0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
HFA04SD60S

HFA04SD60S

  • 厂商:

    TFUNK(威世)

  • 封装:

    TO-252

  • 描述:

    Diode Standard 600V 4A Surface Mount D-Pak

  • 数据手册
  • 价格&库存
HFA04SD60S 数据手册
Bulletin PD-20617 rev. D 10/06 HFA04SD60S Ultrafast, Soft Recovery Diode Features • • • • • • t rr = 38ns IF(AV) = 4Amp VR = 600V Ultrafast Recovery Time Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Temperature Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation • Reduced Snubbing • Reduced Parts Count Description/ Applications Package Outline These diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for freewheeling, flyback, power converters, motor drives, and other applications where high speed and reduced switching losses are design requirements. D - PAK Absolute Maximum Ratings Parameters VRRM Cathode-to-Anode Voltage IF(AV) Continuous Forward Current Max Units 600 V 4 A TC = 100°C IFSM Single Pulse Forward Current 25 IFRM Peak Repetitive Forward Current 16 TC = 116°C PD Maximum Power Dissipation 10 W - 55 to 150 °C TC = 100°C TJ, TSTG Operating Junction and Storage Temperatures Document Number: 93031 www.vishay.com 1 HFA04SD60S Bulletin PD-20617 rev. D 10/06 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions VBR, Vr Breakdown Voltage, Blocking Voltage 600 - - V IR = 100µA VF Forward Voltage - 1.5 1.8 V IF = 4A See Fig. 1 - 1.8 2.2 V IF = 8A - 1.4 1.7 V IF = 4A, T J = 125°C - 0.17 3.0 µA VR = VR Rated - 44 300 µA TJ = 125°C, VR = 0.8 x VR Rated IR Max. Reverse Leakage Current CT Junction Capacitance - 4 8 pF VR = 200V LS Series Inductance - 8.0 - nH Measured lead to lead 5mm from package body Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified) Parameters trr Min Typ Max Units Test Conditions Reverse Recovery Time IRRM Qrr Peak Recovery Current Reverse Recovery Charge di(rec)M/dt Rate of Fall of recovery Current - 17 - ns - 28 42 TJ = 25°C - 38 57 TJ = 125°C - 2.9 5.2 - 3.7 6.7 - 40 60 - 70 105 - 280 - - 235 - A IF = 1.0A, diF/dt = 200A/µA, V R = 30V IF = 4A VR = 200V diF /dt = 200A/µs TJ = 25°C TJ = 125°C nC TJ = 25°C TJ = 125°C A/µs TJ = 25°C TJ = 125°C Thermal - Mechanical Characteristics Parameters Min Typ Max TJ Max. Junction Temperature Range - - - 55 to 150 TStg Max. Storage Temperature Range - - - 55 to 150 TS Soldering Temperature, 10 sec - - 240 RthJC Thermal Resistance, Junction to Case - - 5.0 RthJA  Thermal Resistance, Junction to Ambient - - 80 Wt Weight T  Mounting Torque Units °C °C/ W - 2.0 - g - 0.07 - (oz) 6.0 - 12 Kg*cm 5.0 - 10 lbf*in Typical Socket Mount Document Number: 93031 www.vishay.com 2 HFA04SD60S Bulletin PD-20617 rev. D 10/06 1000 100 T J = 150˚C Reverse Current - I R (µA) 100 T = 150˚C J 1 25˚C 0.1 0.01 0.001 0 100 200 300 400 500 T = 125˚C J Reverse Voltage - VR (V) T = 25˚C J Fig. 2 - Typical Values Of Reverse Current Vs. Reverse Voltage 100 Junction Capacitance - C T (pF) Instantaneous Forward Current - I F (A) 10 125˚C 10 1 0.1 0 1 2 3 4 5 6 T J = 25˚C 10 1 Forward Voltage Drop - VFM (V) Thermal Impedance Z thJC (°C/W) 10 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.1 0.01 0.00001 10 100 1000 Reverse Voltage - V R (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage Fig. 1 - Typical Forward Voltage Drop Characteristics 1 1 PDM t1 Single Pulse (Thermal Resistance) t2 Notes: 1. Duty factor D = t1/ t2 2. Peak Tj = Pdm x ZthJC + Tc 0.0001 0.001 0.01 0.1 t1, Rectangular Pulse Duration (Seconds) Fig. 4 - Max. Thermal Impedance Z thJC Characteristics Document Number: 93031 www.vishay.com 3 HFA04SD60S Bulletin PD-20617 rev. D 10/06 50 14 If = 8A If = 4A 12 If = 8A If = 4A 10 Irr (A) trr (ns) 40 8 6 30 4 Vr = 200V Tj = 125˚C Tj = 25˚C Vr = 200V Tj = 125˚C Tj = 25˚C 2 20 100 0 100 1000 di F /dt (A/ µs) Fig. 5 - Typical Reverse Recovery vs. di F /dt Fig. 6 - Typical Recovery Current vs. di F /dt 1000 200 Vr = 200V Tj = 125˚C Tj = 25˚C 180 If = 8A If = 4A 160 140 If = 8A If = 4A 120 di (rec)M / dt (A/ µs) Qrr ( nC ) 1000 Average Forward Current - I F(AV) (A) 100 80 60 Vr = 200V Tj = 125˚C Tj = 25˚C 40 20 100 1000 100 100 1000 di F /dt (A/µs ) di F /dt (A/µs ) Fig. 7 - Typical Stored Charge vs. di F /dt Fig. 8 - Typical di (rec)M /dt vs. di F /dt Document Number: 93031 www.vishay.com 4 HFA04SD60S Bulletin PD-20617 rev. D 10/06 Reverse Recovery Circuit VR = 200V 0.01 Ω L = 70µH D.U.T. D di F /dt dif/dt ADJUST G IRFP250 S Fig. 9- Reverse Recovery Parameter Test Circuit 3 t rr IF tb ta 0 2 Q rr I RRM 4 0.5 I RRM di(rec)M/dt 5 0.75 I RRM 1 /dt di fF/dt 1. diF /dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current 4. Qrr - Area under curve defined by t rr and IRRM t rr x I RRM Q rr = 2 5. di (rec)M /dt - Peak rate of change of current during t b portion of t rr Fig. 10 - Reverse Recovery Waveform and Definitions Document Number: 93031 www.vishay.com 5 HFA04SD60S Bulletin PD-20617 rev. D 10/06 Outline Table 2.38 (0.09) 6.73 (0.26) 2.19 (0.08) 1.14 (0.04) 6.35 (0.25) MINIMUM RECOMMENDED FOOTPRINT 0.89 (0.03) 5.46 (0.21) 1.27 (0.05) 5.21 (0.20) 0.58 (0.02) 0.88 (0.03) 0.46 (0.02) 5.97 (0.24) 4 6.45 (0.24) 6.22 (0.24) 1.64 (0.02) 5.68 (0.22) 1 2 6.48 (0.26) 10.42 (0.41) 5.97 (0.23) 10.67 (0.42) 9.40 (0.37) 3 0.51 (0.02) MIN. 1.52 (0.06) 2x 2.54 (0.10) 1.15 (0.04) 2x 3x 1.14 (0.04) 0.76 (0.03) 2.28 (0.09) 2x 0.89 (0.03) 0.64 (0.02) 0.58 (0.02) 1.65 (0.06) 0.46 (0.02) 2x Anode 1 1- -NC Cathode 2 2- -Cathode 3 - Anode 3 4- -Anode Cathode 4 - Cathode 4.57 (0.18) 2.28 (0.09) 2x 2 Conform to JEDEC outline D-Pak Dimensions in millimeters and (inches) 1 N/C 3 Anode Tape & Reel Information TRR 1.60 (0.063) 1.50 (0.059) 4.10 (0.161) 3.90 (0.153) 1.60 (0.063) 1.50 (0.059) DIA. 0.368 (0.0145) 0.342 (0.0135) FEED DIRECTION 1.85 (0 .07 3) 1.65 (0 .06 5) 11.60 (0.457) 11.40 (0.449) 15 .42 (0.6 09) 15 .22 (0.6 01) TRL 1.75 (0.06 9) 10 .90 (0.4 29) 10 .70 (0.4 21) 1.25 (0.04 9) 24 .30 (0 .95 7) 23 .90 (0 .94 1) DIA. 16 .10 (0.6 34) 4.72 (0.186) 4.52 (0.178) 15 .90 (0.6 26) FEED DIRECTION 13.50 (0.532) 12.80 (0.504) DIA. 26 .40 (1.0 39) 24 .40 (0.9 61) SMD-220 Tape & Reel When ordering, indicate the part 360 (14.173) DIA. MAX. Document Number: 93031 60 (2 .36 2) D IA . MIN . Tape number,SMD-220 part orientation, and& theReel quantity. Quantities are in multiples When ordering, indicate the part of 800 pieces per reel for both number, part orientation and the TRL and TRR. quantity. Quantities are in multiples of 800 pieces per reel for both TRL and TRR. www.vishay.com 6 HFA04SD60S Bulletin PD-20617 rev. D 10/06 Marking Information INTERNATIONAL EXAMPLE: THIS IS AN HFA04SD60S RECTIFIER LOGO 2 (K) PART NUMBER HFA04SD60S 9812 5K3A ASSEMBLY DATE CODE (YYWW) LOT CODE NC 3 (A) YY = YEAR WW = WEEK Ordering Information Table Device Code HF A 04 SD 60 S 1 2 3 4 5 6 1 - Hexfred Family 2 - Electron Irradiated 3 - Current Rating (04 = 4A) 4 - D-PAK 5 - Voltage Rating (60 = 600V) 6 - Suffix S = D2PAK/ Dpak TR = Tape & Reel TRL = Tape & Reel Left TRR= Tape & Reel Right Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 10/06 Document Number: 93031 www.vishay.com 7 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below. Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. International Rectifier®, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN® are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product names noted herein may be trademarks of their respective owners. Document Number: 99901 Revision: 12-Mar-07 www.vishay.com 1
HFA04SD60S 价格&库存

很抱歉,暂时无法提供与“HFA04SD60S”相匹配的价格&库存,您可以联系我们找货

免费人工找货