SIZ710DT

New Product SiZ710DT Vishay Siliconix N-Channel 20 V (D-S) MOSFETs PRODUCT SUMMARY VDS (V) Channel-1 20 RDS(on) () 0.0068 at VGS = 10 V 0.009 at VGS = 4.5 V 0.0033 at VGS = 10 V 0.0043 at VGS = 4.5 V ID (A) 16a 16a 35a 35a Qg (Typ.) 6.9 nC FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC Channel-2 20 18.2 nC APPLICATIONS 6 x 3.7 GHS 1 2 VIN 3 VIN/D1 PowerPAIR® Pin 1 G1 1 2 D1 G2 6 S2 5 S2 4 S1/D2 6.00 mm 6 3 D1 D1 3.73 mm • Notebook System Power • POL • Synchronous Buck Converter VIN VIN GHS/G1 N-Channel 1 MOSFET VSW/S1/D2 GLS GND 5 GND 4 VSW GLS/G2 N-Channel 2 MOSFET GND/S2 Ordering Information: SiZ710DT-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Channel-1 20 ± 20 16 16a 16a, b, c 15b, c 70 16a 3.2 20 20 27 17 b, c a Channel-2 Unit V Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy 35 35a 30b, c 24b, c 100 35a 3.8b, c 30 45 48 31 4.6b, c 3b, c - 55 to 150 260 a A mJ Maximum Power Dissipation 3.9b, c 2.5b, c W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e °C THERMAL RESISTANCE RATINGS Channel-1 Parameter b, f Channel-2 Typ. 20 2 Max. 27 2.6 Unit Maximum Junction-to-Ambient °C/W Maximum Junction-to-Case (Drain) Steady State Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/ppg?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 67 °C/W for channel-1 and 65 °C/W for channel-2. Document Number: 65733 S10-2248-Rev. A, 04-Oct-10 www.vishay.com 1 t  10 s Symbol RthJA RthJC Typ. 24 3.5 Max. 32 4.6 New Product SiZ710DT Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate Source Leakage VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS VGS = 0 V, ID = 250 µA VGS = 0 V, ID = 250 µA ID = 250 µA ID = 250 µA ID = 250 µA ID = 250 µA VDS = VGS, ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 20 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55 °C VDS = 20 V, VGS = 0 V, TJ = 55 °C On-State Drain Currentb ID(on) VDS 5 V, VGS = 10 V VDS 5 V, VGS = 10 V VGS = 10 V, ID = 19 A Drain-Source On-State Resistanceb RDS(on) VGS = 10 V, ID = 20 A VGS = 4.5 V, ID = 16.5 A VGS = 4.5 V, ID = 20 A Forward Transconductanceb Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss Channel-2 VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 10 V, ID = 19 A Total Gate Charge Qg VDS = 10 V, VGS = 10 V, ID = 20 A Channel-1 VDS = 10 V, VGS = 4.5 V, ID = 16.8 A Gate-Source Charge Gate-Drain Charge Gate Resistance Qgs Qgd Rg Channel-2 VDS = 10 V, VGS = 4.5 V, ID = 20 A f = 1 MHz Ch-1 Channel-1 VDS = 10 V, VGS = 0 V, f = 1 MHz Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 0.3 0.2 820 2310 290 730 115 305 11.5 38 6.9 18.2 2.4 6.6 1.7 4.8 1.3 0.8 2.6 1.6  18 60 11 28 nC pF gfs VDS = 10 V, ID = 19 A VDS = 10 V, ID = 20 A Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 15 20 0.0055 0.0068 0.0027 0.0033 0.0072 45 85 0.009 0.0034 0.0043 S  1 1 20 20 19 20 - 4.8 - 5.3 2.2 2.2 ± 100 ± 100 1 1 5 5 A µA V nA mV/°C V Symbol Test Conditions Min. Typ. Max. Unit Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width  300 µs, duty cycle  2 %. www.vishay.com 2 Document Number: 65733 S10-2248-Rev. A, 04-Oct-10 New Product SiZ710DT Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Dynamica Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time IS ISM VSD trr Qrr ta tb Channel-1 IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C Channel-2 IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C IS = 10 A, VGS = 0 V IS = 10 A, VGS = 0 V TC = 25 °C Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 0.8 0.78 15 25 5.5 17 6 14 9 11 ns 16 35 70 100 1.2 1.2 30 50 11 35 V ns nC A td(on) tr td(off) tf td(on) tr td(off) tf Ch-1 Channel-1 VDD = 10 V, RL = 1  ID  10 A, VGEN = 4.5 V, Rg = 1  Channel-2 VDD = 10 V, RL = 1  ID  10 A, VGEN = 4.5 V, Rg = 1  Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Channel-1 