SI4931DY-T1-E3

Si4931DY New Product Vishay Siliconix Dual P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.018 @ VGS = −4.5 V −12 0.022 @ VGS = −2.5 V 0.028 @ VGS = −1.8 V FEATURES ID (A) −8.9 −8.1 −3.6 D TrenchFETr Power MOSFET D Advanced High Cell Density Process APPLICATIONS D Load Switching S1 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View Ordering Information: Si4931DY—E3 Si4931DY-T1—E3 (with Tape and Reel) 8 7 6 5 D1 D1 D2 D2 G1 G2 D1 P-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs Steady State −12 "8 Unit V −8.9 −7.1 −30 −1.7 2.0 1.3 −55 to 150 −6.7 −5.4 A −0.9 1.1 0.7 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1 ” x 1” FR4 Board. Document Number: 72379 S-32411—Rev. B, 24-Nov-03 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 46 80 24 Maximum 62.5 110 32 Unit _C/W 1 Si4931DY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = −350 mA VDS = 0 V, VGS = "8 V VDS = −12 V, VGS = 0 V VDS = −12 V, VGS = 0 V, TJ = 55_C VDS = −5 V, VGS = −4.5 V VGS = −4.5 V, ID = −8.9 A Drain-Source On-State Resistancea rDS(on) VGS = −2.5 V, ID = −8.1 A VGS = −1.8 V, ID = −3.6 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = −6 V, ID = −8.9 A IS = −1.7 A, VGS = 0 V −30 0.0145 0.018 0.023 26 −0.7 −1.2 0.018 0.022 0.028 S V W −0.4 −1.0 "100 −1 −5 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = −1.7 A, di/dt = 100 A/ms VDD = −6 V, RL = 6 W V, ID ^ −1 A, VGEN = −4.5 V, RG = 6 W VDS = −6 V, VGS = −4.5 V, ID = −8.9 A 34.5 5.1 9.6 9 25 46 230 155 128 40 70 345 235 200 ns W 52 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 5 thru 2 V 24 I D − Drain Current (A) I D − Drain Current (A) 24 30 Transfer Characteristics 18 18 12 1.5 V 12 TC = 125_C 6 25_C 0 0.0 6 1V 0 0 1 2 3 4 5 VDS − Drain-to-Source Voltage (V) −55_C 1.0 1.5 2.0 2.5 0.5 VGS − Gate-to-Source Voltage (V) Document Number: 72379 S-32411—Rev. B, 24-Nov-03 www.vishay.com 2 Si4931DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.10 r DS(on) − On-Resistance ( W ) 5000 Vishay Siliconix Capacitance C − Capacitance (pF) 0.08 4000 Ciss 3000 0.06 0.04 VGS = 1.8 V VGS = 2.5 V VGS = 4.5 V 2000 Coss 1000 Crss 0.02 0.00 0 6 12 18 24 30 0 0 2 4 6 8 10 12 ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) Gate Charge 5 V GS − Gate-to-Source Voltage (V) VDS = 6 V ID = 8.9 A 4 1.4 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 8.9 A 1.2 3 r DS(on) − On-Resistance (W ) (Normalized) 1.0 2 1 0.8 0 0 10 20 30 40 Qg − Total Gate Charge (nC) 0.6 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage 30 0.10 On-Resistance vs. Gate-to-Source Voltage r DS(on) − On-Resistance ( W ) 0.08 ID = 8.9 A 0.06 ID = 3.6 A 0.04 I S − Source Current (A) 10 TJ = 150_C TJ = 25_C 0.02 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) Document Number: 72379 S-32411—Rev. B, 24-Nov-03 www.vishay.com 3 Si4931DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.3 V GS(th) Variance (V) ID = 350 mA 0.2 0.1 0.0 −0.1 −0.2 −50 6 Power (W) 18 30 Single Pulse Power 24 12 −25 0 25 50 75 100 125 150 0 10−2 10−1 1 Time (sec) 10 100 600 TJ − Temperature (_C) 100 Safe Operating Area, Junction-to-Ambient rDS(on) Limited IDM Limited 10 I D − Drain Current (A) P(t) = 0.001 P(t) = 0.01 1 ID(on) Limited P(t) = 0.1 P(t) = 1 0.1 TA = 25_C Single Pulse BVDSS Limited 1 10 P(t) = 10 dc 0.01 0.1 100 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 1 Square Wave Pulse Duration (sec) 10−1 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 80_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 www.vishay.com 4 Document Number: 72379 S-32411—Rev. B, 24-Nov-03 Si4931DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Vishay Siliconix Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72379 S-32411—Rev. B, 24-Nov-03 www.vishay.com 5