SD303C04S10C_12

SD303C..C Series Vishay High Power Products Fast Recovery Diodes (Hockey PUK Version), 350 A FEATURES • High power FAST recovery diode series • 1.0 to 2.0 µs recovery time • High voltage ratings up to 2500 V • High current capability • Optimized turn-on and turn-off characteristics DO-200AA RoHS COMPLIANT • Low forward recovery • Fast and soft reverse recovery • Press PUK encapsulation • Case style conform to JEDEC DO-200AA • Maximum junction temperature 125 °C PRODUCT SUMMARY IF(AV) 350 A • Lead (Pb)-free TYPICAL APPLICATIONS • Snubber diode for GTO • High voltage freewheeling diode • Fast recovery rectifier applications MAJOR RATINGS AND CHARACTERISTICS PARAMETER IF(AV) TEST CONDITIONS VALUES 350 Ths 55 550 IF(RMS) Ths 50 Hz IFSM 60 Hz 50 Hz 60 Hz VRRM trr TJ Range 25 5770 A 6040 166 152 400 to 2500 1.0 to 2.0 TJ 25 °C - 40 to 125 V µs kA2s UNITS A °C A °C I2 t Document Number: 93174 Revision: 04-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 1 SD303C..C Series Vishay High Power Products ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 04 SD303C..S10C 08 10 12 SD303C..S15C 14 16 SD303C..S20C 20 25 VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V 400 800 1000 1200 1400 1600 2000 2500 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 500 900 1100 1300 1500 1700 2100 2600 35 IRRM MAXIMUM AT TJ = 125 °C mA Fast Recovery Diodes (Hockey PUK Version), 350 A FORWARD CONDUCTION PARAMETER Maximum average forward current at heatsink temperature Maximum RMS current SYMBOL IF(AV) IF(RMS) TEST CONDITIONS 180° conduction, half sine wave Double side (single side) cooled 25 °C heatsink temperature double side cooled t = 10 ms Maximum peak, one-cycle , non-repetitive forward current IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing I 2 √t VF(TO)1 VF(TO)2 rf1 rf2 VFM No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied VALUES 350 (175) 55 (75) 550 5770 6040 4850 Sinusoidal half wave, initial TJ = TJ maximum 5080 166 152 117 107 1660 1.14 1.63 1.14 0.77 2.26 kA2√s V mΩ V kA2s A UNITS A °C t = 0.1 to 10 ms, no voltage reapplied (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum (I > π x IF(AV)), TJ = TJ maximum (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum (I > π x IF(AV)), TJ = TJ maximum Ipk = 1100 A, TJ = 25 °C; tp = 10 ms sinusoidal wave Low level value of threshold voltage High level value of threshold voltage Low level of forward slope resistance High level of forward slope resistance Maximum forward voltage drop RECOVERY CHARACTERISTICS MAXIMUM VALUE AT TJ = 25 °C CODE trr AT 25 % IRRM (µs) 1.0 1.5 2.0 750 25 - 30 TEST CONDITIONS Ipk SQUARE PULSE (A) TYPICAL VALUES AT TJ = 125 °C Vr (V) trr AT 25 % IRRM (µs) 2.4 2.9 3.2 Qrr (µC) 52 90 107 Irr (A) 33 44 46 IFM dI/dt (A/µs) trr t Qrr IRM(REC) S10 S15 S20 dir dt