SI1029X_10

Si1029X Vishay Siliconix Complementary N- and P-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 60 RDS(on) () 1.40 at VGS = 10 V 3 at VGS = 4.5 V 4 at VGS = - 10 V 8 at VGS = - 4.5 V ID (mA) 500 200 - 500 - 25 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Very Small Footprint • High-Side Switching • Low On-Resistance: N-Channel, 1.40  P-Channel, 4  • Low Threshold: ± 2 V (typ.) • Fast Switching Speed: 15 ns (typ.) • Gate-Source ESD Protected: 2000 V • Compliant to RoHS Directive 2002/95/EC P-Channel - 60 SC-89 S1 1 6 D1 Marking Code: H G1 2 5 G2 BENEFITS • • • • Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits D2 3 4 S2 Top View Ordering Information: Si1029X-T1-GE3 (Lead (Pb)-free and Halogen-free) APPLICATIONS • Replace Digital Transistor, Level-Shifter • Battery Operated Systems • Power Supply Converter Circuits ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) N-Channel Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Currentb Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25 °C TA = 85 °C TA = 25 °C TA = 85 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg ESD 450 280 145 320 230 650 380 250 130 - 55 to 150 2000 - 450 280 145 305 220 5s Steady State 60 ± 20 - 200 - 145 - 650 - 380 250 130 mW °C V - 190 - 135 mA 5s P-Channel Steady State - 60 Unit V Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) Notes: a. Surface mounted on FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 71435 S10-2432-Rev. C, 25-Oct-10 www.vishay.com 1 Si1029X Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage VDS VGS(th) VGS = 0 V, ID = 10 µA VGS = 0 V, ID = - 10 µA VDS = VGS, ID = 250 µA VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 5 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 10 V VDS = 50 V, VGS = 0 V VDS = - 50 V, VGS = 0 V VDS = 50 V, VGS = 0 V, TJ = 85 °C VDS = - 50 V, VGS = 0 V, TJ = 85 °C VDS = 10 V, VGS = 4.5 V VDS = - 10 V, VGS = - 4.5 V VDS = 7.5 V, VGS = - 4.5 V VDS = - 10 V, VGS = - 10 V VGS = 4.5 V, ID = 200 mA VGS = - 4.5 V, ID = - 25 mA VGS = 10 V, ID = 500 mA VGS = - 10 V, ID = - 500 mA VGS = 10 V, ID = 500 mA, TJ = 125 °C VGS = - 10 V, ID = - 500 mA, TJ = 125 °C VDS = 10 V, ID = 200 mA VDS = - 10 V, ID = - 100 mA IS = 200 mA, VGS = 0 V IS = - 200 mA, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 60 - 60 1 -1 Symbol Test Conditions Min. Typ. Max. Unit Zero Gate Voltage Drain Current IDSS 2.5 - 3.0 ± 50 ± 100 ± 150 ± 200 10 - 25 100 - 250 V nA On-State Drain Currenta ID(on) 500 - 50 800 - 600 3 8 1.40 4 2.50 6 200 100 1.4 - 1.4 750 1700 75 260 225 460 30 23 6 10 3 5 15 20 mA Drain-Source On-State Resistancea RDS(on)  Forward Transconductancea Diode Forward Voltagea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance gfs VSD ms V Qg Qgs Qgd Ciss Coss Crss tON N-Channel VDS = 10 V, VGS = 4.5 V, ID = 250 mA P-Channel VDS = - 30 V, VGS = - 15 V, ID = - 500 mA pC N-Channel VDS = 25 V, VGS = 0 V, f = 1 MHz P-Channel VDS = - 25 V, VGS = 0 V, f = 1 MHz N-Channel VDD = 30 V, RL = 150  ID  200 mA, VGEN = 10 V, Rg = 10  P-Channel VDD = - 25 V, RL = 150  ID  - 165 mA, VGEN = - 10 V, Rg = 10  pF Turn-On Timec ns 20 35 Turn-Off Timec tOFF Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71435 S10-2432-Rev. C, 25-Oct-10 Si1029X Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 1.0 6V VGS = 10 V thru 7 V 0.8 I D - Drain Current (A) 5V I D - Drain Current (mA) 900 25 °C 125 °C 600 TJ = - 55 °C 1200 0.6 4V 0.4 300 0.2 3V 0.0 0 1 2 3 4 5 0 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 4.0 3.5 R DS(on) - On-Resistance ( ) 40 3.0 2.5 2.0 1.5 1.0 10 0.5 0.0 0 200 400 600 800 1000 0 0 5 Crss VGS = 4.5 V VGS = 10 V C - Capacitance (pF) 30 50 Transfer Characteristics VGS = 0 V f = 1 MHz Ciss 20 Coss 10 15 20 25 I D - Drain Current (mA) V DS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 7 6 5 4 3 2 1 0 0.0 0.0 - 50 VDS = 10 V ID = 250 mA R DS(on) - On-Resistance 2.0 Capacitance VGS - Gate-to-Source Voltage (V) VGS = 10 V at 500 mA 1.6 (Normalized) 1.2 VGS = 4.5 V at 200 mA 0.8 0.4 0.1 0.2 0.3 0.4 0.5 0.6 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 71435 S10-2432-Rev. C, 25-Oct-10 