SI3900DV

Si3900DV Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.125 @ VGS = 4.5 V 0.200 @ VGS = 2.5 V ID (A) 2.4 1.8 D1 D2 TSOP-6 Top View G1 1 6 D1 3 mm S2 2 5 S1 G1 G2 G2 3 4 D2 2.85 mm S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VDS VGS 5 sec 20 Steady State "12 Unit V 2.4 ID IDM IS PD TJ, Tstg 1.05 1.15 0.59 –55 to 150 1.7 8 2.0 1.4 A 0.75 0.83 0.53 W _C THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71178 S-03511—Rev. B, 16-Apr-01 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 93 130 75 Maximum 110 150 90 Unit _C/W 1 Si3900DV Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "12 V VDS = 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 85_C VDS w 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 2.4 A VGS = 2.5 V, ID = 1.0 A VDS = 5 V, ID = 2.4 A IS = 1.05 A, VGS = 0 V 5 0.100 0.160 5 0.79 1.10 0.125 0.200 W S V 0.6 "100 1 10 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 3.0 A, di/dt = 100 A/ms VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W VDS = 10 V, VGS = 4.5 V, ID = 2.4 A 2.1 0.3 0.4 10 30 14 6 30 17 50 25 12 50 ns 4.0 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 10 VGS = 4.5 thru 3.5 V 8 I D – Drain Current (A) 3V I D – Drain Current (A) 8 25_C 6 125_C 10 TC = –55_C Transfer Characteristics 6 2.5 V 4 4 2 2V 2 1.5 V 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS – Drain-to-Source Voltage (V) www.vishay.com VGS – Gate-to-Source Voltage (V) Document Number: 71178 S-03511—Rev. B, 16-Apr-01 2 Si3900DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.5 300 Capacitance r DS(on) – On-Resistance ( W ) 0.4 C – Capacitance (pF) 250 Ciss 200 0.3 VGS = 2.5 V 0.2 VGS = 4.5 V 0.1 150 100 Coss 50 Crss 0.0 0 1 2 3 4 5 6 7 0 0 4 8 12 16 20 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) Gate Charge 4.5 V GS – Gate-to-Source Voltage (V) VDS = 10 V ID = 2.4 A 1.8 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 2.4 A r DS(on) – On-Resistance (W ) (Normalized) 1.0 1.5 2.0 2.5 3.6 1.6 1.4 2.7 1.2 1.8 1.0 0.9 0.8 0.0 0.0 0.5 0.6 –50 –25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (_C) Source-Drain Diode Forward Voltage 10 0.40 On-Resistance vs. Gate-to-Source Voltage ID = 2.4 A r DS(on)– On-Resistance ( W ) 0.32 ID = 1 A 0.24 I S – Source Current (A) TJ = 150_C 1 0.16 TJ = 25_C 0.08 0.1 0.00 0.3 0.6 0.9 1.2 1.5 0.00 0 1 2 3 4 5 VSD – Source-to-Drain Voltage (V) Document Number: 71178 S-03511—Rev. B, 16-Apr-01 VGS – Gate-to-Source Voltage (V) www.vishay.com 3 Si3900DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 ID = 250 mA 0.2 V GS(th) Variance (V) 6 8 Single Pulse Power, Junction-to-Ambient –0.0 Power (W) 4 –0.2 2 –0.4 –0.6 –50 0 –25 0 25 50 75 100 125 150 0.01 0.1 Time (sec) 1 10 30 TJ – Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 130_C/W 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 100 600 Square Wave Pulse Duration (sec) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Foot 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 4 Document Number: 71178 S-03511—Rev. B, 16-Apr-01