Si4497DY
www.vishay.com
Vishay Siliconix
P-Channel 30 V (D-S) MOSFET
FEATURES
SO-8 Single
D
8
D
7
D
6
D
5
• TrenchFET® power MOSFET
• 100% Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Top View
1
S
2
S
3
S
4
G
APPLICATIONS
• High current load switch
• Notebook
PRODUCT SUMMARY
VDS (V)
G
-30
RDS(on) max. () at VGS = -10 V
0.0033
RDS(on) max. () at VGS = -4.5 V
0.0046
Qg typ. (nC)
90
ID (A) d
-36
Configuration
S
• Adaptor switch
D
P-Channel MOSFET
Single
ORDERING INFORMATION
Package
SO-8
Lead (Pb)-free and halogen-free
Si4497DY-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
-30
Gate-source voltage
VGS
± 20
TC = 25 °C
Continuous drain current (TJ = 150 °C)
-29
ID
TA = 25 °C
-24.8 a, b
-19.2 a, b
TA = 70 °C
Avalanche current
Single-pulse avalanche energy
IDM
TC = 25 °C
-70
-2.9 a, b
IAS
L = 0.1 mH
-30
EAS
45
mJ
7.8
TC = 70 °C
5
PD
TA = 25 °C
3.5 a, b
W
2.2 a, b
TA = 70 °C
Operating junction and storage temperature range
A
-6.5
IS
TA = 25 °C
TC = 25 °C
Maximum power dissipation
V
-36
TC = 70 °C
Pulsed drain current
Continuous source-drain diode current
UNIT
TJ, Tstg
-55 to +150
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient a, c
Maximum junction-to-foot
SYMBOL
TYPICAL
MAXIMUM
t 10 s
RthJA
29
35
Steady state
RthJF
13
16
UNIT
°C/W
Notes
a. Surface mounted on 1" x 1" FR4 board
b. t = 10 s
c. Maximum under steady state conditions is 80 °C/W
d. Based on TC = 25 °C
S10-0639-Rev. A, 22-Mar-10
Document Number: 65748
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4497DY
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = -250 μA
-30
-
-
V
-
-26
-
-
5.5
-
-1
-
-2.5
V
nA
Static
Drain-source breakdown voltage
VDS temperature coefficient
VDS/TJ
ID = -250 μA
mV/°C
VGS(th) temperature coefficient
VGS(th)/TJ
Gate-source threshold voltage
VGS(th)
VDS = VGS, ID = -250 μA
IGSS
VDS = 0 V, VGS = ± 20 V
-
-
± 100
VDS = -30 V, VGS = 0 V
-
-
-1
VDS = -30 V, VGS = 0 V, TJ = 55 °C
-
-
-5
VDS -10 V, VGS = -10 V
-30
-
-
A
VGS = -10 V, ID = -20 A
-
0.0027
0.0033
VGS = -4.5 V, ID = -15 A
-
0.0038
0.0046
VDS = -10 V, ID = -20 A
-
75
-
-
9685
-
VDS = -15 V, VGS = 0 V, f = 1 MHz
-
995
-
-
995
-
Gate-source leakage
Zero gate voltage drain current
IDSS
On-state drain current a
ID(on)
Drain-source on-state resistance a
RDS(on)
Forward transconductance a
gfs
μA
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
Gate resistance
Rg
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDS = -15 V, VGS = -10 V, ID = -20 A
-
190
285
-
90
135
VDS = -15 V, VGS = -4.5 V, ID = -20 A
-
27.5
-
-
26.5
-
f = 1 MHz
0.5
2.3
4.6
-
19
35
VDD = -15 V, RL = 1.5
ID -10 A, VGEN = -10 V, Rg = 1
-
13
25
200
td(on)
tr
td(off)
-
115
tf
-
25
50
td(on)
-
100
180
-
75
150
-
100
180
-
42
80
tr
td(off)
VDD = -15 V, RL = 1.5
ID -10 A, VGEN = -4.5 V, Rg = 1
tf
pF
nC
ns
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
IS
Pulse diode forward current
ISM
Body diode voltage
VSD
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
Reverse recovery fall time
ta
Reverse recovery rise time
tb
TC = 25 °C
IS = -3 A, VGS = 0 V
IF = -10 A, di/dt = 100 A/μs,
TJ = 25 °C
-
-
-36
-
-
-70
-
-0.7
-1.2
V
-
31
60
ns
-
23
45
nC
-
13
-
-
18
-
A
ns
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2%
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S10-0639-Rev. A, 22-Mar-10
Document Number: 65748
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4497DY
