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SI9102DJ02-E3

SI9102DJ02-E3

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    SI9102DJ02-E3 - 3-W High-Voltage Switchmode Regulator - Vishay Siliconix

  • 数据手册
  • 价格&库存
SI9102DJ02-E3 数据手册
Si9102 Vishay Siliconix 3-W High-Voltage Switchmode Regulator FEATURES D 10- to 120-V Input Range D Current-Mode Control D On-chip 200-V, 7-W MOSFET Switch D SHUTDOWN and RESET D High Efficiency Operation (> 80%) D Internal Start-Up Circuit D Internal Oscillator (1 MHz) DESCRIPTION The Si9102 high-voltage switchmode regulator is a monolithic BiC/DMOS integrated circuit which contains most of the components necessary to implement a high-efficiency dc-to-dc converter up to 3 watts. It can either be operated from a low-voltage dc supply, or directly from a 10- to 120-V unregulated dc power source. This device may be used with an appropriate transformer to implement most single-ended isolated power converter topologies (i.e., flyback and forward). The Si9102 is available in both standard and lead (Pb)-free 14-pin plastic DIP and 20-pin PLCC packages which are specified to operate over the industrial temperature range of −40 _C to 85 _C. FUNCTIONAL BLOCK DIAGRAM FB 14 (20) COMP 13 (18) Error Amplifier DISCHARGE 9 (12) OSC IN 8 (11) OSC OUT 7 (10) OSC 2V − + + − 1.2 V C/L Comparator Clock (1/2 fOSC) Current-Mode Comparator R Q S 3 (5) 5 (8) DRAIN −VIN (BODY) VREF 10 (14) − + 4 V (1%) Ref Gen BIAS 1 (2) Current Sources VCC 6 (9) To Internal Circuits 4 (7) VCC Undervoltage Comparator Q R 11 (16) 12 (17) SOURCE +VIN 2 (3) 8.8 V − + 9.4 V − + S SHUTDOWN RESET Note: Figures in parenthesis represent pin numbers for 20-pin package. Document Number: 70001 S-42040—Rev. G, 15-Nov-04 www.vishay.com 1 Si9102 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Voltages Referenced to −VIN (VCC < +VIN + 0.3 V) VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 V +VIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120 V VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 V ID (Peak) (Note: 300 ms pulse, 2% duty cycle) . . . . . . . . . . . . . . . . . . . . . . 2 A ID (rms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 mA Logic Inputs (RESET, SHUTDOWN, OSC IN) . . . . . . −0.3 V to VCC + 0.3 V Linear Inputs (FEEDBACK, SOURCE) . . . . . . . . . . . . . . . . . . . −0.3 V to 7 V HV Pre-Regulator Input Current (continuous) . . . . . . . . . . . . . . . . . . . . . 3 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to 125_C Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40 to 85_C Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150_C Power Dissipation (Package)a 14-Pin Plastic DIP (J Suffix)b . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750 mW 20-Pin PLCC (N Suffix)c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1400 mW Thermal Impedance (QJA) 14-Pin Plastic DIP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 167_C/W 20-Pin PLCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90_C/W Notes a. Device mounted with all leads soldered or welded to PC board. b. Derate 6 mW/_C above 25_C c. Derate 11.2 mW/_C above 25_C Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. RECOMMENDED OPERATING RANGE Voltages Referenced to −VIN VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9.5 V to 13.5 V ROSC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 kW to 1 MW Linear Inputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to 7 V +VIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 