HFA04SD60STRRP

VS-HFA04SD60SPbF www.vishay.com Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 4 A 2, 4 FEATURES • • • • • • • • Ultrafast recovery time Ultrasoft recovery Very low IRRM Very low Qrr Guaranteed avalanche Specified at operating temperature Compliant to RoHS Directive 2002/95/EC Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C 1 N/C 3 Anode D-PAK (TO-252AA) BENEFITS PRODUCT SUMMARY Package IF(AV) VR VF at IF trr typ. TJ max. Diode variation D-PAK (TO-252AA) 4A 600 V 1.8 V 17 ns 150 °C Single die • • • • • Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count DESCRIPTION/APPLICATIONS These diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for freewheeling, flyback, power converters, motor drives, and other applications where high speed and reduced switching losses are design requirements. ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage Maximum continuous forward current Single pulse forward current Repetitive peak forward current Maximum power dissipation Operating junction and storage temperatures SYMBOL VRRM IF(AV) IFSM IFRM PD TJ, TStg TC = 116 °C TC = 100 °C TC = 100 °C TEST CONDITIONS VALUES 600 4 25 16 10 - 55 to 150 W °C A UNITS V ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage See fig. 1 Maximum reverse leakage current Junction capacitance Series inductance Revision: 14-Jun-11 SYMBOL VBR, VR VF IR = 100 μA IF = 4 A IF = 8 A IF = 4 A, TJ = 125 °C IR CT LS VR = VR rated TJ = 125 °C, VR = 0.8 x VR rated VR = 200 V Measured lead to lead 5 mm from package body TEST CONDITIONS MIN. 600 TYP. 1.5 1.8 1.4 0.17 44 4 8.0 MAX. 1.8 2.2 1.7 3.0 300 8 μA pF nH V UNITS Document Number: 94034 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA04SD60SPbF www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS IF = 1.0 A, dIF/dt = 200 A/μA, VR = 30 V Reverse recovery time trr TJ = 25 °C TJ = 125 °C Peak recovery current IRRM Qrr dI(rec)M/dt TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C IF = 4 A dIF/dt = 200 A/μs VR = 200 V MIN. TYP. 17 28 38 2.9 3.7 40 70 280 235 MAX. 42 57 5.2 6.7 60 105 A ns UNITS Reverse recovery charge nC Rate of fall of recovery current A/μs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Thermal resistance, junction to case Thermal resistance, junction to ambient Weight Mounting torque Marking device Case style D-PAK SYMBOL TJ, TStg RthJC RthJA Typical socket mount TEST CONDITIONS MIN. - 55 6.0 (5.0) TYP. 2.0 0.07 MAX. 150 5.0 °C/W 80 12 (10) g oz. kgf · cm (lbf  in) UNITS °C HFA04SD60S Revision: 14-Jun-11 Document Number: 94034 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA04SD60SPbF www.vishay.com Vishay Semiconductors 1000 IF - Instantaneous Forward Current (A) 100 IR - Reverse Current (µA) 100 10 1 TJ = 150 °C 10 TJ = 125 °C 1 TJ = 175 °C TJ = 125 °C TJ = 25 °C TJ = 25 °C 0.1 0.01 0.001 0.1 0 1 2 3 4 5 6 0 100 200 300 400 500 VF - Forward Voltage Drop (V) Fig. 1 - Typical Forward Voltage Drop Characteristics VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 100 CT - Junction Capacitance (pF) TJ = 25 °C 10 1 1 10 100 1000 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (°C/W) 10 1 PDM t1 t2 0.1 Single pulse (thermal resistance) D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.0001 0.001 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 0.01 0.00001 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 14-Jun-11 Document Number: 94034 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA04SD60SPbF