (1) Pulse width < 300 μs, duty cycle < 2 % IRM (1) CT LS dV/dt TJ = 25 °C TJ = 125 °C TEST CONDITIONS TJ = 25 °C TJ = 125 °C VR = Rated VR TYP. 0.720 0.825 0.60 0.69 0.3 0.3 114 8.0 MAX. 0.79 0.91 0.63 0.74 30 1 10 000 μA mA pF nH V/μs V UNITS VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C Measured lead to lead 5 mm from package body Rated VR THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case per leg Maximum thermal resistance, junction to case per device Typical thermal resistance, case to heatsink Approximate weight Case style I-PAK Case style D-PAK SYMBOL TJ, TStg TEST CONDITIONS VALUES - 55 to 175 4.7 RthJC DC operation 2.35 RthCS 0.3 0.3 0.01 6CUT10 6CWT10FN g oz. °C/W UNITS °C Marking device www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94662 Revision: 05-Jan-11 VS-6CUT10-E, VS-6CWT10FN-E High Performance Schottky Generation 5.0, 2 x 3 A 100 10 175 °C Vishay Semiconductors IF - Instantaneous Forward Current (A) IR - Reverse Current (mA) 1 150 °C 125 °C 10 TJ = 175 °C 0.1 100 °C 75 °C 0.01 50 °C 0.001 25 °C 1 TJ = 125 °C TJ = 25 °C 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.0001 0 5 10 15 20 25 30 35 40 45 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 1000 CT - Junction Capacitance (pF) 100 10 0 5 10 15 20 25 30 35 40 45 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 Thermal Impedance ZthJC (°C/W) 1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 Single pulse (Thermal resistance) 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 94662 Revision: 05-Jan-11 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 VS-6CUT10-E, VS-6CWT10FN-E Vishay Semiconductors 180 High Performance Schottky Generation 5.0, 2 x 3 A 2.5 270° 180° 120° 90° 72° Allowable Case Temperature (°C) Average Power Loss (W) 175 170 165 160 155 150 145 0 1 2 3 3 5 Square wave (D = 0.50) 80 % rated VR applied See note (1) 2 DC DC 1.5 1 RMS limit 0.5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current 1000 IF(AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics IFSM - Non-Repetitive Surge Current (A) 100 10 10 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR www.vishay.com 4 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94662 Revision: 05-Jan-11 VS-6CUT10-E, VS-6CWT10FN-E High Performance Schottky Generation 5.0, 2 x 3 A 100 Vishay Semiconductors Avalanche Current (A) 10 TJ = 25 °C 1 TJ = 125 °C TJ = 175 °C 0.1 1 10 100 Rectangular Pulse Duration (µs) Fig. 8 - Reverse Bias Safe Operating Area (Avalanche Current vs. Rectangular Pulse Duration) 100 Avalanche Energy (mJ) TJ = 25 °C 10 TJ = 125 °C TJ = 175 °C 1 1 10 100 Rectangular Pulse Duration (µs) Fig. 9 - Reverse Bias Safe Operating Area (Avalanche Energy vs. Rectangular Pulse Duration) Document Number: 94662 Revision: 05-Jan-11 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 5 VS-6CUT10-E, VS-6CWT10FN-E Vishay Semiconductors ORDERING INFORMATION TABLE High Performance Schottky Generation 5.0, 2 x 3 A Device code VS1 - 6 2 C 3 U 4 T 5 10 6 FN 7 TRL 8 -E 9 1 2 3 4 Vishay Semiconductors product Current rating (2 x 3 A) Circuit configuration: C = Common cathode - Package: U = I-PAK W = D-PAK 5 6 7 8 - T = Trench Voltage rating (10 = 100 V) TO-252AA (D-PAK) D-PAK, I-PAK: None = Tube (75 pieces) D-PAK only: TR = Tape and reel TRL = Tape and reel (left oriented) TRR = Tape and reel (right oriented) 9 - Environmental digit: -E = RoHS compliant and terminations lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions Part marking information www.vishay.com/doc?95024 www.vishay.com/doc?95097 www.vishay.com 6 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94662 Revision: 05-Jan-11 Outline Dimensions Vishay Semiconductors I-PAK - S, D-PAK DIMENSIONS FOR I-PAK - S in millimeters E A c2 b3 E1 4 D 3 2 1 L4 L5 L H b2 e e c b b3 SYMBOL E L L4 L5 D H b b2 b3 b4 e A c c2 D1 E1 DIMENSIONAL REQUIREMENTS MIN. 6.40 3.98 0.66 1.96 6.00 11.05 0.64 0.77 5.21 0.41 2.20 0.40 0.40 5.30 4.40 NOM. 6.60 4.13 0.76 2.16 6.10 11.25 0.76 0.84 5.34 0.51 2.286 BSC 2.30 0.50 0.50 2.38 0.60 0.60 MAX. 6.70 4.28 0.86 2.36 6.20 11.45 0.88 1.14 5.46 0.61 Document Number: 95024 Revision: 05-Jan-11 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com D1 www.vishay.com 1 Outline Dimensions Vishay Semiconductors I-PAK - S, D-PAK DIMENSIONS FOR D-PAK in millimeters and inches (5) E b3 Ø2 (3) A 0.010 M C A B L3 (3) 4 B D (5) 1 2 3 L4 Ø1 Seating plane H D1 0.488 (12.40) 0.409 (10.40) A C c2 A Pad layout 0.265 MIN. (6.74) E1 4 0.245 MIN. (6.23) 3 2 1 (2) L5 b b2 2x e Detail “C” c 0.010 M C A B Detail “C” Rotated 90 °CW Scale: 20:1 Lead tip Gauge plane L2 Ø C C L 0.089 MIN. (2.28) A 0.06 MIN. (1.524) 0.093 (2.38) 0.085 (2.18) (L1) H (7) C Seating plane A1 SYMBOL A A1 b b2 b3 c c2 D D1 E E1 Notes (1) (2) (3) (4) (5) MILLIMETERS MIN. 2.18 0.64 0.76 4.95 0.46 0.46 5.97 5.21 6.35 4.32 MAX. 2.39 0.13 0.89 1.14 5.46 0.61 0.89 6.22 6.73 - INCHES MIN. 0.086 0.025 0.030 0.195 0.018 0.018 0.235 0.205 0.250 0.170 MAX. 0.094 0.005 0.035 0.045 0.215 0.024 0.035 0.245 0.265 - NOTES SYMBOL e H L L1 MILLIMETERS MIN. 9.40 1.40 MAX. 10.41 1.78 2.29 BSC INCHES MIN. 0.370 0.055 MAX. 0.410 0.070 0.090 BSC NOTES 2.74 BSC 0.51 BSC 0.89 1.14 0° 0° 25° 1.27 1.02 1.52 10° 15° 35° 0.108 REF. 0.020 BSC 0.035 0.045 0° 0° 25° 0.050 0.040 0.060 10° 15° 35° 2 3 3 L2 L3 L4 5 3 5 3 L5 Ø Ø1 Ø2 Dimensioning and tolerancing as per ASME Y14.5M-1994 Lead dimension uncontrolled in L5 Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body Dimension b1 and c1 applied to base metal only Datum A and B to be determined at datum plane H Outline conforms to JEDEC outline TO-252AA (6) (7) (8) www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 95024 Revision: 05-Jan-11 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1