SIE862DF-T1-GE3

New Product SiE862DF Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY ID (A)a VDS (V) 30 RDS(on) (Ω)e 0.0032 at VGS = 10 V 0.0041 at VGS = 4.5 V Silicon Limit 134 119 Package Qg (Typ.) Limit 50 23 nC 50 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Gen III Power MOSFET • Ultra Low Thermal Resistance Using Top-Exposed PolarPAK® Package for Double-Sided Cooling • Leadframe-Based New Encapsulated Package - Die Not Exposed - Same Layout Regardless of Die Size ≤ 100 V • Low Qgd/Qgs Ratio Helps Prevent Shoot-Through • 100 % Rg and UIS Tested • Compliant to RoHS directive 2002/95/EC Package Drawing www.vishay.com/doc?68797 PolarPAK 10 D 9 G 8 S 7 S 6 D 6 7 8 9 10 APPLICATIONS • • • • VRM DC/DC Conversion Synchronous Rectification POL G D D D S G D D 1 G 2 S S 3 4 Top View D 5 5 4 3 2 1 S Bottom View N-Channel MOSFET For Related Documents www.vishay.com/ppg?65026 Top surface is connected to pins 1, 5, 6, and 10 Ordering Information: SiE862DF-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH ID Symbol VDS VGS Limit 30 ± 20 134 (Silicon Limit) 50a (Package Limit) 50a 30b, c 24b, c 100 50a 4.3b, c 40 80 104 66 5.2b, c 3.3b, c - 55 to 150 260 Unit V A Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy IDM IS IAS EAS mJ TC = 25 °C TC = 70 °C PD W Maximum Power Dissipation TA = 25 °C TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range °C d, e Soldering Recommendations (Peak Temperature) Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 65026 S09-1395-Rev. A, 20-Jul-09 www.vishay.com 1 New Product SiE862DF Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter t ≤ 10 s Maximum Junction-to-Ambienta, b Maximum Junction-to-Case (Drain Top) Steady State Maximum Junction-to-Case (Source)a, c Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 68 °C/W. c. Measured at source pin (on the side of the package). Symbol RthJA RthJC (Drain) RthJC (Source) Typical 20 1 2.8 Maximum 24 1.2 3.4 Unit °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss Qg VGS = 0 V, ID = 250 µA ID = 250 µA VDS = VGS , ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55 °C VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS = 4.5 V, ID = 20 A VDS = 10 V, ID = 20 A 1.2 30 31 -6 1.65 V mV/°C 2.2 ± 100 1 10 0.0032 0.0038 V nA µA A 0.0026 0.0034 90 3100 610 215 48 23 8 6.8 1.4 30 20 40 15 12 12 35 15 Ω S Symbol Test Conditions Min. Typ. Max. Unit 25 VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 10 V, ID = 20 A pF 75 35 VDS = 10 V, VGS = 4.5 V, ID = 20 A Qgs Gate-Source Charge Qgd Gate-Drain Charge Rg f = 1 MHz Gate Resistance td(on) Turn-On Delay Time VDD = 15 V, RL = 1.5 Ω tr Rise Time td(off) ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω Turn-Off Delay Time tf Fall Time td(on) Turn-On Delay Time VDD = 15 V, RL = 1.5 Ω tr Rise Time ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω td(off) Turn-Off Delay Time tf Fall Time Drain-Source Body Diode Characteristics TC = 25 °C IS Continuous Source-Drain Diode Current ISM Pulse Diode Forward Currenta IS = 1 0 A VSD Body Diode Voltage trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C ta Reverse Recovery Fall Time tb Reverse Recovery Rise Time Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. nC Ω 0.3 2.8 45 30 60 25 20 20 55 25 50 100 1.2 60 60 ns A V ns nC ns 0.8 40 40 21 19 Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 65026 S09-1395-Rev. A, 20-Jul-09 New Product SiE862DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 VGS = 10 V thru 4 V I D - Drain Current (A) 20 80 I D - Drain Current (A) 16 60 12 TC = - 55 °C 8 TC = 25 °C 4 TC = 125 °C 40 VGS = 3 V 20 VGS = 2 V 0.5 1.0 1.5 2.0 0 0.