www.vishay.com 50 IF = 8 A IF = 4 A 40 200 180 160 140 VR = 200 V TJ = 125 °C TJ = 25 °C IF = 8 A IF = 4 A Vishay Semiconductors Qrr (nC) 30 VR = 200 V TJ = 125 °C TJ = 25 °C 20 100 1000 trr (ns) 120 100 80 60 40 20 100 1000 dIF/dt (A/µs) Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt dIF/dt (A/µs) Fig. 7 - Typical Stored Charge vs. dIF/dt 14 12 10 IF = 8 A IF = 4 A 1000 IF = 8 A IF = 4 A 8 6 4 2 0 100 VR = 200 V TJ = 125 °C TJ = 25 °C 1000 dI(rec)M/dt (A/µs) IRR (A) VR = 200 V TJ = 125 °C TJ = 25 °C 100 100 1000 dIF/dt (A/µs) Fig. 6 - Typical Recovery Current vs. dIF/dt dIF/dt (A/µs) Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt Revision: 14-Jun-11 Document Number: 94034 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA04SD60SPbF www.vishay.com Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D G IRFP250 S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) IF 0 trr ta tb Qrr (2) (4) IRRM 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Revision: 14-Jun-11 Document Number: 94034 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA04SD60SPbF www.vishay.com ORDERING INFORMATION TABLE Device code Vishay Semiconductors VS1 HF 2 A 3 04 4 SD 5 60 6 S 7 TR 8 PbF 9 1 2 3 4 5 6 7 - Vishay Semiconductors product HEXFRED® family Electron irradiated Current rating (04 = 4 A) D-PAK Voltage rating (60 = 600 V) S = D-PAK TR = Tape and reel TRR = Tape and reel (right oriented) TRL = Tape and reel (left oriented) 8 9 - PbF = Lead (Pb)-free P = Lead (Pb)-free (for TRR and TRL) LINKS TO RELATED DOCUMENTS Dimensions Part marking information Packaging information www.vishay.com/doc?95016 www.vishay.com/doc?95059 www.vishay.com/doc?95033 Revision: 14-Jun-11 Document Number: 94034 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay High Power Products D-PAK (TO-252AA) DIMENSIONS in millimeters and inches (5) E b3 Ø2 (3) A 0.010 M C A B L3 (3) 4 B D (5) 1 2 3 L4 Ø1 Seating plane H D1 0.488 (12.40) 0.409 (10.40) A C c2 A Pad layout 0.265 MIN. (6.74) E1 4 0.245 MIN. (6.23) 3 2 1 (2) L5 b b2 2x e Detail “C” c 0.010 M C A B Detail “C” Rotated 90 °CW Scale: 20:1 Lead tip Gauge plane L2 Ø C C L 0.089 MIN. (2.28) A 0.06 MIN. (1.524) 0.093 (2.38) 0.085 (2.18) (L1) H (7) C Seating plane A1 SYMBOL A A1 b b2 b3 c c2 D D1 E E1 Notes (1) (2) (3) (4) (5) MILLIMETERS MIN. 2.18 0.64 0.76 4.95 0.46 0.46 5.97 5.21 6.35 4.32 MAX. 2.39 0.13 0.89 1.14 5.46 0.61 0.89 6.22 6.73 - INCHES MIN. 0.086 0.025 0.030 0.195 0.018 0.018 0.235 0.205 0.250 0.170 MAX. 0.094 0.005 0.035 0.045 0.215 0.024 0.035 0.245 0.265 - NOTES SYMBOL e H L L1 MILLIMETERS MIN. 9.40 1.40 MAX. 10.41 1.78 2.29 BSC INCHES MIN. 0.370 0.055 MAX. 0.410 0.070 0.090 BSC NOTES 2.74 BSC 0.51 BSC 0.89 1.14 0° 0° 25° 1.27 1.02 1.52 10° 15° 35° 0.108 REF. 0.020 BSC 0.035 0.045 0° 0° 25° 0.050 0.040 0.060 10° 15° 35° 2 3 3 L2 L3 L4 5 3 5 3 L5 Ø Ø1 Ø2 Dimensioning and tolerancing as per ASME Y14.5M-1994 Lead dimension uncontrolled in L5 Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body Dimension b1 and c1 applied to base metal only Datum A and B to be determined at datum plane H Outline conforms to JEDEC outline TO-252AA (6) (7) (8) Document Number: 95016 Revision: 04-Nov-08 For technical questions concerning discrete products, contact: diodes-tech@vishay.com For technical questions concerning module products, contact: ind-modules@vishay.com www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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