SI4532DY

Si4532DY Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 RDS(ON) (W) 0.065 @ VGS = 10 V 0.095 @ VGS = 4.5 V P-Channel –30 0.085 @ VGS = –10 V 0.19 @ VGS = –4.5 V ID (A) "3.9 "3.1 "3.5 "2.5 D1 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View 8 7 6 5 D1 D1 D2 D2 G1 G2 S1 N-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)A Drain Current (T 150 Pulsed Drain Current Continuous Source Current (Diode Conduction)A Maximum Power DissipationA Power Dissi Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C SYMBOL VDS VGS ID IDM IS PD TJ, Tstg N CHANNEL 30 "20 "3.9 "3.1 "20 1.7 2.0 W 1.3 –55 to 150 _C P CHANNEL –30 "20 "3.5 "2.8 "20 –1.7 A V UNIT THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-AmbientA Notes A. Surface Mounted on FR4 Board, t v 10 sec. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70155. For SPICE model information via the Worldwide Web: http://www.siliconix.com/www/product/spice.htm Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-56944—Rev. D, 23-Nov-93 Siliconix was formerly a division of TEMIC Semiconductors SYMBOL RthJA N OR P CHANNEL 62.5 UNIT _C/W 3-1 Si4532DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) PARAMETER STATIC Gate Threshold Voltage Gate Threshold Voltage VGS(th) GS(th) VDS = VGS, ID = 250 mA VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V Zero Gate Voltage Drain Current Gate Voltage Drain Current IDSS VDS = –30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55_C VDS = –30 V, VGS = 0 V, TJ = 55_C On-State Drain CurrentB Drain Current ID(on) D(on) VDS w 5 V, VGS = 10 V VDS w –5 V, VGS = –10 V VGS = 10 V, ID = 3.9 A Drain-Source On-State ResistanceB On Resistance rDS(on) VGS = –10 V, ID = –2.5 A VGS = 4.5 V, ID = 3.1 A VGS = –4.5 V, ID = –1.8 A Forward TransconductanceB Transconductance gfs fs VDS = 15 V, ID = 3.9 A VDS = –15 V, ID = – 2.5 A IS = 1.7 A, VGS = 0 V IS = –1.7 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 15 A –15 0.043 0.066 0.075 0.125 7 S 5 0.8 –0.8 1.2 V –1.2 0.065 0.085 0.095 0.19 W 1.0 V –1.0 "100 "100 1 –1 25 –25 mA nA SYMBOL TEST CONDITION MIN TYP MAX UNIT Gate-Body Leakage Leakage IGSS Diode Forward VoltageB Forward Voltage DYNAMICA VSD N-Ch Total Gate Charge Total Gate Charge Qg N Channel N-Channel VDS = 10 V, VGS = 10 V, ID = 3.9 A P-Channel VDS = –10 V, VGS = –10 V, ID = –2.5 A 5 Gate-Drain Charge Charge Qgd gd P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Turn-On Delay Time Delay Time td(on) d(on) N-Channel VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 10 V, RG = 6 W P-Channel VDD = –10 V, RL = 10 W 10 ID ^ –1 A, VGEN = –10 V, RG = 6 W , , P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Fall Time Time Source-Drain Reverse Recovery Time tf IF = 1.7 A, di/dt = 100 A/ms IF = –1.7 A, di/dt = 100 A/ms P-Ch N-Ch P-Ch 9.8 8.7 2.1 15 15 nC Gate-Source Charge Charge Qgs 1.9 1.6 1.3 9 7 6 9 18 14 6 8 52 50 15 15 18 18 27 ns 27 15 15 80 80 Rise Time Time tr Turn-Off Delay Time Delay Time td(off) d(off) trr Notes A. Guaranteed by design, not subject to production testing. B. Pulse test; pulse width v 300 ms, duty cycle v 2%. Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-56944—Rev. D, 23-Nov-93 Siliconix was formerly a division of TEMIC Semiconductors 3-2 Si4532DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 10 thru 6 V 5V 16 I D – Drain Current (A) I D – Drain Current (A) 16 125_C 20 TC = –55_C 25_C N CHANNEL Transfer Characteristics 12 12 8 4V 8 4 3V 0 0 2 4 6 8 4 0 0 1 2 3 4 5 6 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) On Resistance vs. Drain Current 0.20 750 Capacitance r DS(on)– On-Resistance ( W ) 0.16 C – Capacitance (pF) VGS = 4.5 