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.0040 4000 Transfer Characteristics R DS(on) - On-Resistance (Ω) 0.0035 C - Capacitance (pF) VGS = 4.5 V 0.0030 VGS = 10 V 0.0025 3200 Ciss 2400 1600 Coss 800 Crss 0.0020 0.0015 0 20 40 60 80 100 0 0 5 10 15 20 25 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 10 ID = 20 A VGS - Gate-to-Source Voltage (V) 8 VDS = 7.5 V 6 VDS = 15 V 4 VDS = 24 V 2 R DS(on) - On-Resistance 1.6 1.8 ID = 20 A Capacitance VGS = 10 V 1.4 (Normalized) VGS = 4.5 V 1.2 1.0 0.8 0 0 10 20 30 40 50 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 65026 S09-1395-Rev. A, 20-Jul-09 www.vishay.com 3 New Product SiE862DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.008 ID = 20 A R DS(on) - On-Resistance (Ω) I S - Source Current (A) 0.006 TJ = 125 °C 0.004 TJ = 25 °C 0.002 10 TJ = 150 °C TJ = 25 °C 1 0.0 0.2 0.4 0.6 0.8 1.0 0.000 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 2.2 2.0 40 50 On-Resistance vs. Gate-to-Source Voltage 1.8 Power (W) ID = 250 µA VGS(th) (V) 1.6 1.4 1.2 30 20 10 1.0 0.8 - 50 0 0.01 - 25 0 25 50 75 100 125 150 0.1 1 Time (s) 10 100 1000 TJ - Temperature (°C) Threshold Voltage 100 Limited by RDS(on)* 10 I D - Drain Current (A) Single Pulse Power, Junction-to-Ambient 1 ms 10 ms 1 100 ms 1s 10 s 0.1 DC 0.01 TA = 25 °C Single Pulse 0.001 0.01 0.1 1 BVDSS Limited 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 65026 S09-1395-Rev. A, 20-Jul-09 New Product SiE862DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 120 120 I D - Drain Current (A) Power Dissipation (W) 100 80 90 60 60 Package Limited 40 30 20 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating, Junction-to-Case * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 65026 S09-1395-Rev. A, 20-Jul-09 www.vishay.com 5 New Product SiE862DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) P DM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 55 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top) 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Source Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65026. www.vishay.com 6 Document Number: 65026 S09-1395-Rev. A, 20-Jul-09 Package Information Vishay Siliconix POLARPAK™ OPTION U M4 M1 M4 θ T5 T3 E1 E T4 T1 T2 View A M3 T3 M2 M3 T5 θ c (Top View) θ θ A D1 D DETAIL Z b5 b5 b5 0.254 K4 0.127 0.254 K2 K1 0.203 0.332 0.584 P1 A K4 b4 b3 View A (Bottom View) H3 b2 H2 b1 H1 K3 P1 A A1 H1 b1 K3 P1 P1 H4 b4 Document Number: 68797 Revision: 11-Aug-08 www.vishay.com 1 0.381 Package Information Vishay Siliconix MILLIMETERS DIM A A1 b1 b2 b3 b4 b5 c D D1 E E1 H1 H2 H3 H4 K1 K2 K3 K4 M1 M2 M3 M4 P1 T1 T2 T3 T4 T5 θ MIN. 0.75 0.00 0.48 0.41 2.19 0.89 0.23 0.20 6.00 5.74 5.01 4.75 0.23 0.45 0.31 0.45 4.22 1.62 1.16 0.24 4.30 3.43 0.22 0.05 0.15 3.48 0.56 1.20 3.90 0 0° NOM. 0.80 0.58 0.51 2.29 1.04 0.33 0.25 6.15 5.89 5.16 4.90 0.41 4.37 1.67 4.50 3.58 0.20 3.64 0.76 0.18 10° MAX. 0.85 0.05 0.68 0.61 2.39 1.19 0.43 0.30 6.30 6.04 5.31 5.05 0.56 0.51 0.56 4.52 1.72 4.70 3.73 0.25 4.10 0.95 0.36 12° MIN. 0.030 0.000 0.019 0.016 0.086 0.035 0.009 0.008 0.236 0.226 0.197 0.187 0.009 0.018 0.012 0.018 0.166 0.064 0.046 0.009 0.169 0.135 0.009 0.002 0.006 0.137 0.022 0.047 0.153 0.000 0° INCHES NOM. 0.031 0.023 0.020 0.090 0.041 0.013 0.010 0.242 0.232 0.203 0.193 0.016 0.172 0.066 0.177 0.141 0.008 0.143 0.030 0.007 10° MAX. 0.033 0.002 0.027 0.024 0.094 0.047 0.017 0.012 0.248 0.238 0.209 0.199 0.022 0.020 0.022 0.178 0.068 0.185 0.147 0.010 0.161 0.037 0.014 12° ECN: T-08441-Rev. A, 11-Aug-08 DWG: 5966 Notes Millimeters govern over inches. www.vishay.com 2 Document Number: 68797 Revision: 11-Aug-08 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PolarPAK® Option L and S 7.300 (0.287) 0.510 (0.020) 0.410 (0.016) 0.510 (0.020) 0.955 (0.038) 0.955 (0.038) 0.895 (0.035) 6.310 (0.248) 4.520 (0.178) + 0.895 (0.035) 0.580 (0.023) 0.510 (0.020) 2.290 (0.090) 0.580 (0.023) Recommended Minimum for PolarPAK Option L and S Dimensions in mm/(Inches) No External Traces within Broken Lines Dot indicates Gate Pin (Part Marking) APPLICATION NOTE Return to Index www.vishay.com 6 Document Number: 73491 Revision: 21-Jan-08 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1