85EPF12

VS-85EPF12 Soft Recovery Series www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 85 A FEATURES • 150 °C max. operating junction temperature Cathode Anode • Output rectification and freewheeling inverters, choppers and converters in • Input rectifications where severe restrictions on conducted EMI should be met PowerTab® • Screw mounting only • Designed and qualified according to JEDEC-JESD47 • PowerTab® package PowerTab® 85 A 1200 V 1.36 V 110 A 95 ns 150 °C Single die 0.5 PRODUCT SUMMARY Package IF(AV) VR VF at IF IFSM trr TJ max. Diode variation Snap factor • Compliant to RoHS Directive 2002/95/EC DESCRIPTION The VS-85EPF12 fast soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. Available in the new PowerTab® package, this new series is suitable for a large range of applications combining excellent die to footprint ratio and sturdeness connectivity for use in high current environments. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) IF(RMS) VRRM IFSM VF trr TJ 100 A, TJ = 25 °C 1 A, - 100 A/μs Range Range CHARACTERISTICS Rect. conduction 50 % duty cycle at TC = 85 °C VALUES 85 160 1200 110 1.4 95 - 40 to 150 UNITS A V A V ns °C VOLTAGE RATINGS TYPE NUMBER VS-85EPF12 VRRM, MAXIMUM PEAK REVERSE VOLTAGE V 1200 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 1300 IRRM AT 150 °C mA 15 ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current Maximum I2t for fusing Maximum I2t for fusing Revision: 17-Jun-11 SYMBOL IF(AV) IFSM I2t I2t TEST CONDITIONS TC = 85 °C, 180° conduction half sine wave 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied t = 0.1 ms to 10 ms, no voltage reapplied VALUES 85 1100 1250 5000 7000 70 000 A2s A2s A UNITS Document Number: 93159 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-85EPF12 Soft Recovery Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER Maximum forward voltage drop Forward slope resistance Threshold voltage Maximum reverse leakage current SYMBOL VFM rt VF(TO) IRM TEST CONDITIONS 85 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C TJ = 150 °C VR = Rated VRRM VALUES 1.36 4.03 0.87 0.1 15 UNITS V m V mA RECOVERY CHARACTERISTICS PARAMETER Reverse recovery time Reverse recovery current Reverse recovery charge Snap factor SYMBOL trr Irr Qrr S TEST CONDITIONS IF at 85 Apk 25 A/μs 25 °C VALUES 480 7.1 2.1 0.5 UNITS ns A μC dir dt IFM ta trr tb Qrr IRM(REC) t THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, junction to ambient Typical thermal resistance, case to heatsink Approximate weight minimum maximum Case style PowerTab® SYMBOL TJ, TStg RthJC RthJA RthCS Mounting surface, smooth and greased DC operation TEST CONDITIONS VALUES - 40 to 150 0.35 40 0.2 6 0.21 6 (5) 12 (10) g oz. kgf · cm (lbf · in) 85EPF12 °C/W UNITS °C Mounting torque Marking device Revision: 17-Jun-11 Document Number: 93159 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-85EPF12 Soft Recovery Series www.vishay.com Vishay Semiconductors 200 180 160 140 120 100 80 60 Ø 150 RthJC (DC) = 0.35 K/W 130 Ø 120 110 100 90 80 30° 70 0 10 20 30 40 50 60° Conduction angle Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) 140 DC 180° 120° 90° 60° 30° RMS limit 90° 180° 120° 40 20 0 0 20 40 60 Conduction period TJ = 150 °C 80 100 120 140 60 70 80 90 93159_04 93159_01 Average Forward Current (A) Fig. 1 - Current Rating Characteristics Average Forward Current (A) Fig. 4 - Forward Power Loss Characteristics 150 RthJC (DC) = 0.35 °C/W 1200 1100 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s Maximum Allowable Case Temperature (°C) 140 130 Ø Peak Half Sine Wave Forward Current (A) 1000 900 800 700 600 500 400 300 120 110 100 90 60° 80 30° 70 0 20 40 60 90° Conduction period DC 120° 180° 80 100 120 140 93159_05 1 10 100 93159_02 Average Forward Current (A) Fig. 2 - Current Rating Characteristics Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current 160 1400 180° 120° 90° 60° 30° RMS limit 1300 1200 Maximum Average Forward Power Loss (W) 140 120 100 80 60 40 20 Peak Half Sine Wave Forward Current (A) 1100 1000 900 800 700 600 500 400 