SI5404DC

Si5404DC Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.030 @ VGS = 4.5 V 0.045 @ VGS = 2.5 V ID (A) 7.2 5.9 1206-8 ChipFETr 1 D D D D S D D G D G Marking Code AB XX Lot Traceability and Date Code Bottom View Part # Code S N-Channel MOSFET Ordering Information: Si5404DC-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 secs 20 "12 7.2 5.2 20 2.1 2.5 1.3 Steady State Unit V 5.2 3.8 A 1.1 1.3 0.7 - 55 to 150 260 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 40 80 15 Maximum 50 95 20 Unit _C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 71057 S-31989—Rev. C, 13-Oct-03 www.vishay.com 1 Si5404DC Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistance Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "12 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 85_C VDS w 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 5.2 A VGS = 2.5 V, ID = 4.3 A VDS = 10 V, ID = 5.2 A IS = 1.1 A, VGS = 0 V 20 0.025 0.038 20 0.8 1.2 0.030 0.045 0.6 "100 1 5 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 1.1 A, di/dt = 100 A/ms VDD = 10 V, RL = 10 W V, ID ^ 1 A, VGEN = 4.5 V, RG = 6 W VDS = 10 V, VGS = 4.5 V, ID = 5.2 A 12 2.4 3.2 20 40 40 15 30 30 60 60 23 60 ns 18 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 5 thru 3 V 16 I D - Drain Current (A) I D - Drain Current (A) 2.5 V 16 20 Transfer Characteristics 12 12 8 2V 4 1.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 8 TC = 125_C 4 25_C 0 0.0 - 55_C 1.5 2.0 2.5 3.0 0.5 1.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 71057 S-31989—Rev. C, 13-Oct-03 Si5404DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.06 r DS(on) - On-Resistance ( W ) 0.05 VGS = 2.5 V 0.04 0.03 0.02 0.01 0.00 0 4 8 12 16 20 C - Capacitance (pF) 1800 1500 1200 900 600 300 Crss 0 0 4 8 12 16 20 Coss Ciss Capacitance VGS = 4.5 V ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 6 V GS - Gate-to-Source Voltage (V) 5 4 3 2 1 0 0 3 6 9 12 15 Qg - Total Gate Charge (nC) VDS = 10 V ID = 5.2 A 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 5.2 A 1.4 r DS(on) - On-Resistance (W ) (Normalized) 1.2 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 20 TJ = 150_C I S - Source Current (A) 10 r DS(on) - On-Resistance ( W ) 0.06 0.05 On-Resistance vs. Gate-to-Source Voltage ID = 5.2 A 0.04 0.03 0.02 0.01 0.00 TJ = 25_C 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71057 S-31989—Rev. C, 13-Oct-03 www.vishay.com 3 Si5404DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 50 Single Pulse Power 0.2 V GS(th) Variance (V) 40 ID = 250 mA Power (W) 30 - 0.0 - 0.2 20 - 0.4 10 - 0.6 - 50 - 25 0 25 50 75 100 125 150 0 10 -3 10 -2 10 -1 1 10 100 600 TJ - Temperature (_C) Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 80_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 4 Document Number: 71057 S-31989—Rev. C, 13-Oct-03