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
70
10
V GS = 10 V thru 4 V
V GS = 3 V
8
I D - Drain Current (A)
I D - Drain Current (A)
56
42
28
6
4
T C = 25 °C
14
2
T C = 125 °C
0
0.0
T C = - 55 °C
0
0.5
1.0
1.5
2.0
2.5
0
1
2
3
4
V DS - Drain-to-Source Voltage (V)
V GS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.0045
5
12 000
9600
V GS = 4.5 V
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
Ciss
0.0040
0.0035
0.0030
V GS = 10 V
7200
4800
0.0025
2400
0.0020
0
Coss
Crss
0
16
32
48
64
80
0
12
18
24
ID - Drain Current (A)
V DS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
10
30
1.6
R DS(on) - On-Resistance (Normalized)
ID = 20 A
VGS - Gate-to-Source Voltage (V)
6
8
V DS = 15 V
6
V DS = 10 V
V DS = 20 V
4
2
0
0
40
80
120
Qg - Total Gate Charge (nC)
Gate Charge
S10-0639-Rev. A, 22-Mar-10
160
200
ID = 20 A
V GS = 10 V
1.4
1.2
V GS = 4.5 V
1.0
0.8
0.6
- 50
- 25
0
25
50
75
100
125
150
T J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 65748
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4497DY
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.020
10
0.016
1
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
ID = 20 A
T J = 150 °C
T J = 25 °C
0.1
0.01
0.012
0.008
T J = 125 °C
0.004
T J = 25 °C
0.001
0.0
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
2
Source-Drain Diode Forward Voltage
6
8
10
On-Resistance vs. Gate-to-Source Voltage
0.8
200
160
0.5
ID = 250 μA
120
Power (W)
VGS(th) Variance (V)
4
V GS - Gate-to-Source Voltage (V)
V SD - Source-to-Drain Voltage (V)
ID = 5 mA
0.2
80
- 0.1
40
- 0.4
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
1
10
Time (s)
T J - Temperature (°C)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by R DS(on)*
1 ms
I D - Drain Current (A)
10
10 ms
1
100 ms
1s
10 s
0.1
DC
TA = 25 °C
Single Pulse
0.01
0.01
0.1
BVDSS Limited
1
10
100
V DS - Drain-to-Source Voltage (V)
* V GS > minimum VGS at which RDS(on) is specified
Safe Operating Area
S10-0639-Rev. A, 22-Mar-10
Document Number: 65748
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4497DY
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
40
I D - Drain Current (A)
32
24
16
8
0
0
25
50
75
100
125
150
T C - Case Temperature (°C)
10
2.0
8
1.6
6
1.2
Power (W)
Power (W)
Current Derating a
4
0.8
0.4
2
0.0
0
0
25
50
75
100
125
T C - Case Temperature (°C)
Power Derating, Junction-to-Foot
150
0
25
50
75
100
125
150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
S10-0639-Rev. A, 22-Mar-10
Document Number: 65748
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4497DY
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 80 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
0.01
10 -3
4. Surface Mounted
Single Pulse
10 -2
10 -1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10 -4
Single Pulse
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for silicon
technology and package reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65748.
S10-0639-Rev. A, 22-Mar-10
Document Number: 65748
6
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
www.vishay.com
1
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
www.vishay.com
22
Document Number: 72606
Revision: 21-Jan-08
Legal Disclaimer Notice
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Vishay
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Revision: 01-Jan-2022
1
Document Number: 91000