VDD = 10 V, RL = 1  ID  10 A, VGEN = 10 V, Rg = 1  Channel-2 VDD = 10 V, RL = 1  ID  10 A, VGEN = 10 V, Rg = 1  Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 15 25 15 15 20 30 12 12 10 15 12 8 20 30 10 10 30 50 30 30 40 60 25 25 20 30 25 15 40 60 20 20 ns Symbol Test Conditions Min. Typ. Max. Unit Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width  300 µs, duty cycle  2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 65733 S10-2248-Rev. A, 04-Oct-10 www.vishay.com 3 New Product SiZ710DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 70 60 50 40 V GS = 3 V 30 20 10 V GS = 2 V 0 0.0 0.5 1.0 1.5 2.0 0 0.0 0.5 1.0 1.5 V GS = 10 V thru 4 V 16 I D - Drain Current (A) I D - Drain Current (A) 20 12 8 T C = 25 °C 4 T C = 125 °C T C = - 55 °C 2.0 2.5 V DS - Drain-to-Source Voltage (V) V GS - Gate-to-Source Voltage (V) Output Characteristics 0.012 1200 Transfer Characteristics 0.010 R DS(on) - On-Resistance (Ω) C - Capacitance (pF) 1000 Ciss 800 0.008 V GS = 4.5 V V GS = 10 V 0.006 600 0.004 400 Coss 0.002 200 Crss 0.000 0 10 20 30 40 50 60 70 0 0 5 10 15 20 ID - Drain Current (A) V DS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 10 ID = 16 A VGS - Gate-to-Source Voltage (V) 8 R DS(on) - On-Resistance V DS = 10 V V DS = 5 V 6 V DS = 16 V 4 1.4 1.6 ID = 19 A Capacitance V GS = 10 V, V GS = 4.5 V (Normalized) 1.2 1.0 2 0.8 0 0 3 6 9 12 15 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) T J - Junction Temperature (°C) Gate Charge www.vishay.com 4 On-Resistance vs. Junction Temperature Document Number: 65733 S10-2248-Rev. A, 04-Oct-10 New Product SiZ710DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.0200 ID = 19 A 0.0175 R DS(on) - On-Resistance (Ω) 0.0150 0.0125 0.0100 0.0075 T J = 25 °C 0.0050 0.0025 1 0.0 0.0000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 T J = 125 °C I S - Source Current (A) T J = 150 °C 10 T J = 25 °C V SD - Source-to-Drain Voltage (V) V GS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 2.0 50 On-Resistance vs. Gate-to-Source Voltage 1.8 40 1.6 VGS(th) (V) Power (W) 30 1.4 ID = 250 μA 1.2 20 1.0 10 0.8 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 Time (s) 10 100 1000 T J - Temperature (°C) Threshold Voltage 100 Limited by RDS(on) * 100 μs I D - Drain Current (A) 10 1 ms 10 ms 1 100 ms TA = 25 °C Single Pulse 0.1 BVDSS Limited 0.01 0.1 1s 10 s DC Single Pulse Power 1 10 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 65733 S10-2248-Rev. A, 04-Oct-10 www.vishay.com 5 New Product SiZ710DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 60 30 50 I D - Drain Current (A) 25 40 Power (W) Package Limited 20 30 15 20 10 10 5 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 T C - Case Temperature (°C) T C - Case Temperature (°C) Current Derating* Power, Junction-to-Case * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 65733 S10-2248-Rev. A, 04-Oct-10 New Product SiZ710DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 Notes: 2. Per Unit Base = R thJA = 67 °C/W 0.01 10 -4 Single Pulse 10 -3 10 -2 10 -1 1 10 3. T JM - T A = PDMZthJA(t) 4. Surface Mounted 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 10 -4 10 -3 Square Wave Pulse Duration (s) 10 -2 10 -1 Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 65733 S10-2248-Rev. A, 04-Oct-10 www.vishay.com 7 New Product SiZ710DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 V GS = 10 V thru 4 V 80 I D - Drain Current (A) I D - Drain Current (A) 16 20 60 V GS = 3 V 12 40 8 T C = 25 °C 4 T C = 125 °C 20 V GS = 2 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.0 T C = - 55 °C 0.5 1.0 1.5 2.0 2.5 3.0 V DS - Drain-to-Source Voltage (V) V GS - Gate-to-Source Voltage (V) Output Characteristics 0.005 3000 Transfer Characteristics R