SI5975DC-T1

Si5975DC Vishay Siliconix Dual P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.086 @ VGS = --4.5 V --12 0.127 @ VGS = --2.5 V 0.164 @ VGS = --1.8 V ID (A) --4.1 --3.4 --3.0 S1 S2 1206-8 ChipFETt 1 S1 D1 D1 D2 D2 G1 S2 G2 G1 G2 Marking Code DD XX Lot Traceability and Date Code Part # Code Bottom View D1 P-Channel MOSFET D2 P-Channel MOSFET Ordering Information: Si5975DC-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a on nuous ra urren Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipation Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 secs Steady State --12 8 Unit V --4.1 --3.0 --10 --1.8 2.1 1.1 --55 to 150 260 --3.1 --2.2 --0.9 1.1 0.6 W _C A THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) t ≤ 5 sec Steady State Steady State Symbol RthJA RthJF Typical 50 90 30 Maximum 60 110 40 Unit _C / C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 71320 S-21251—Rev. B, 05-Aug-02 www.vishay.com 2-1 Si5975DC Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS DSS ID(on) VDS = VGS, ID = --1 mA VDS = 0 V, VGS = 8 V VDS = --9.6 V, VGS = 0 V VDS = --9.6 V, VGS = 0 V, TJ = 85_C VDS  --5 V, VGS = --4.5 V VGS = --4.5 V, ID = --3.1 A Drain-Source On-State Resistancea rDS(on) DS(on) VGS = --2.5 V, ID = --2.5 A VGS = --1.8 V, ID = --1.0 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = --5 V, ID = --3.1 A IS = --0.9 A, VGS = 0 V --10 0.070 0.100 0.131 8 --0.8 --1.2 0.086 0.127 0.164 S V Ω --0.45 100 --1 --5 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = --0.9 A, di/dt = 100 A/ms VDD = -- 6 V, RL = 6 Ω --6 ID ≅ --1 A, VGEN = --4.5 V, RG = 6 Ω VDS = --6 V, VGS = --4.5 V, ID = --3.1 A 5.7 1.2 1.2 10 20 31 26 40 15 30 45 40 60 ns 9 nC Notes a. Pulse test; pulse width ≤ 300 ms, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 10 VGS = 5 thru 2.5 V 8 I D -- Drain Current (A) I D -- Drain Current (A) 2V 6 10 Transfer Characteristics TC = --55_C 8 25_C 6 125_C 4 4 1.5 V 2 1V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS -- Drain-to-Source Voltage (V) www.vishay.com VGS -- Gate-to-Source Voltage (V) Document Number: 71320 S-21251—Rev. B, 05-Aug-02 2-2 Si5975DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.30 r DS(on) -- On-Resistance ( Ω ) 0.25 C -- Capacitance (pF) 0.20 VGS = 1.8 V 0.15 VGS = 2.5 V 0.10 0.05 0.00 0 2 4 6 8 10 VGS = 4.5 V 200 Crss 0 0 3 6 9 12 1000 Capacitance 800 Ciss 600 400 Coss ID -- Drain Current (A) VDS -- Drain-to-Source Voltage (V) Gate Charge 5 V GS -- Gate-to-Source Voltage (V) VDS = 6 V ID = 3.1 A 4 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 3.1 A 1.4 3 r DS(on) -- On-Resistance (Ω ) (Normalized) 2 3 4 5 6 1.2 2 1.0 1 0.8 0 0 1 Qg -- Total Gate Charge (nC) 0.6 --50 --25 0 25 50 75 100 125 150 TJ -- Junction Temperature (_C) Source-Drain Diode Forward Voltage 20 0.25 On-Resistance vs. Gate-to-Source Voltage I S -- Source Current (A) 10 r DS(on) -- On-Resistance ( Ω ) 0.20 ID = 3.1 A TJ = 150_C 0.15 0.10 TJ = 25_C 0.05 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1 2 3 4 5 VSD -- Source-to-Drain Voltage (V) VGS -- Gate-to-Source Voltage (V) Document Number: 71320 S-21251—Rev. B, 05-Aug-02 www.vishay.com 2-3 Si5975DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.25 50 Single Pulse Power 0.15 V GS(th) Variance (V) Power (W) 40 ID = 1 mA 0.05 30 20 --0.05 10 --0.15 --50 --25 0 25 50 75 100 125 150 0 10 --4 10 --3 10 --2 10 --1 Time (sec) 1 10 100 600 TJ -- Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 90_C/W t1 t2 Single Pulse 0.01 10 --4 10 --3 10 --2 10 --1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 --4 10 --3 10 --2 10 --1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 2-4 Document Number: 71320 S-21251—Rev. B, 05-Aug-02