Si4936ADY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
30
FEATURES
ID (A)
5.9 4.9
rDS(on) (W)
0.036 @ VGS = 10 V 0.053 @ VGS = 4.5 V
D TrenchFETr Power MOSFET
D1
D1
D2
D2
SO-8
S1 G1 S2 G2 1 2 3 4 Top View S1 Ordering Information: Si4936ADY Si4936ADY-T1 (with Tape and Reel) N-Channel MOSFET S2 N-Channel MOSFET 8 7 6 5 D1 D1 D2 D2 G1 G2
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
10 secs
30 "20 5.9 4.7 "30 1.7 2.0 1.3
Steady State
Unit
V
4.4 3.6 A
0.9 1.1 0.7 - 55 to 150 W _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71132 S-31989—Rev. B, 13-Oct-03 www.vishay.com t v 10 sec Steady State Steady State
Symbol
RthJA RthJF
Typical
50 90 32
Maximum
62.5 110 40
Unit
_C/W
1
Si4936ADY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistance Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 5.9 A VGS = 4.5 V, ID = 4.9 A VDS = 15 V, ID = 5.9 A IS = 1.7 A, VGS = 0 V 30 0.032 0.042 15 0.8 1.2 0.036 0.053 1.0 "100 1 5 V nA mA A W S V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 1.7 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W V, ID ^ 1 A, VGEN = 10 V, RG = 6 W VDS = 15 V, VGS = 10 V, ID = 5.9 A 13 2.3 2.0 6 14 30 5 30 12 25 60 10 60 ns 20 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30 VGS = 10 thru 5 V 24 I D - Drain Current (A) 4V I D - Drain Current (A) 24 30 TC = - 55_C 25_C
Transfer Characteristics
18
18
125_C
12 3V
12
6
6
2V 0 0.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
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Document Number: 71132 S-31989—Rev. B, 13-Oct-03
Si4936ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.08 r DS(on) - On-Resistance ( W ) 1000
Capacitance
0.06 VGS = 4.5 V 0.04 VGS = 10 V
C - Capacitance (pF)
800
Ciss
600
400 Coss Crss
0.02
200
0.00 0 6 12 18 24 30
0 0 6 12 18 24 30
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
Gate Charge
10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 5.9 A 8 1.6
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 5.9 A 1.4
6
r DS(on) - On-Resistance (W ) (Normalized) 6 9 12 15
1.2
4
1.0
2
0.8
0 0 3 Qg - Total Gate Charge (nC)
0.6 - 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (_C)
Source-Drain Diode Forward Voltage
30 TJ = 150_C I S - Source Current (A) 10 0.08
On-Resistance vs. Gate-to-Source Voltage
r DS(on) - On-Resistance ( W )
ID = 5.9 A 0.06
0.04
TJ = 25_C
0.02
1 0.0
0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Document Number: 71132 S-31989—Rev. B, 13-Oct-03
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Si4936ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4 0.2 V GS(th) Variance (V) ID = 250 mA - 0.0 - 0.2 - 0.4 - 0.6 - 0.8 - 50 10 Power (W) 30 50
Single Pulse Power
40
20
- 25
0
25
50
75
100
125
150
0 10 -3
10 -2
10 -1
1
10
100
600
TJ - Temperature (_C)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec)
Notes: PDM t1 t2 1. Duty Cycle, D =
2. Per Unit Base = RthJA = 90_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted
t1 t2
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2 1
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02
Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10
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Document Number: 71132 S-31989—Rev. B, 13-Oct-03
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