DS(on) - On-Resistance (Ω) 0.004 C - Capacitance (pF) V GS = 4.5 V 0.003 V GS = 10 V 2500 Ciss 2000 1500 0.002 1000 Coss 0.001 500 Crss 0.000 0 20 40 60 80 100 0 0 5 10 15 20 ID - Drain Current (A) V DS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 10 ID = 20 A VGS - Gate-to-Source Voltage (V) 8 V DS = 10 V R DS(on) - On-Resistance V DS = 5 V 6 V DS = 16 V 4 1.5 ID = 20 A 1.4 1.3 Capacitance V GS = 10 V, V GS = 4.5 V (Normalized) 1.2 1.1 1.0 0.9 0.8 2 0 0 8 16 24 32 40 0.7 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) T J - Junction Temperature (°C) Gate Charge www.vishay.com 8 On-Resistance vs. Junction Temperature Document Number: 65733 S10-2248-Rev. A, 04-Oct-10 New Product SiZ710DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.012 ID = 20 A 0.010 R DS(on) - On-Resistance (Ω) I S - Source Current (A) 0.008 T J = 150 °C 10 T J = 25 °C 0.006 T J = 125 °C 0.004 T J = 25 °C 0.002 1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 V SD - Source-to-Drain Voltage (V) V GS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 2.0 ID = 250 μA 1.8 40 50 On-Resistance vs. Gate-to-Source 1.6 VGS(th) (V) Power (W) 30 1.4 20 1.2 10 1.0 0.8 - 50 - 25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (s) 10 100 1000 T J - Temperature (°C) Threshold Voltage 100 Limited by R DS(on)* 100 μs Single Pulse Power 10 I D - Drain Current (A) 1 ms 10 ms 1 100 ms 1s 10 s 0.1 TA = 25 °C Single Pulse BVDSS Limited 0.01 0.01 0.1 1 10 DC 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 65733 S10-2248-Rev. A, 04-Oct-10 www.vishay.com 9 New Product SiZ710DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 120 50 100 I D - Drain Current (A) 40 80 Power (W) Package Limited 10 30 60 20 40 20 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 T C - Case Temperature (°C) T C - Case Temperature (°C) Current Derating* Power, Junction-to-Case * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 65733 S10-2248-Rev. A, 04-Oct-10 New Product SiZ710DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 PDM Notes: 0.05 t1 t2 1. Duty Cycle, D = t1 t2 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 2. Per Unit Base = R thJA = 65 °C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 10 -4 10 -3 Square Wave Pulse Duration (s) 10 -2 10 -1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65733. Document Number: 65733 S10-2248-Rev. A, 04-Oct-10 www.vishay.com 11 Package Information Vishay Siliconix PowerPAIRTM 6 x 3.7 CASE OUTLINE D Pin 6 Pin 5 Pin 4 L A K2 Pin 4 Pin 5 K2 Pin 6 0.10 C 2X D1 E1 E Pin #1 Ident (Optional) E2 Pin 1 b BACK SIDE VIEW D1 Pin 1 Pin 2 Pin 3 0.10 C 2X K1 Pin 3 e Pin 2 b1 0.10 C A A1 C Z c 0.08 C Z MILLIMETERS DIM. A A1 b b1 C D D1 E E1 E2 e K K1 K2 L 0.38 ECN: S-82772-Rev. B, 17-Nov-08 DWG: 5979 MIN. 0.70 0.00 0.46 0.20 0.18 3.65 2.41 5.92 2.62 0.87 NOM. 0.75 0.51 0.25 0.20 3.73 2.53 6.00 2.67 0.92 1.27 BSC 0.45 TYP. 0.66 TYP. 0.60 TYP. 0.43 0.48 0.015 MAX. 0.80 0.05 0.56 0.38 0.23 3.81 2.65 6.08 2.72 0.97 MIN. 0.028 0.000 0.018 0.008 0.007 0.144 0.095 0.233 0.103 0.034 INCHES NOM. 0.030 0.020 0.010 0.008 0.147 0.100 0.236 0.105 0.036 0.05 BSC 0.018 TYP. 0.026 TYP. 0.024 TYP. 0.017 0.019 MAX. 0.032 0.002 0.022 0.015 0.009 0.150 0.104 0.239 0.107 0.038 Document Number: 69028 17-Nov-08 K www.vishay.com 1 PAD Pattern Vishay Siliconix RECOMMENDED PAD FOR PowerPAIR™ 6 x 3.7 0.3520 (8.941) 0.0220 (0.559) 0.0190 (0.483) 0, 0.11 0.0170 (0.432) 0.1040 (2.642) 0.1070 (2.718) 0, 0.03 0, 0 0.0220 (0.559) 0.4390 (11.151) 0, - 0.0645 0.0170 (0.432) 0.0380 (0.965) - 0.05, - 0.11 0, - 0.11 0.0500 (1.27) 1 Recommended PAD for PowerPAIR 6 x 3.7 Dimensions in inches (mm) Keep-out 0.3520 (8.94) x 0.4390 (11.151) Document Number: 65278 Revision: 04-Aug-09 www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1