SI3865BDV

Si3865BDV New Product Vishay Siliconix Load Switch with Level-Shift PRODUCT SUMMARY VDS2 (V) 1.8 to 8 rDS(on) (W) 0.060 @ VIN = 4.5 V 0.100 @ VIN = 2.5 V 0.175 @ VIN = 1.8 V ID (A) 2.9 2.2 1.7 1.8-V Rated D Low Profile, Small Footprint TSOP-6 Package D 3000-V ESD Protection On Input Switch, VON/OFF D Adjustable Slew-Rate FEATURES D 60-mW Low rDS(on) TrenchFETr D 1.8 to 8-V Input D 1.5 to 8-V Logic Level Control DESCRIPTION The Si3865BDV includes a p- and n-channel MOSFET in a single TSOP-6 package. The low on-resistance p-channel TrenchFETR is tailored for use as a load switch. The n-channel, with an external resistor, can be used as a level-shift to drive the p-channel load-switch. The n-channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5-V. The Si3865BDV operates on supply lines from 1.8 to 8-V, and can drive loads up to 2.9 A. APPLICATION CIRCUITS Si3865BDV 2, 3 VOUT Q2 6 6 C1 Time ( mS) 24 32 td(off) tf 40 Switching Variation R2 @ VIN = 2.5 V, R1 = 20 kW IL = 1 A VON/OFF = 3 V Ci = 10 mF Co = 1 mF 4 VIN R1 ON/OFF 5 Q1 Co LOAD 16 tr 8 td(on) Ci 1 R2 0 0 GND 2 4 R2 (kW) Note: For R2 switching variations with other VIN/R1 combinations See Typical Characteristics 6 8 R2 COMPONENTS R1 R2 C1 Pull-Up Resistor Optional Slew-Rate Control Optional Slew-Rate Control Typical 10 kW to 1 mW* Typical 0 to 100 kW* Typical 1000 pF The Si3865BDV is ideally suited for high-side load switching in portable applications. The integrated n-channel level-shift device saves space by reducing external components. The slew rate is set externally so that rise-times can be tailored to different load types. *Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on. Document Number: 72848 S-41170—Rev. B, 14-Jun-04 www.vishay.com 1 Si3865BDV Vishay Siliconix FUNCTIONAL BLOCK DIAGRAM Si3865BDV TSOP-6 Top View S2 6 5 R1, C1 6 ON/OFF 5 Q1 R1, C1 4 Q2 2, 3 D2 New Product R2 1 D2 2 D2 3 4 S2 ON/OFF Ordering Information: Si3865BDV-T1—E3 R2 1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Input Voltage ON/OFF Voltage Load Current Continuous Intrinsic Diode Conductiona Maximum Power Dissipationa Operating Junction and Storage Temperature Range ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500 W) Continuousa, b Pulsedb, c Symbol VIN VON/OFF IL IS PD TJ, Tstg ESD Limit 8 8 "2.9 "6 −1 0.83 −55 to 150 3 Unit V A W _C kV THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (continuous Maximum Junction-to-Foot (Q2) current)a Symbol RthJA RthJC Typical 125 40 Maximum 150 55 Unit _C/W SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter OFF Characteristics Reverse Leakage Current Diode Forward Voltage IFL VSD VIN = 8 V, VON/OFF = 0 V IS = −1 A −0.77 1 −1 mA V Symbol Test Condition Min Typ Max Unit ON Characteristics Input Voltage Range VIN VIN = 4.5 V On-Resistance (p-channel) @ 1 A (p ) rDS(on) VON/OFF = 1.5 V ID = 1 A VIN = 2.5 V VIN = 1.8 V 1 1 1.8 0.045 0.075 0.135 8 0.060 0.100 0.175 A W V On-State (p-channel) Drain-Current On State (p channel) Drain Current ID( ) D(on) VIN-OUT v 0.2 V, VIN = 5 V, VON/OFF = 1.5 V VIN-OUT v 0.3 V, VIN = 3 V, VON/OFF = 1.5 V Notes a. Surface Mounted on FR4 Board. b. VIN = 8 V, VON/OFF = 8 V, TA = 25_C. c. Pulse test: pulse width v300 ms, duty cycle v2%. www.vishay.com Document Number: 72848 S-41170—Rev. B, 