V to 120 V fOSC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 kHz to 1 MHz Digital Inputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to VCC SPECIFICATIONSa Test Conditions Unless Otherwise Specified DISCHARGE = −VIN = 0 V VCC = 10 V, +VIN = 48 V RBIAS = 390 kW , ROSC = 330 kW Limits D Suffix −40 to 85_C Parameter Reference Output Voltage Output Impedancee Short Circuit Current Temperature Stabilitye Symbol Tempb Mind Typc Maxd Unit VR ZOUT ISREF TREF OSC IN = − VIN (OSC Disabled) RL = 10 MW Room Full Room 3.92 3.86 15 70 4.0 30 100 0.5 4.08 4.14 45 130 1.0 V kW mA mV/_C VREF = −VIN Room Full Oscillator Maximum Frequencye Initial Accuracy Voltage Stability Temperature Coefficiente fMAX fOSC Df/f TOSC ROSC = 0 ROSC = 330 kWg Room Room Room Room Full 1 80 160 3 100 200 10 200 120 240 15 500 MHz kHz % ppm/_C ROSC = 150 kWg Df/f = f(13.5 V) − f(9.5 V)/f(9.5 V) Error Amplifier Feedback Input Voltage Input BIAS Current Open Loop Voltage Gaine Unity Gain Bandwidthe Dynamic Output Output Current Input OFFSET Voltage www.vishay.com Impedancee VFB IFB AVOL BW ZOUT IOUT VOS Source (VFB = 3.4 V) OSC IN = − VIN (OSC Disabled) OSC IN = − VIN, VFB = 4 V, OSC IN = − VIN (OSC Disabled) FB Tied to COMP OSC IN = − VIN (OSC Disabled) Room Room Room Room Room Room Room 60 0.7 3.96 4.00 25 80 1 1000 −2.0 "15 2000 −1.4 "40 4.04 500 V nA dB MHz W mA mV 2 Document Number: 70001 S-42040—Rev. G, 15-Nov-04 Si9102 Vishay Siliconix SPECIFICATIONSa Test Conditions Unless Otherwise Specified DISCHARGE = −VIN = 0 V VCC = 10 V, +VIN = 48 V RBIAS = 390 kW , ROSC = 330 kW Sink (VFB = 4.5 V) 9.5 V v VCC v 13.5 V Limits D Suffix −40 to 85_C Parameter Error Amplifier Output Current Power Supply Rejection Symbol IOUT PSRR Tempb Room Room Mind 0.12 50 Typc 0.15 70 Maxd Unit mA dB Current Limit Threshold Voltage Delay to Outpute VSOURCE td RL = 100 W from DRAIN to VCC VFB = 0 V RL = 100 W from DRAIN to VCC VSOURCE = 1.5 V, See Figure 1 Room Room 1.0 1.2 100 1.4 200 V ns Pre-Regulator/Start-Up Input Voltage Input Leakage Current Pre-Regulator Start-Up Current VCC Pre-Regulator Turn-Off Threshold Voltage Undervoltage Lockout VREG, −VUVLO +VIN +IIN ISTART VREG VUVLO VDELTA IIN = 10 mA VCC w 10 V Pulse Width v 300 ms, VCC = 7 V IPRE-REGULATOR = 10 mA RL = 100 W from DRAIN to VCC See Detailed Description Room Room Room Room Room Room 8 7.8 7.0 0.3 15 9.4 8.8 0.6 9.7 9.2 V 120 10 V mA mA Supply Supply Current Bias Current ICC IBIAS Room Room 0.45 10 0.6 15 1.0 20 mA mA Logic SHUTDOWN Delaye SHUTDOWN Pulse Widthe tSD tSW tRW tLW VIL VIH IIH IIL VIN = 10 V VIN = 0 V See Figure 3 Figure VSOURCE = −VIN, See Figure 2 Room Room Room Room Room Room Room Room −35 8.0 1 −25 5 50 50 25 2.0 ns 50 100 RESET Pulse Widthe Latching Pulse Widthe SHUTDOWN and RESET Low Input Low Voltage Input High Voltage Input Current Input Voltage High Input Current Input Voltage Low V mA MOSFET Switch Breakdown Voltage Drain-Source On Resistancef Drain Off Leakage Current Drain Capacitance VBR(DSS) rDS(on) IDSS CDS IDRAIN = 100 mA IDRAIN = 100 mA VDRAIN = 100 V Full Room Room Room 5 35 200 220 7 10 V W mA pF Notes a. Refer to PROCESS OPTION FLOWCHART for additional information. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. Temperature coefficient of rDS(on) is 0.75% per _C, typical. g. CSTRAY Pin 8 = v 5 pF Document Number: 70001 S-42040—Rev. G, 15-Nov-04 www.vishay.com 3 Si9102 Vishay Siliconix TIMING WAVEFORMS 1.5 V − 50% SOURCE 0 VCC − DRAIN 0 tr v 10 ns td 10% VCC SHUTDOWN 0 VCC DRAIN 0 50% − − tSD tf v 10 ns 10% FIGURE 1. FIGURE 2. VCC SHUTDOWN 0 − tSW 50% tLW 50% 50% tRW 50% 50% tr, tf v 10 ns VCC RESET 0− FIGURE 3. TYPICAL CHARACTERISTICS 140 120 100 +V IN (V) 80 60 40 20 0 10 +VIN vs. +IIN at Start-Up VCC = −VIN Output Switching Frequency vs. Oscillator Resistance 1M f OUT (Hz) 15 +IIN (mA) 20 100 k 10 k 10 k 100 k rOSC − Oscillator Resistance (W) 1M FIGURE 4. FIGURE 5. www.vishay.com 4 Document Number: 70001 S-42040—Rev. G, 15-Nov-04 Si9102 Vishay Siliconix PIN CONFIGURATIONS PDIP-14 PIN DESCRIPTION 1 2 3 4 5 6 7 Top View 14 13 12 11 10 9 8 Pin Function BIAS +VIN DRAIN SOURCE −VIN VCC OSC OUT OSC IN DISCHARGE 14-Pin DIP 1 2 3 4 5 6 7 8 9 10 11 12 13 14 20-Pin PLCC* 2 3 5 7 8 9 10 11 12 14 16 17 18 20 PLCC-20 3 2 1 20 19 VREF SHUTDOWN 18 17 16 15 14 RESET COMP FB 4 5 6 7 8 9 10 11 12 13 Top View *Pins 1, 4, 6, 13, 15, and 19 = N/C ORDERING INFORMATION Standard Part Number Si9102DJ02 Si9102DN02 Lead (Pb)-Free Part Number Si9102DJ02—E3 Si9102N02—E3 Temperature Range −40 to 85 _C Package PDIP-14 PLCC-20 DETAILED DESCRIPTION Pre-Regulator/Start-Up Section Due to the low quiescent current requirement of the Si9102 control circuitry, bias power can be supplied from the unregulated input power source, from an external regulated low-voltage supply, or from an auxiliary “bootstrap” winding on the output inductor or transformer. When power is first applied during start-up, +VIN will draw a constant current. The magnitude of this current is determined by a high-voltage depletion MOSFET device which is connected between +VIN and VCC. This start-up circuitry provides initial power to the IC by charging an external bypass capacitance connected to the VCC pin. The constant current is Document Number: 70001 S-42040—Rev. G, 15-Nov-04 disabled when VCC exceeds 9.4 V. If VCC is not forced to exceed the 9.4-V threshold, then VCC will be regulated to a nominal value of 9.4 V by the pre-regulator circuit. As the supply voltage rises toward the normal operating conditions, an internal undervoltage (UV) lockout circuit keeps the output MOSFET disabled until VCC exceeds the undervoltage lockout threshold (typically 8.8-V). This guarantees that the control logic will be functioning properly and that sufficient gate drive voltage is available before the MOSFET turns on. The design of the IC is such that the undervoltage lockout threshold will not exceed the pre-regulator turn-off voltage. Power dissipation can be minimized by providing an external power source to VCC such that the constant current source is always disabled. www.vishay.com 5 Si9102 Vishay Siliconix Note: During start-up or when VCC drops below 9.4-V the start-up circuit is capable of sourcing up to 20 mA. This may lead to a high level of power dissipation in the IC (for a 48-V input, approximately 1 W). Excessive start-up time caused by external loading of the VCC supply can result in device damage. Figure 4 gives the typical pre-regulator current at start-up as a function of input voltage. DISCHARGE pin should be tied to −VIN for normal internal oscillator operation. A frequency divider in the logic section limits switch duty cycle to v 50% by locking the switching frequency to one half of the oscillator frequency. Remote synchronization can be accomplished by capacitive coupling of a synchronization pulse into the OSC IN terminal. For a 5-V pulse amplitude and 0.5-ms pulse width, typical values would be 100 pF in series with 3 kW to OSC IN. BIAS To properly set the bias