SI4497DY

New Product Si4497DY Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES ID (A)d - 36 - 29 Qg (Typ.) 90 nC PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) 0.0033 at VGS = - 10 V 0.0046 at VGS = - 4.5 V • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Adaptor Switch • High Current Load Switch • Notebook 8 7 6 5 Top View Ordering Information: Si4497DY-T1-GE3 (Lead (Pb)-free and Halogen-free) D D D D G SO-8 S S S G 1 2 3 4 S D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS Limit - 30 ± 20 - 36 - 29 - 24.8a, b - 19.2a, b - 70 - 6.5 - 2.9a, b - 30 45 7.8 5.0 3.5a, b 2.2a, b - 55 to 150 Unit V Continuous Drain Current (TJ = 150 °C) ID Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy IDM IS IAS EAS A mJ Maximum Power Dissipation PD W Operating Junction and Storage Temperature Range TJ, Tstg °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, c Maximum Junction-to-Foot Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 80 °C/W. d. Based on TC = 25 °C. Document Number: 65748 S10-0639-Rev. A, 22-Mar-10 www.vishay.com 1 t ≤ 10 s Steady State Symbol RthJA RthJF Typical 29 13 Maximum 35 16 Unit °C/W New Product Si4497DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time IS ISM VSD trr Qrr ta tb IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C IS = - 3 A, VGS = 0 V - 0.70 31 23 13 18 TC = 25 °C - 36 - 70 - 1.2 60 45 A V ns nC ns VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf VDD = - 15 V, RL = 1.5 Ω ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω VDD = - 15 V, RL = 1.5 Ω ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω f = 1 MHz 0.5 VDS = - 15 V, VGS = - 10 V, ID = - 20 A VDS = - 15 V, VGS = - 4.5 V, ID = - 20 A VDS = - 15 V, VGS = 0 V, f = 1 MHz VGS = 0 V, ID = - 250 µA ID = - 250 µA VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 20 V VDS = - 30 V, VGS = 0 V VDS = - 30 V, VGS = 0 V, TJ = 55 °C VDS ≥ - 10 V, VGS = - 10 V VGS = - 10 V, ID = - 20 A VGS = - 4.5 V, ID = - 15 A VDS = - 10 V, ID = - 20 A - 30 0.0027 0.0038 75 9685 995 995 190 90 27.5 26.5 2.3 19 13 115 25 100 75 100 42 4.6 35 25 200 50 180 150 180 80 ns Ω 285 135 nC pF 0.0033 0.0046 - 1.0 - 30 - 26 5.5 - 2.5 ± 100 -1 -5 V mV/°C V nA µA A Ω S Symbol Test Conditions Min. Typ. Max. Unit Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 65748 S10-0639-Rev. A, 22-Mar-10 New Product Si4497DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 70 V GS = 10 V thru 4 V V GS = 3 V I D - Drain Current (A) 10 56 I D - Drain Current (A) 8 42 6 28 4 T C = 25 °C 2 T C = 125 °C T C = - 55 °C 0 1 2 3 4 5 14 0 0.0 0 0.5 1.0 1.5 2.0 2.5 V DS - Drain-to-Source Voltage (V) V GS - Gate-to-Source Voltage (V) Output Characteristics 0.0045 12 000 Transfer Characteristics Ciss R DS(on) - On-Resistance (Ω) 0.0040 V GS = 4.5 V C - Capacitance (pF) 9600 0.0035 7200 0.0030 V GS = 10 V 0.0025 4800 2400 Coss Crss 0.0020 0 16 32 48 64 80 0 0 6 12 18 24 30 ID - Drain Current (A) V DS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 10 ID = 20 A VGS - Gate-to-Source Voltage (V) 8 V DS = 15 V 6 V DS = 10 V V DS = 20 V 4 R DS(on) - On-Resistance 1.4 1.6 ID = 20 A Capacitance V GS = 10 V (Normalized) 1.2 V GS = 4.5 V 1.0 2 0.8 0 0 40 80 120 160 200 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) T J - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 65748 S10-0639-Rev. A, 22-Mar-10 www.vishay.com 3 New Product Si4497DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.020 ID = 20 A R DS(on) - On-Resistance (Ω) 10 I S - Source Current (A) 0.016 1 T J = 150 °C 0.012 T J = 25 °C 0.1 0.008 T J = 125 °C 0.004 T J = 25 °C 0.01 0.001 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 V SD - Source-to-Drain Voltage (V) V GS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.8 200 On-Resistance vs. Gate-to-Source Voltage 160 0.5 VGS(th) Variance (V) Power (W) ID = 250 μA ID = 5 mA 0.2 120 80 - 0.1 40 - 0.4 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 Time (s) 1 10 T J - Temperature (°C) Threshold Voltage 100 Limited by R DS(on)* Single Pulse Power, Junction-to-Ambient 1 ms 10 I D - Drain Current (A) 10 ms 1 100 ms 1s 0.1 TA = 25 °C Single Pulse 0.01 0.01 10 s DC BVDSS Limited 1 10 100 0.1 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified Safe Operating Area www.vishay.com 4 Document Number: 65748 S10-0639-Rev. A, 22-Mar-10 New Product Si4497DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 40 32 I D - Drain Current (A) 24 16 8 0 0 25 50 75 100 125 150 T C - Case Temperature (°C) Current Derating* 10 2.0 8 1.6 Power (W) 4 Power (W) 0 25 50 75 100 125 150 6 1.2 0.8 2 0.4 0 0.0 0 25 50 75 100 125 150 T C - Case Temperature (°C) TA - Ambient Temperature (°C) Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 65748 S10-0639-Rev. A, 22-Mar-10 www.vishay.com 5 New Product Si4497DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 80 °C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Notes: PDM 0.02 Single Pulse 0.01 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 0.01 10 -4 Single Pulse 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65748. www.vishay.com 6 Document Number: 65748 S10-0639-Rev. A, 22-Mar-10 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1