www.vishay.com 2 For technical questions, contact: ind-modules@vishay.com Document Number: 93174 Revision: 04-Aug-08 SD303C..C Series Fast Recovery Diodes Vishay High Power Products (Hockey PUK Version), 350 A THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum operating temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink Mounting force, ± 10 % Approximate weight Case style See dimensions - link at the end of datasheet SYMBOL TJ TStg DC operation single side cooled RthJ-hs DC operation double side cooled TEST CONDITIONS VALUES - 40 to 125 °C - 40 to 150 0.16 K/W 0.08 4900 (500) 70 DO-200AA N (kg) g UNITS ΔRthJ-hs CONDUCTION SINUSOIDAL CONDUCTION CONDUCTION ANGLE SINGLE SIDE 180° 120° 90° 60° 30° 0.010 0.012 0.016 0.024 0.042 DOUBLE SIDE 0.011 0.013 0.016 0.024 0.042 SINGLE SIDE 0.008 0.013 0.018 0.025 0.042 DOUBLE SIDE 0.008 0.013 0.018 0.025 0.042 TJ = TJ maximum K/W RECTANGULAR CONDUCTION TEST CONDITIONS UNITS Note • The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC Document Number: 93174 Revision: 04-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 SD303C..C Series Vishay High Power Products Fast Recovery Diodes (Hockey PUK Version), 350 A 130 Maximum Allow able Heatsink Temperature (°C) 120 110 100 90 80 70 60 50 40 0 100 200 300 400 500 600 Average Forwa rd Curren t (A) 30° 60° 90° 120° 180° DC C o ndu c tio n Pe rio d 130 Maxim um Allow able Heatsink Tem perature (°C) 120 110 100 90 80 70 60 0 20 40 60 SD303C..C Series (Sin gle Side Cooled) R th J-hs (DC) = 0.16 K/W SD303C..C Series (D ouble Side Cooled) R th J- hs (DC) = 0.08 K/W C o nduc tio n A ng le 180° 30° 60° 90° 120° 80 100 120 140 160 180 Averag e Forw ard Current (A) Fig. 1 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics 1 30 M a x im um A llo w a b le H ea t sin k T e m p e ra t u re (° C ) M a x im u m A v e ra g e F o rw a rd P o w e r Lo ss (W ) 1 20 1 10 1 00 90 80 70 60 50 0 50 10 0 150 2 00 250 3 00 A v e ra g e F o r w a rd C u rre n t (A ) 30° 60° 90° 120° 180° DC C o ndu c tio n P e rio d 8 00 S D 3 0 3 C ..C S e rie s (S in g le Sid e C o o le d ) R thJ-hs (D C ) = 0 .1 6 K /W 7 00 6 00 5 00 4 00 3 00 C o nduc tio n An g le 1 8 0° 1 2 0° 90° 60° 30° R M S Lim it 2 00 1 00 0 0 50 1 0 0 1 5 0 20 0 25 0 30 0 3 5 0 4 00 A v e ra g e F o rw a rd C u rre n t (A ) SD 3 0 3 C ..C Se rie s TJ = 1 2 5°C Fig. 2 - Current Ratings Characteristics Fig. 5 - Forward Power Loss Characteristics M a xim u m A v e r a ge Fo rw a rd Po w e r Lo ss (W ) 130 Maxim um Allow able Heatsink Tem perature (°C) 120 110 100 90 80 70 60 50 40 0 50 1 00 0 SD303C..C Series (D ouble Side Cooled) R thJ-h s (DC) = 0.08 K/W 9 00 8 00 7 00 6 00 DC 1 8 0° 1 2 0° 90° 60° 30° C o nduc tio n A ng le 5 0 0 R M S Lim it 4 00 3 00 2 00 1 00 0 0 100 2 00 3 00 400 5 00 6 00 A v e ra g e Fo rw a rd C u r re n t (A ) SD 3 0 3 C ..C Se rie s T J = 1 2 5°C C o ndu ct io n Pe rio d 30° 60° 90° 120° 180° 100 150 200 250 300 350 400 Average Forward Curren t (A) Fig. 3 - Current Ratings Characteristics Fig. 6 - Forward Power Loss Characteristics www.vishay.com 4 For technical questions, contact: ind-modules@vishay.com Document Number: 93174 Revision: 04-Aug-08 SD303C..C Series Fast Recovery Diodes Vishay High Power Products (Hockey PUK Version), 350 A 55 0 0 P e a k H a lf S in e W a v e Fo rw a rd C u rr e n t (A ) 50 0 0 45 0 0 40 0 0 35 0 0 30 0 0 25 0 0 20 0 0 1 10 1 00 N um be r O f E qua l Am p litude Ha lf C yc le C urrent Pulses (N ) In st a n t a n e o u s Fo rw a rd C urre n t (A ) A t A n y Ra t e d Lo a d C o n d it io n A n d W ith R a t e d V RRM A p p lie d F o llo w in g Su rg e . In itia l TJ = 1 2 5°C @ 6 0 H z 0 .0 0 8 3 s @ 5 0 H z 0 .0 1 0 0 s 10000 SD 3 0 3 C ..C Se r ie s 1 000 100 TJ = 2 5 ° C TJ = 1 2 5 ° C SD 3 0 3 C ..C Se r ie s 10 0 1 2 3 4 5 6 7 8 In sta n t a n e o us Fo rw a rd V o lta g e (V ) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 9 - Forward Voltage Drop Characteristics 6000 P e a k H a lf Sine W a v e Fo rw a rd C urr e n t (A ) 5500 5000 4500 4000 3500 3000 2500 2000 M a x im u m N o n R e p e t itiv e S u rg e C u rre n t V e r su s P u lse T ra in D u ra t io n . In itia l TJ = 1 2 5 ° C N o V o lt a g e R e a p p lie d R a t e d V RR M e a p p lie d R 1 (K / W ) St e a d y S ta t e V a lu e R thJ-hs = 0 .1 6 K / W ( Sin g le Sid e C o o le d) 0 .1 R thJ-h s = 0 .0 8 K / W ( D o u b le S id e C o o le d ) ( D C O p e ra tio n ) T ra n sie n t T h e rm a l I m p e d a n c e Z thJ-hs 0 .0 1 SD 3 0 3 C ..C Se rie s 0 .0 0 1 0 .0 0 0 1 0 .0 0 1 S D 3 0 3 C ..C Se rie s 0.1 P u lse T ra in D u ra t io n (s) 1 1500 0.01 0 .0 1 0 .1 1 10 10 0 Sq u a re W a v e Pu lse D ur at io n ( s) Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 10 - Thermal Impedance ZthJ-hs Characteristic 1 20 V 1 00 F o rw a rd R e c o v e ry ( V ) 80 FP I T = 1 2 5°C J 60 TJ = 2 5°C 40 20 S D 3 0 3 C ..S2 0 C Se rie s 0 0 20 0 40 0 600 8 00 10 0 0 12 00 1 40 0 1 60 0 18 0 0 200 0 R at e O f f F a ll O f F o rw a rd C u rre n t d i/ d t ( A / u se c ) Fig. 11 - Typical Forward Recovery Characteristics Document Number: 93174 Revision: 04-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 SD303C..C Series Vishay High Power Products Fast Recovery Diodes (Hockey PUK Version), 350 A 3 .6 M a x im u m R e v e rse R e c o v e ry T im e - T rr ( µ s) SD 3 0 3 C ..S1 0 C Se rie s TJ = 1 2 5 °C , V r = 3 0 V I FM = 750 A Squ are Pu lse 2 .8 M a xim um R e ve rse R e c o v e ry T im e - Trr ( µ s) 2 .6 2 .4 2 .2 SD 3 0 3 C ..S 1 5 C S e rie s TJ = 1 2 5 °C , V r = 3 0 V 3 .2 I FM = 75 0 A 2 .8 Sq ua re Pulse 2 .4 4 00 A 2 1 .8 4 00 A 2 20 0 A 200 A 1 .6 10 100 1 .6 10 100 