V 0.12 600 Ciss 450 0.08 VGS = 10 V 0.04 300 Coss 150 Crss 0 0 4 8 12 16 20 0 0 5 10 15 20 25 30 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) 10 VDS = 10 V ID = 3.9 A Gate Charge 2.0 On Resistance vs. Junction Temperature V GS – Gate-to-Source Voltage (V) r DS(on)– On-Resistance ( W ) (Normalized) 8 1.6 VGS = 10 V ID = 3.9 A 6 1.2 4 0.8 2 0 0 2 4 6 8 10 0.4 –50 –25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (_C) Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-56944—Rev. D, 23-Nov-93 Siliconix was formerly a division of TEMIC Semiconductors 3-3 Si4532DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source Drain Diode Forward Voltage 20 TJ = 150_C 10 TJ = 25_C r DS(on)– On-Resistance ( W ) 0.16 N CHANNEL On Resistance vs. Gate to Source Voltage 0.20 I S – Source Current (A) 0.12 ID = 3.9 A 0.08 0.04 0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 0 2 4 6 8 10 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) 0.4 0.2 –0.0 Threshold Voltage ID = 250 mA 30 Single Pulse Power 25 V GS(th) Variance (V) 20 –0.2 –0.4 –0.6 –0.8 –1.0 –50 Power (W) 15 10 5 –25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (sec) 10 30 TJ – Temperature (_C) Normalized Thermal Transient Impedance, Junction to Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 PDM t1 t2 1. Duty Cycle, D = t1 t2 0.02 2. Per Unit Base = RthJA = 62.5_C/W 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 30 Square Wave Pulse Duration (sec) Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-56944—Rev. D, 23-Nov-93 Siliconix was formerly a division of TEMIC Semiconductors 3-4 Si4532DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 10, 9, 8, 7, 6 V 16 I D – Drain Current (A) 5V 12 I D – Drain Current (A) 16 25_C 12 125_C 8 20 TC = –55_C P CHANNEL Transfer Characteristics 8 4V 4 3V 0 0 2 4 6 8 4 0 0 1 2 3 4 5 6 7 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) On Resistance vs. Drain Current 0.40 700 600 r DS(on)– On-Resistance ( W ) 0.32 C – Capacitance (pF) 500 400 300 Capacitance Ciss 0.24 VGS = 4.5 V 0.16 VGS = 10 V 0.08 Coss 200 100 Crss 0 0 3 6 9 12 15 0 0 6 12 18 24 30 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) 10 VDS = 10 V ID = 2.5 A V GS – Gate-to-Source Voltage (V) Gate Charge 2.0 1.8 r DS(on)– On-Resistance ( W ) (Normalized) 1.6 1.4 1.2 1.0 0.8 0.6 On Resistance vs. Junction Temperature VGS = 10 V ID = 2.5 A 8 6 4 2 0 0 2 4 6 8 10 0.4 –50 –25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (_C) Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-56944—Rev. D, 23-Nov-93 Siliconix was formerly a division of TEMIC Semiconductors 3-5 Si4532DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source Drain Diode Forward Voltage 20 P CHANNEL On Resistance vs. Gate to Source Voltage 0.5 I S – Source Current (A) 10 r DS(on)– On-Resistance ( W ) 0.4 0.3 ID = 2.5 A 0.2 TJ = 150_C TJ = 25_C 0.1 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0 2 4 6 8 10 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) 0.8 Threshold Voltage 30 Single Pulse Power 0.6 25 V GS(th) Variance (V) 0.4 Power (W) ID = 250 mA 0.2 20 15 0.0 10 –0.2 5 –0.4 –50 –25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (sec) 10 30 TJ – Temperature (_C) Normalized Thermal Transient Impedance, Junction to Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 62.5_C/W 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 30 Square Wave Pulse Duration (sec) Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-56944—Rev. D, 23-Nov-93 Siliconix was formerly a division of TEMIC Semiconductors 3-6 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. 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