SI3493DV-T1-E3

Si3493DV Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.027 @ VGS = −4.5 V −20 0.035 @ VGS = −2.5 V 0.048 @ VGS = −1.8 V FEATURES ID (A) −7 −6.2 −5.2 21 Qg (Typ) D TrenchFETr Power MOSFET: 1.8-V Rated D Ultra-Low On-Resistance APPLICATIONS D Load Switch D PA Switch D Battery Switch TSOP-6 Top View 1 3 mm 6 (3) G 2 5 (4) S 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET Ordering Information: Si3493DV-T1 Si3493DV-T1—E3 (Lead (Pb)-Free) Marking Code: 93xxx ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 secs Steady State −20 "8 Unit V −7 −3.6 −20 −1.7 2.0 1.0 −55 to 150 −5.3 −3.9 A −0.9 1.1 0.6 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71936 S-41796—Rev. C, 04-Oct-04 www.vishay.com t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 45 90 25 Maximum 62.5 110 30 Unit _C/W 1 Si3493DV Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) () gfs VSD VDS = VGS, ID = −250 mA VDS = 0 V, VGS = "8 V VDS = −20 V, VGS = 0 V VDS = −20 V, VGS = 0 V, TJ = 85_C VDS = −5 V, VGS = −4.5 V VGS = −4.5 V, ID = −7 A VGS = −2.5 V, ID = −6.2 A VGS = −1.8 V, ID = −3 A VDS = −5 V, ID = −7 A IS = −1.7 A, VGS = 0 V −20 0.022 0.029 0.039 25 −0.7 −1.2 0.027 0.035 0.048 S V W −0.40 −1 "100 −1 −5 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = −1.7 A, di/dt = 100 A/ms VDD = −10 V, RL = 10 W V, ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W VDS = −10 V, VGS = −4.5 V, ID = −7 A 21 2.6 6 20 40 125 85 64 30 60 190 130 90 ns 32 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 5 thru 2 V 20 Transfer Characteristics 16 I D − Drain Current (A) 16 I D − Drain Current (A) 12 1.5 V 8 12 8 TC = 125_C 4 25_C −55_C 4 1V 0 0 1 2 3 4 5 VDS − Drain-to-Source Voltage (V) 0 0.0 0.4 0.8 1.2 1.6 2.0 VGS − Gate-to-Source Voltage (V) Document Number: 71936 S-41796—Rev. C, 04-Oct-04 www.vishay.com 2 Si3493DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.10 r DS(on) − On-Resistance ( W ) 3000 2500 C − Capacitance (pF) 2000 1500 1000 500 Crss 0.00 0 4 8 12 16 20 0 0 4 8 12 16 20 Coss Ciss Capacitance 0.08 0.06 VGS = 1.8 V VGS = 2.5 V 0.04 0.02 VGS = 4.5 V ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) Gate Charge 5 V GS − Gate-to-Source Voltage (V) VDS = 10 V ID = 7 A 4 rDS(on) − On-Resiistance (Normalized) 1.4 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 7 A 3 1.2 2 1.0 1 0.8 0 0 4 8 12 16 20 24 Qg − Total Gate Charge (nC) 0.6 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage 20 0.10 On-Resistance vs. Gate-to-Source Voltage I S − Source Current (A) 10 r DS(on) − On-Resistance ( W ) 0.08 0.06 ID = 7 A TJ = 150_C TJ = 25_C 0.04 0.02 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) Document Number: 71936 S-41796—Rev. C, 04-Oct-04 www.vishay.com 3 Si3493DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.3 V GS(th) Variance (V) ID = 250 mA 0.2 0.1 0.0 −0.1 −0.2 −50 8 Power (W) 24 TA = 25_C 16 40 Single Pulse Power 32 −25 0 25 50 75 100 125 150 0 10−2 10−1 1 Time (sec) 10 100 600 TJ − Temperature (_C) 100 Safe Operating Area * rDS(on) Limited IDM Limited 10 I D − Drain Current (A) P(t) = 0.001 1 ID(on) Limited P(t) = 0.01 P(t) = 0.1 0.1 TC = 25_C Single Pulse BVDSS Limited 1 10 100 VDS − Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified P(t) = 1 P(t) = 10 dc 0.01 0.1 2 1 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 360_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 www.vishay.com 4 Document Number: 71936 S-41796—Rev. C, 04-Oct-04 Si3493DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71936. Document Number: 71936 S-41796—Rev. C, 04-Oct-04 www.vishay.com 5