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied Ø Conduction angle TJ = 150 °C 0 0 10 20 30 40 50 60 70 80 90 300 0.01 93159_06 0.1 1 93159_03 Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 17-Jun-11 Document Number: 93159 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-85EPF12 Soft Recovery Series www.vishay.com 1000 4.0 TJ = 25 °C 3.5 IFM = 125 A IFM = 80 A IFM = 40 A Vishay Semiconductors Instantaneous Forward Current (A) Qrr - Maximum Reverse Recovery Charge (μC) 3.0 2.5 2.0 1.5 100 TJ = 150 °C 10 TJ = 25 °C IFM = 20 A IFM = 10 A 1.0 0.5 IFM = 1 A 0 40 80 120 160 200 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 93159_10 0 93159_07 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics dI/dt - Rate of Fall of Forward Current (A/μs) Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C 0.22 0.20 IFM = 125 A 14 IFM = 80 A TJ = 150 °C 12 10 8 6 4 2 IFM = 40 A IFM = 80 A 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0 40 80 120 160 200 TJ = 25 °C IFM = 1 A IFM = 10 A IFM = 40 A IFM = 20 A Qrr - Maximum Reverse Recovery Charge (μC) trr - Maximum Reverse Recovery Time (μs) IFM = 20 A IFM = 10 A IFM = 1 A 0 40 80 120 160 200 0 93159_08 dI/dt - Rate of Fall of Forward Current (A/μs) 93159_11 dI/dt - Rate of Fall of Forward Current (A/μs) Fig. 8 - Recovery Time Characteristics, TJ = 25 °C Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C 0.6 TJ = 150 °C 0.5 IFM = 80 A 0.4 0.3 0.2 0.1 IFM = 1 A 0 0 93159_09 22 20 TJ = 25 °C IFM = 80 A IFM = 40 A IFM = 20 A IFM = 10 A IFM = 125 A trr - Maximum Reverse Recovery Time (μs) Irr - Maximum Reverse Recovery Current (A) 18 16 14 12 10 8 6 4 2 0 IFM = 40 A IFM = 20 A IFM = 10 A IFM = 1 A 40 80 120 160 200 93159_12 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/μs) Fig. 9 - Recovery Time Characteristics, TJ = 150 °C dI/dt - Rate of Fall of Forward Current (A/μs) Fig. 12 - Recovery Current Characteristics, TJ = 25 °C Revision: 17-Jun-11 Document Number: 93159 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-85EPF12 Soft Recovery Series www.vishay.com 45 40 TJ = 150 °C IFM = 80 A IFM = 40 A IFM = 20 A Vishay Semiconductors Irr - Maximum Reverse Recovery Current (A) 35 30 25 20 15 10 5 0 0 40 80 120 IFM = 10 A IFM = 1 A 160 200 93159_13 dI/dt - Rate of Fall of Forward Current (A/μs) Fig. 13 - Recovery Current Characteristics, TJ = 150 °C ZthJC - Thermal Impedance (K/W) 1 Steady state value (DC operation) 0.1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single pulse 0.01 0.0001 0.001 0.01 0.1 1 10 93519_14 Square Wave Pulse Duration (s) Fig. 14 - Thermal Impedance ZthJC Characteristics Revision: 17-Jun-11 Document Number: 93159 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-85EPF12 Soft Recovery Series www.vishay.com ORDERING INFORMATION TABLE Vishay Semiconductors Device code VS1 85 2 E 3 P 4 F 5 12 6 1 2 3 - Vishay Semiconductors product Current rating Circuit configuration: E = Single diode 4 - Package: P = TO-247AC 5 - Type of silicon: F = Fast recovery 6 - Voltage code x 100 = VRRM (12 = 1200 V) LINKS TO RELATED DOCUMENTS Dimensions Part marking information Application note www.vishay.com/doc?95240 www.vishay.com/doc?95370 www.vishay.com/doc?95179 Revision: 17-Jun-11 Document Number: 93159 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors PowerTab® DIMENSIONS in millimeters (inches) 15.90 (0.62) 15.60 (0.61) 15.60 (0.61) 14.80 (0.58) 1.35 (0.05) 1.20 (0.04) 8.45 (0.33) 8.20 (0.32) 4.20 (0.16) 4.00 (0.15) Lead 1 12.40 (0.48) 12.10 (0.47) 18.25 (0.71) 18.00 (0.70) 27.65 (1.08) 27.25 (1.07) Ø 4.20 (Ø 0.16) Ø 4.00 (Ø 0.15) Lead 2 Ø 4.20 (Ø 0.16) Ø 4.00 (Ø 0.15) 5.45 REF. (0.21 REF.) 5.20 (0.20) 4.95 (0.19) 3.09 (0.12) 3.00 (0.11) 0.60 (0.02) 0.40 (0.01) 1.30 (0.05) 1.10 (0.04) 12.20 (0.48) 12.00 (0.47) 4.95 (0.19) 4.75 (0.18) Lead assignments Lead 1 = Cathode Lead 2 = Anode Revision: 03-Aug-11 Document Number: 95240 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 39.8 (1.56) 39.6 (1.55) Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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