www.vishay.com 3 Si1029X Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 1000 VGS = 0 V R DS(on) - On-Resistance ( ) 4 5 I S - Source Current (A) 100 TJ = 125 °C 3 2 ID = 200 mA ID = 500 mA 10 TJ = 25 °C 1 TJ = - 55 °C 1 0.00 0.3 0.6 0.9 1.2 1.5 0 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.4 On-Resistance vs. Gate-to-Source Voltage 0.2 ID = 250 µA V GS(th) Variance (V) 0.0 - 0.2 - 0.4 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Threshold Voltage Variance Over Temperature www.vishay.com 4 Document Number: 71435 S10-2432-Rev. C, 25-Oct-10 Si1029X Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 1.0 VGS = 10 V 7V 0.8 I D - Drain Current (A) 8V I D - Drain Current (mA) 900 25 °C 125 °C 600 6V 1200 TJ = - 55 °C 0.6 0.4 5V 0.2 4V 0.0 0 1 2 3 4 5 300 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 20 40 Transfer Characteristics VGS = 0 V R DS(on) - On-Resistance ( ) 16 VGS = 4.5 V C - Capacitance (pF) 32 Ciss 24 12 VGS = 5 V 8 VGS = 10 V 16 Coss 8 Crss 4 0 0 200 400 600 800 1000 0 0 5 10 15 20 25 I D - Drain Current (mA) V DS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 15 ID = 500 mA VGS - Gate-to-Source Voltage (V) 12 R DS(on) - On-Resistance VDS = 30 V VDS = 48 V 9 1.8 Capacitance 1.5 VGS = 10 V at 500 mA 1.2 (Normalized) VGS = 4.5 V at 25 mA 0.9 6 0.6 3 0.3 0 0.0 0.3 0.6 0.9 1.2 1.5 1.8 0.0 - 50 - 25 0 25 50 75 100 125 150 Q g - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 71435 S10-2432-Rev. C, 25-Oct-10 www.vishay.com 5 Si1029X Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 1000 VGS = 0 V R DS(on) - On-Resistance ( ) 8 ID = 500 mA 10 I S - Source Current (A) 100 TJ = 125 °C 6 4 ID = 200 mA 2 10 TJ = 25 °C TJ = - 55 °C 1 0.00 0.3 0.6 0.9 1.2 1.5 0 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.5 0.4 0.3 VGS(th) Variance (V) 0.2 0.1 0.0 - 0.1 - 0.2 - 0.3 - 50 On-Resistance vs. Gate-to-Source Voltage ID = 250 µA - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Threshold Voltage Variance Over Temperature www.vishay.com 6 Document Number: 71435 S10-2432-Rev. C, 25-Oct-10 Si1029X Vishay Siliconix N- OR P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 PDM t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 500 °C/W Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71435. Document Number: 71435 S10-2432-Rev. C, 25-Oct-10 www.vishay.com 7 Package Information Vishay Siliconix SC89: 6 LEADS (SOT 563F) 2 3 D E1/2 4 aaa C e1 A 2X 4 D B E/2 E 2 3 E1 2X aaa C 5 1 2 3 2X bbb C e B 4 6X b ccc M C A–B D A1 L1 L A A1 SEE DETAIL “A” MILLIMETERS Dim A A1 b c D E E1 e e1 L L1 Min 0.56 0.00 0.15 0.10 1.50 1.55 Max 0.60 0.10 0.30 0.18 1.70 1.70 NOTES: 1. 2. 2 Dimensions in millimeters. Dimension D does not include mold flash, protrusions or gate burrs. Mold flush, protrusions or gate burrs shall not exceed 0.15 mm per dimension E1 does not include interlead flash or protrusion, interlead flash or protrusion shall not exceed 0.15 mm per side. Dimensions D and E1 are determined at the outmost extremes of the plastic body exclusive of mold flash, the bar burrs, gate burrs and interlead flash, but including any mismatch between the top and the bottom of the plastic body. Datums A, B and D to be determined 0.10 mm from the lead tip. Terminal numbers are shown for reference only. These dimensions apply to the flat section of the lead between 0.08 mm and 0.15 mm from the lead tip. 3. 3 1.20 BSC 0.50 BSC 1.00 BSC 0.35 BSC 0.20 BSC 4 4. 5. 5 6. 6 ECN: E-00499—Rev. B, 02-Jul-01 DWG: 5880 Document Number: 71612 25-Jun-01 ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ DETAIL “A” ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ 6 5 4 SECTION B-B C 6 ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ Note Symbol aaa bbb ccc Tolerances Of Form And Position 0.10 0.10 0.10 2, 3 2, 3 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-89: 6-Lead 0.051 (1.300) (1.753) 0.012 (0.300) 0.051 (0.201) 0.020 (0.500) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index (0.798) 0.069 0.031 (0.478) 0.019 APPLICATION NOTE Document Number: 72605 Revision: 21-Jan-08 www.vishay.com 21 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1