S1PA thru S1PJ
New Product
Vishay Semiconductors
formerly General Semiconductor
Case Style SMP
Cathode band
High Current Density Surface Mount Glass-Passivated Rectifiers Reverse Voltage 50 to 600 V
Features
• • • • Forward Current 1.0 A Very low profile - typical height of 1.0mm Ideal for automated placement Glass passivated chip junction For use in rectification, power supply, home appliances and telecommunication • High temperature soldering: 260°C maximum/10 seconds at terminals • Meets MSL level 1 per J-STD-020C
0.086 (2.18) 0.074 (1.88)
0.142 (3.61) 0.126 (3.19) 0.158 (4.00) 0.146 (3.70)
Mechanical Data
0.013 (0.35) 0.004 (0.10) 0.045 (1.15) 0.033 (0.85) 0.012 (0.30) 0.000 (0.00)
Case: SMP Terminals: Matte Tin plated (E3 Suffix) leads, solderable per J-STD-002B and MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Weight: 0.0009 oz., 0.024 g Epoxy meets UL 94V-0 flammability rating
0.018 (0.45) 0.006 (0.15)
Mounting Pad Layout
Dimensions in inches and (millimeters)
0.105 (2.67) 0.025 (0.635) 0.030 (0.762)
0.012 (0.30) REF
0.053 (1.35) 0.041 (1.05)
0.036 (0.91) 0.024 (0.61)
0.100 (2.54)
0.050 (1.27)
0.103 (2.60) 0.087 (2.20)
0.032 (0.80) 0.016 (0.40)
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter Device marking code Maximum reverse voltage Maximum average forward rectified current Fig.1 Peak forward surge current 10ms single half sine-wave superimposed on rated load Typical thermal resistance (1) Operating junction temperature Storage temperature Symbol VRM IF(AV) IFSM RθJA RθJL RθJC TJ, TSTG S1PA SA 50 S1PB SB 100 S1PD SD 200 1 30 105 15 20 150 –55 to +150 S1PG SG 400 S1PJ SJ 600 Unit V A A °C/W °C °C
Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Parameter Symbol Maximum instantaneous forward voltage(2) at IF=1A, TJ=25°C VF at IF=1A, TJ=125°C Maximum reverse current TJ = 25°C IR at rated VR(2) TJ =125°C Typical reverse recovery time at trr at IF = 0.5A, IR = 1.0A, Irr = 0.25A Typical junction capacitance at 4.0V, 1MHz
Value 1.1 0.95 1.0 50 1.8
Unit V µA µs
CJ 6.0 pF Notes: (1) Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 5.0 x 5.0mm copper pad areas. RθJL is measured at the terminal of cathode band. RθJC is measured at the top centre of the body (2) Pulse test: 300µs pulse width, 1% duty cycle
Document Number 88917 23-Sep-04 www.vishay.com 1
S1PA thru S1PJ
Vishay Semiconductors
formerly General Semiconductor
Ratings and Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 – Maximum Forward Current Derating Curve
1.2 30
Fig. 2 – Maximum Non-Repetitive Peak Forward Surge Current
Average Forward Rectified Current (A)
Peak Forward Surge Current (A)
1.0 0.8 0.6 0.4 TL measured at the cathode band terminal 0.2 0 80 90 100 110 120 130 140 150
25
20 15
10 05
0 1 10 100
Lead Temperature (°C)
Number of Cycles at 50 HZ
Fig. 3 – Typical Instantaneous Forward Characteristics
100 100
Fig. 4 – Typical Reverse Leakage Characteristics
Instantaneous Reverse Current (µA)
TJ = 150°C 10 TJ = 125°C
Instantaneous Forward Current (A)
10
TJ = 150°C
1 TJ = 25°C 0.1 TJ = 125°C 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
1
0.1
TJ = 25°C
0.01 10 20 30 40 50 60 70 80 90 100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 – Typical Junction Capacitance
1000 1000
Fig. 6 – Typical Transient Thermal Impedance
Transient Thermal Impedance (°C/W)
Junction Capacitance (pF)
100
100
10
1 0.1 1 10 100
1 0.01
0.1
1
10
100
Reverse Voltage (V)
t, Pulse Duration (sec.)
www.vishay.com 2
Document Number 88917 23-Sep-04
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