R ate O f Fall O f Fo rwa rd C urre nt - di/dt (A /µs) R ate O f Fa ll O f Fo rw ard C urre nt - di/dt (A /µs) Fig. 12 - Recovery Time Characteristics Fig. 15 - Recovery Time Characteristics 14 0 M a x im um Re v e rse R e c o v e ry C h a rg e - Q rr ( µ C ) 170 M a xim u m R e v e rse R e co v e ry C h a rg e - Q r r ( µ C ) I FM = 750 A Squ are Pulse 13 0 12 0 11 0 10 0 90 80 70 60 50 40 30 20 10 0 20 40 160 150 140 130 120 110 100 90 80 70 60 50 I FM = 75 0 A Squa re Pulse 40 0 A 4 00 A 20 0 A 20 0 A S D 3 0 3 C ..S 1 0 C Se rie s TJ = 1 2 5 °C , V r = 3 0 V 60 80 100 SD 3 0 3C ..S 1 5 C S e rie s TJ = 1 2 5 ° C , V r = 3 0 V 10 20 30 4 0 50 60 70 80 9 0 100 Ra te O f Fall O f Fo rw ard Cu rrent - d i/dt (A /µs) Rate O f Fa ll O f Fo rw ard Current - di/dt (A /µs) Fig. 13 - Recovery Charge Characteristics Fig. 16 - Recovery Charge Characteristics 1 00 M a xim u m R e v e rse R e c o v e ry C u rre n t - Irr ( A ) M a xim u m R e v e rse R e c o v e ry C u rre n t - Irr (A ) I FM = 75 0 A 1 30 Square Pulse 4 00 A 90 80 70 60 50 40 30 20 1 20 1 10 1 00 90 80 70 60 50 40 30 20 10 I FM = 7 50 A Sq uare Pu lse 20 0 A 4 00 A 20 0 A SD 3 0 3 C ..S1 0 C Se rie s TJ = 1 2 5 °C , V r = 3 0 V 20 30 40 5 0 60 70 80 90 10 0 SD 3 0 3 C ..S1 5 C Se rie s TJ = 1 2 5 ° C , V r = 3 0 V 1 0 20 30 40 50 60 70 80 90 1 00 Rate O f Fall O f Fo rwa rd Curre n t - di/d t (A/µs) R ate O f Fall O f Fo rw ard Cu rre nt - di/d t (A/µs) Fig. 14 - Recovery Current Characteristics Fig. 17 - Recovery Current Characteristics www.vishay.com 6 For technical questions, contact: ind-modules@vishay.com Document Number: 93174 Revision: 04-Aug-08 SD303C..C Series Fast Recovery Diodes Vishay High Power Products (Hockey PUK Version), 350 A 3.6 3 00 SD30 3C..S20C Series TJ = 125 °C, V r = 30V Maxim um Rever se Recov ery Tim e - Trr (µs) M a xim u m R e v e rse R e c o v e ry C h a rg e - Q rr ( µC ) I FM = 7 50 A 3.4 3.2 2 50 Sq ua re Pulse I FM = 75 0 A Sq uare Pulse 2 00 4 00 A 3 2.8 2.6 2.4 10 4 00 A 20 0 A 1 50 20 0 A 1 00 SD 3 0 3 C ..S2 0 C Se rie s TJ = 1 2 5 ° C , V r = 3 0 V 50 10 20 30 4 0 50 60 70 80 90 100 10 0 Rate O f Fall O f Fo rwa rd Curre nt - di/dt (A /µs) Rate O f Fall O f Fo rw ard Current - di/dt (A /µs) Fig. 18 - Recovery Time Characteristics Fig. 19 - Recovery Charge Characteristics 130 M a x im um R e v e rse R e c o v e ry C u rre n t - Irr (A ) 120 110 100 90 80 70 60 50 40 30 20 I FM = 7 50 A Sq uare Pu lse 4 00 A 2 00 A SD 3 0 3 C ..S 2 0 C S e rie s TJ = 1 2 5 °C , V r = 3 0 V 10 20 3 0 40 50 60 70 80 90 10 0 Rate O f Fall O f Forw ard Current - di/d t ( A/µs) Fig. 20 - Recovery Current Characteristics 1 E4 4 10 2 0 jo ule s pe r pulse 4 10 20 jo u le s p er pulse 2 P e a k F o rw a rd C u rre n t (A ) 1 2 1 0 .2 0.1 0.4 1 E3 0 .1 0. 