SI3900DV-T1

Si3900DV Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 FEATURES ID (A) 2.4 1.8 rDS(on) (W) 0.125 @ VGS = 4.5 V 0.200 @ VGS = 2.5 V D TrenchFETr Power MOSFET Pb-free Available TSOP-6 Top View D1 G1 3 mm 1 6 5 D1 D2 S2 2 S1 G1 G2 G2 3 4 D2 S1 N-Channel MOSFET S2 N-Channel MOSFET 2.85 mm Ordering Information: Si3900DV-T1 Si3900DV-T1—E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 sec 20 Steady State "12 Unit V 2.4 1.7 8 1.05 1.15 0.59 −55 to 150 2.0 1.4 A 0.75 0.83 0.53 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71178 S-50329—Rev. C, 28-Feb-05 www.vishay.com t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 93 130 75 Maximum 110 150 90 Unit _C/W 1 Si3900DV Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "12 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 85_C VDS w 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 2.4 A VGS = 2.5 V, ID = 1.0 A VDS = 5 V, ID = 2.4 A IS = 1.05 A, VGS = 0 V 5 0.100 0.160 5 0.79 1.10 0.125 0.200 W S V 0.6 1.5 "100 1 10 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 3.0 A, di/dt = 100 A/ms VDD = 10 V, RL = 10 W V, ID ^ 1 A, VGEN = 4.5 V, RG = 6 W VDS = 10 V, VGS = 4.5 V, ID = 2.4 A 2.1 0.3 0.4 10 30 14 6 30 17 50 25 12 50 ns 4.0 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 10 VGS = 4.5 thru 3.5 V 8 I D − Drain Current (A) 3V I D − Drain Current (A) 8 25_C 6 125_C 10 TC = −55_C Transfer Characteristics 6 2.5 V 4 2V 1.5 V 0 0 1 2 3 4 5 VDS − Drain-to-Source Voltage (V) 4 2 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS − Gate-to-Source Voltage (V) Document Number: 71178 S-50329—Rev. C, 28-Feb-05 www.vishay.com 2 Si3900DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.5 On-Resistance vs. Drain Current 300 250 C − Capacitance (pF) 200 150 100 Capacitance r DS(on) − On-Resistance ( W ) 0.4 Ciss 0.3 VGS = 2.5 V VGS = 4.5 V 0.1 0.2 Coss 50 Crss 0 0.0 0 1 2 3 4 5 6 7 0 4 8 12 16 20 ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) 4.5 V GS − Gate-to-Source Voltage (V) VDS = 10 V ID = 2.4 A Gate Charge 1.8 1.6 rDS(on) − On-Resiistance (Normalized) 1.4 1.2 1.0 0.8 0.6 −50 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 2.4 A 3.6 2.7 1.8 0.9 0.0 0.0 0.5 1.0 1.5 2.0 2.5 −25 0 25 50 75 100 125 150 Qg − Total Gate Charge (nC) TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage 10 0.40 On-Resistance vs. Gate-to-Source Voltage ID = 2.4 A r DS(on)− On-Resistance ( W ) 0.32 I S − Source Current (A) ID = 1 A 1 TJ = 150_C 0.24 0.16 TJ = 25_C 0.08 0.1 0.00 0.3 0.6 0.9 1.2 1.5 VSD − Source-to-Drain Voltage (V) Document Number: 71178 S-50329—Rev. C, 28-Feb-05 0.00 0 1 2 3 4 5 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si3900DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 ID = 250 mA 0.2 V GS(th) Variance (V) 6 Power (W) 8 Single Pulse Power, Junction-to-Ambient −0.0 4 −0.2 2 −0.4 −0.6 −50 −25 0 25 50 75 100 125 150 0 0.01 0.1 Time (sec) 1 10 30 TJ − Temperature (_C) 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Normalized Thermal Transient Impedance, Junction-to-Ambient Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 130_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10−4 10−3 10−2 10−1 1 10 100 600 Square Wave Pulse Duration (sec) 2 1 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−2 10−1 1 10 Square Wave Pulse Duration (sec) Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71178. www.vishay.com Document Number: 71178 S-50329—Rev. C, 28-Feb-05 10−4 10−3 4 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1