SIHFR9310T-E3

IRFR9310, IRFU9310, SiHFR9310, SiHFU9310 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration - 400 VGS = - 10 V 13 3.2 5.0 Single 7.0 FEATURES • • • • • • • P-Channel Surface Mount (IRFR9310/SiHFR9310) Straight Lead (IRFU9310/SiHFU9310) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead (Pb)-free Available Available RoHS* COMPLIANT DESCRIPTION S D PAK (TO-252) IPAK (TO-251) G D P-Channel MOSFET Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. ORDERING INFORMATION Package Lead (Pb)-free SnPb DPAK (TO-252) IRFR9310PbF SiHFR9310-E3 IRFR9310 SiHFR9310 DPAK (TO-252) IRFR9310TRLPbFa SiHFR9310TL-E3a IRFR9310TRLa SiHFR9310TLa DPAK (TO-252) IRFR9310TRPbFa SiHFR9310T-E3a IRFR9310TRa SiHFR9310Ta DPAK (TO-252) IRFR9310TRRPbFa SiHFR9310TR-E3a IPAK (TO-251) IRFU9310PbF SiHFU9310-E3 IRFU9310 SiHFU9310 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) VGS at - 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM EAS IAR EAR PD dV/dt TJ, Tstg LIMIT - 400 ± 20 - 1.8 - 1.1 - 7.2 0.40 92 - 1.8 5.0 50 - 24 - 55 to + 150 300d UNIT V A W/°C mJ A mJ W V/ns °C TC = 25 °C for 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 57 mH, RG = 25 Ω, IAS = - 1.8 A (see fig. 12). c. ISD ≤ - 1.1 A, dI/dt ≤ 450 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91284 S-81378-Rev. A, 07-Jul-08 www.vishay.com 1 IRFR9310, IRFU9310, SiHFR9310, SiHFU9310 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient (PCB Mount)a Maximum Junction-to-Case (Drain) SYMBOL RthJA RthJA RthJC MIN. TYP. MAX. 110 50 2.5 °C/W UNIT Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time IS ISM VSD trr Qrr ton MOSFET symbol showing the integral reverse p - n junction diode D SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS ΔVDS/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf LD LS VGS = 0 V, ID = - 250 µA Reference to 25 °C, ID = - 1 mA VDS = VGS, ID = - 250 µA VGS = ± 20 V VDS = - 400 V, VGS = 0 V VDS = - 320 V, VGS = 0 V, TJ = 125 °C VGS = - 10 V ID = - 1.1 Ab VDS = - 50 V, ID = - 1.1 A - 400 - 2.0 0.91 - - 0.41 270 50 8.0 11 10 25 24 4.5 7.5 - 4.0 ± 100 - 100 - 500 7.0 13 3.2 5.0 - V V/°C V nA µA Ω S VGS = 0 V, VDS = - 25 V, f = 1.0 MHz, see fig. 5 ID = - 1.1 A, VDS = - 320 V, see fig. 6 and 13b pF VGS = - 10 V nC VDD = - 200 V, ID = - 1.1 A, RG = 21 Ω, RD = 180 Ω, see fig. 10b ns Between lead, 6 mm (0.25") from package and center of die contactc D - nH G - S - 170 640 - 1.9 A - 7.6 - 4.0 260 960 V ns nC G S TJ = 25 °C, IS = - 1.1 A, VGS = 0 Vb TJ = 25 °C, IF = -1.1 A, dI/dt = 100 A/µsb Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. c. This is applied for IPAK, LS of DPAK is measured between lead and center of die contact. www.vishay.com 2 Document Number: 91284 S-81378-Rev. A, 07-Jul-08 IRFR9310, IRFU9310, SiHFR9310, SiHFU9310 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V TOP 10 -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) TJ = 25 ° C TJ = 150 ° C 1 1 -4.5V 0.1 1 10 20μs PULSE WIDTH TJ = 25 °C 100 0.1 4 5 6 7 V DS = -50V 20μs PULSE WIDTH 8 9 10 -VDS , Drain-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics -VGS, Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics TOP RDS(on) , Drain-to-Source On Resistance (Normalized) 10 -I D , Drain-to-Source Current (A) VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V 2.5 ID = -1.8A 2.0 1.5 1 -4.5V 1.0 0.5 0.1 20μs PULSE WIDTH TJ = 150 °C 1 10 100 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 -VDS , Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics TJ , Junction Temperature ( °C) Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91284 S-81378-Rev. A, 07-Jul-08 www.vishay.com 3 IRFR9310, IRFU9310, SiHFR9310, SiHFU9310 Vishay Siliconix 500 400 300 Ciss -ISD , Reverse Drain Current (A) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 10 C, Capacitance (pF) TJ = 150 ° C 1 200 Coss 100 TJ = 25 ° C Crss 0 1 10 100 0.1 1.0 V GS = 0 V 2.0 3.0 4.0 5.0 -VDS , Drain-to-Source Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage -VSD ,Source-to-Drain Voltage (V) Fig. 7 - Typical Source-Drain Diode Forward Voltage 20 ID = -1.1A VDS = -320V VDS = -200V VDS = -80V 100 -VGS , Gate-to-Source Voltage (V) OPERATION IN THIS AREA LIMITED BY RDS(on) 16 -ID , Drain Current (A) I 10 10us 12 100us 1 1ms 8 4 0 0 4 8 FOR TEST CIRCUIT SEE FIGURE 13 12 16 0.1 TC = 25 °C TJ = 150 °C Single Pulse 10 100 10ms 1000 QG , Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage -VDS , Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area www.vishay.com 4 Document Number: 91284 S-81378-Rev. A, 07-Jul-08 IRFR9310, IRFU9310, SiHFR9310, SiHFU9310 Vishay Siliconix RD 2.0 VGS VDS D.U.T. + - 10 V VDD 1.6 RG -ID , Drain Current (A) 1.2 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 0.8 Fig. 10a - Switching Time Test Circuit 0.4 td(on) VGS 10 % tr td(off) tf 0.0 25 50 75 100 125 150 90 % VDS TC , Case Temperature ( °C) Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10b - Switching Time Waveforms 10 Thermal Response (Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91284 S-81378-Rev. A, 07-Jul-08 www.vishay.com 5 IRFR9310, IRFU9310, SiHFR9310, SiHFU9310 Vishay Siliconix VDS L IAS IAS - 20 V Driver 0.01 Ω tp 15 V Fig. 12a - Unclamped Inductive Test Circuit EAS , Single Pulse Avalanche Energy (mJ) 300 250 200 150 100 50 0 25 Fig. 12c - Maximum Avalanche Energy vs. Drain Current - 10 V QGS QG 12 V VG VGS - 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit www.vishay.com 6 Document Number: 91284 S-81378-Rev. A, 07-Jul-08 + D.U.T. - QGD + - RG D.U.T. VDD A tp VDS Fig. 12b - Unclamped Inductive Waveforms ID -0.49A -0.7A BOTTOM -1.1A TOP 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µF VDS IRFR9310, IRFU9310, SiHFR9310, SiHFU9310 Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + P.W. Period Ripple ≤ 5 % D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer RG Compliment N-Channel of D.U.T. for driver Driver gate drive D= D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current Body diode forward drop * VGS = - 5 V for logic level and - 3 V drive devices Fig. 14 - For P-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91284. Document Number: 91284 S-81378-Rev. A, 07-Jul-08 + + • dV/dt controlled by RG • ISD controlled by duty factor "D" • D.U.T. - device under test + - VDD P.W. Period VGS = - 10 V* VDD ISD www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1