14-Jun-04 2 Si3865BDV New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 6 5 I D − Drain Current (A) 4 3 2 1 0 0 1 2 3 4 5 VDS − Drain-to-Source Voltage (V) VGS = 5 thru 2 V 0.32 0.40 Vishay Siliconix VDROP vs. IL @ VIN = 4.5 V VON/OFF = 1.5 to 8 V V DROP (V) 0.24 TJ = 125_C 0.16 TJ = 25_C 1.5 V 0.08 0.00 0 1 2 3 IL − (A) 4 5 6 VDROP vs. IL @ VIN = 2.5 V 0.6 0.5 0.4 V DROP (V) 0.3 0.2 0.1 0.0 0 1 2 3 IL − (A) 4 5 6 TJ = 125_C TJ = 25_C VON/OFF = 1.5 to 8 V 0.8 1.0 VDROP vs. IL @ VIN = 1.8 V VON/OFF = 1.5 to 8 V V DROP (V) 0.6 TJ = 125_C 0.4 TJ = 25_C 0.2 0.0 0.0 0.5 1.0 1.5 2.0 IL − (A) 2.5 3.0 3.5 4.0 1.0 VDROP vs. VIN @ IL = 1 A IL = 1 A VON/OFF = 1.5 to 8 V rDS(on) − On-Resiistance (Normalized) 1.4 1.3 1.2 1.1 Normalized On-Resistance vs. Junction Temperature IL = 1 A VON/OFF = 1.5 to 8 V 0.8 V DROP (V) VIN = 5 V VIN = 1.8 V 0.6 0.4 TJ = 125_C 0.2 1.0 0.9 0.8 0.0 0 TJ = 25_C 1 2 3 4 VIN (V) 5 6 7 8 0.7 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) Document Number: 72848 S-41170—Rev. B, 14-Jun-04 www.vishay.com 3 Si3865BDV Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Input Voltage 0.5 IL = 1 A VON/OFF = 1.5 to 8 V rDS(on) − On-Resiistance (W) 0.4 I S − Source Current (A) TJ = 150_C 1 60 Source-Drain Diode Forward Voltage 0.3 TJ = 25_C 0.2 TJ = 125_C 0.1 TJ = 25_C 0.0 0 1 2 3 4 VIN (V) 5 6 7 8 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD − Source-to-Drain Voltage (V) 40 35 30 Time ( mS) 25 20 15 10 5 0 0 Switching Variation R2 @ VIN = 4.5 V, R1 = 20 kW 25 Switching Variation R2 @ VIN = 2.5 V, R1 = 20 kW td(off) tf td(off) Time ( mS) 20 tr tf td(on) 15 IL = 1 A VON/OFF = 3 V Ci = 10 mF Co = 1 mF tr td(on) 10 IL = 1 A VON/OFF = 3 V Ci = 10 mF Co = 1 mF 5 0 2 4 R2 (kW) 6 8 10 0 2 4 R2 (kW) 6 8 10 50 Switching Variation R2 @ VIN = 1.8 V, R1 = 20 kW IL = 1 A VON/OFF = 3 V Ci = 10 mF Co = 1 mF Time ( mS) 600 500 400 td(off) tf Switching Variation R2 @ VIN = 4.5 V, R1 = 300 kW 40 Time ( mS) 30 tf td(off) 10 tr td(on) 0 0 1 2 3 4 R2 (kW) 5 6 7 8 300 200 100 0 0 20 IL = 1 A VON/OFF = 3 V Ci = 10 mF Co = 1 mF tr td(on) 20 40 R2 (kW) 60 80 100 www.vishay.com 4 Document Number: 72848 S-41170—Rev. B, 14-Jun-04 Si3865BDV New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Switching Variation R2 @ VIN = 2.5 V, R1 = 300 kW tf td(off) IL = 1 A VON/OFF = 3 V Ci = 10 mF Co = 1 mF Time ( mS) Vishay Siliconix 400 350 300 Time ( mS) 250 200 150 100 50 0 0 350 300 250 200 150 100 Switching Variation R2 @ VIN = 1.8 V, R1 = 300 kW tr tf td(off) IL = 1 A VON/OFF = 3 V Ci = 10 mF Co = 1 mF tr td(on) td(on) 50 0 20 40 60 R2 (kW) 80 100 0 20 40 R2 (kW) 60 80 100 10 Safe Operating Area, Junction-to-Case 10 ms I D − Drain Current (A) 1 Limited by rDS(on) 0.1 TC = 25_C Single Pulse 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) 2 1 Normalized Effective Transient Thermal Impedance 100 ms 1s 10 s dc Normalized Thermal Transient Impedance, Junction-to-Ambient Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 Single Pulse PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 150_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted t1 t2 0.01 10−4 10−3 10−2 10−1 1 10 100 600 Square Wave Pulse Dureation (sec) Document Number: 72848 S-41170—Rev. B, 14-Jun-04 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1