for the Si9102, a 390-kW resistor should be tied from BIAS to −VIN. This determines the magnitude of bias current in all of the analog sections and the pull-up current for the SHUTDOWN and RESET pins. The current flowing in the bias resistor is nominally 15 mA. SHUTDOWN and RESET SHUTDOWN and RESET are intended for overriding the output MOSFET switch via external control logic. The two inputs are fed through a latch preceding the output switch. Depending on the logic state of RESET, SHUTDOWN can be either a latched or unlatched input. The output is off whenever SHUTDOWN is low. By simultaneously having SHUTDOWN and RESET low, the latch is set and SHUTDOWN has no effect until RESET goes high. The truth table for these inputs is given in Table 1. Both pins have internal current source pull-ups and should be left disconnected when not in use. An added feature of the current sources is the ability to connect a capacitor and an open-collector driver to the SHUTDOWN or RESET pins to provide variable shutdown time. Table 1. Truth Table for the SHUTDOWN and RESET Pins RESET H Reference Section The reference section of the Si9102 consists of a temperature compensated buried zener and trimmable divider network. The output of the reference section is connected internally to the non-inverting input of the error amplifier. Nominal reference output voltage is 4 V. The trimming procedure that is used on the Si9102 brings the output of the error amplifier (which is configured for unity gain during trimming) to within "1% of 4 V. This automatically compensates for the input offset voltage in the error amplifier. The output impedance of the reference section has been purposely made high so that a low impedance external voltage source can be used to override the internal voltage source, if desired, without otherwise altering the performance of the device. SHUTDOWN H H L Output Normal Operation Normal Operation (No Change) H L L Off (Not Latched) Off (Latched) Off (Latched, No Change) Error Amplifier Closed-loop regulation is provided by the error amplifier, which is intended for use with “around-the-amplifier” compensation. A MOS differential input stage provides for low input current. The noninverting input to the error amplifier (VREF) is internally connected to the output of the reference supply and should be bypassed with a small capacitor to ground. L Output Switch The output switch is a 7-W , 200-V lateral DMOS device. Like discrete MOSFETs, the switch contains an intrinsic body-drain diode. However, the body contact in the Si9102 is connected internally to −VIN and is independent of the SOURCE. Oscillator Section The oscillator consists of a ring of CMOS inverters, capacitors, and a capacitor discharge switch. Frequency is set by an external resistor between the OSC in and OSC out pins. (See Figure 5 for details of resistor value vs. frequency.) The www.vishay.com 6 Document Number: 70001 S-42040—Rev. G, 15-Nov-04 Si9102 Vishay Siliconix APPLICATIONS +VIN GND 100 mH 2 300 mH 1N5819 3 +5 V 20 mF 0.1 mF 220 mF 1 4 5 GND 7 1 2 390 kW 3 4 5 6 7 2W W 14 13 12 240 kW 0.022 mF 8 6 18 kW 0.1 mF 47 mF 1N5819 −5 V Si9102DJ 11 10 9 8 0.1 mF 0.1 mF 1/ 2 12 kW 1N4148 150 kW −VIN (−96 VDC) FIGURE 6. Flyback Converter for Double Battery Telecommunications Power Supplies Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?70001. Document Number: 70001 S-42040—Rev. G, 15-Nov-04 www.vishay.com 7
SI9102DJ02-E3 价格&库存

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