04 0 .02 0 .4 0 .2 1 E2 0.0 1 S D 3 0 3C ..S10 C S e ri es S in uso ida l Pul se TJ = 1 25°C , V RRM = 1 1 2 0 V d v /d t = 1 0 0 0V / µs S D 30 3 C ..S1 0 C Se rie s Tr ape zo id al Pul se TJ = 1 2 5°C , V RRM = 1 1 2 0V d v / dt = 1 0 00 V/ µs ; di/ dt=5 0 A/ µ s tp tp 1 E1 1 E1 1E 2 1 E3 1 E4 1E1 1 E2 1E3 1E4 P u lse B a se w id t h (µ s) P ulse Ba se w id t h (µ s) Fig. 21 - Maximum Total Energy Loss Per Pulse Characteristics Document Number: 93174 Revision: 04-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 7 SD303C..C Series Vishay High Power Products Fast Recovery Diodes (Hockey PUK Version), 350 A 1E4 20 jo ules pe r p ulse 10 20 jo ule s per p ulse 2 1 0 .4 0.2 4 10 P e a k F o rw a rd C u rr e n t (A ) 2 1 4 1E3 0 .4 0 .2 0 .1 0 .04 0.0 2 1E2 S D 3 0 3 C..S15 C Se ri es S inu so idal P ulse TJ = 1 2 5°C, V RRM = 1 7 6 0 V d v / dt = 10 0 0 V/ µ s S D 3 0 3 C..S1 5 C Se rie s T rape zo idal Pu lse T J = 1 2 5°C , V R RM = 1 7 6 0V d v/ dt = 1 0 0 0 V/ µs ; di / dt= 5 0 A/ µ s tp tp 1E1 1E 1 1E2 1E 3 1 E4 1E1 1 E2 1 E3 1 E4 Pu lse B a se w id t h (µ s) P u lse B a se w id th (µ s) Fig. 22 - Maximum Total Energy Loss Per Pulse Characteristics 1E4 10 4 20 jo u le s per pu lse 20 jo ule s per p ulse 10 4 2 1 0 .4 Pe a k F o rw a rd C ur re nt ( A ) 2 1E3 0. 4 0.2 0.1 1 1E2 0. 04 0 .2 S D 3 0 3 C..S2 0 C Se rie s T rape zo ida l Pul se TJ = 1 2 5°C , V R R M = 1 7 6 0 V d v / dt = 1 0 0 0 V/ µs ; di / dt= 5 0 A/ µ s tp S D3 0 3 C..S2 0 C Se rie s S in uso ida l Pu lse TJ = 1 2 5°C, V RRM= 1 7 60 V d v / dt = 1 0 0 0 V/ µs tp 1E1 1E1 1E2 1 E3 1 E4 1E1 1 E2 1E 3 1 E4 Pu lse B a se w id t h ( µ s) P u lse B a se w id th (µ s) Fig. 23 - Maximum Total Energy Loss Per Pulse Characteristics www.vishay.com 8 For technical questions, contact: ind-modules@vishay.com Document Number: 93174 Revision: 04-Aug-08 SD303C..C Series Fast Recovery Diodes Vishay High Power Products (Hockey PUK Version), 350 A ORDERING INFORMATION TABLE Device code SD 1 1 2 3 4 5 6 7 30 2 Diode 3 3 C 4 25 5 S20 6 C 7 Essential part number 3 = Fast recovery C = Ceramic PUK Voltage code x 100 = VRRM (see Voltage Ratings table) trr code (see Recovery Characteristics table) C = PUK case DO-200AA LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95248 Document Number: 93174 Revision: 04-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 9 Outline Dimensions Vishay Semiconductors DO-200AA DIMENSIONS in millimeters (inches) 3.5 (0.14) ± 0.1 (0.004) DIA. NOM. x 1.8 (0.07) deep MIN. both ends 19 (0.75) DIA. MAX. 2 places 0.3 (0.01) MIN. both ends 42 (1.65) DIA. MAX. 14.4 (0.57) 38 (1.50) DIA. MAX. Quote between upper and lower pole pieces has to be considered after application of mounting force (see Thermal and Mechanical Specifications) 13.7 (0.54) Document Number: 95248 Revision: 06-Nov-07 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000