SM8S10AHE3-2D

New Product SM8S10 thru SM8S43A Vishay General Semiconductor Surface Mount PAR® Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 175 °C capability suitable for high reliability and automotive requirement • Available in uni-directional polarity only • Low leakage current • Low forward voltage drop • High surge capability • Meets ISO7637-2 surge specification (varied by test condition) • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC DO-218AB PRIMARY CHARACTERISTICS VWM PPPM (10 x 1000 μs) PPPM (10 x 10 000 μs) PD IFSM TJ max. 10 V to 43 V 6600 W 5200 W 8W 700 A 175 °C TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting, especially for automotive load dump protection application. MECHANICAL DATA Case: DO-218AB Molding compound meets UL 94 V-0 flammability rating Base P/NHE3 - RoHS compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 HE3 suffix meets JESD 201 class 2 whisker test Polarity: Heatsink is anode per MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER with 10/1000 μs waveform Peak pulse power dissipation with 10/10 000 μs waveform Power dissipation on infinite heatsink at TC = 25 °C (fig. 1) Peak pulse current with 10/1000 μs waveform Peak forward surge current 8.3 ms single half sine-wave Operating junction and storage temperature range Note (1) Non-repetitive current pulse derated above T = 25 °C A PPPM PD IPPM (1) SYMBOL VALUE 6600 UNIT W 5200 8.0 See next table 700 - 55 to + 175 W A A °C IFSM TJ, TSTG Document Number: 88387 Revision: 20-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 205 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SM8S10 thru SM8S43A Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) DEVICE TYPE BREAKDOWN VOLTAGE VBR (V) MIN. SM8S10 SM8S10A SM8S11 SM8S11A SM8S12 SM8S12A SM8S13 SM8S13A SM8S14 SM8S14A SM8S15 SM8S15A SM8S16 SM8S16A SM8S17 SM8S17A SM8S18 SM8S18A SM8S20 SM8S20A SM8S22 SM8S22A SM8S24 SM8S24A SM8S26 SM8S26A SM8S28 SM8S28A SM8S30 SM8S30A SM8S33 SM8S33A SM8S36 SM8S36A SM8S40 SM8S40A SM8S43 SM8S43A 11.1 11.1 12.2 12.2 13.3 13.3 14.4 14.4 15.6 15.6 16.7 16.7 17.8 17.8 18.9 18.9 20.0 20.0 22.2 22.2 24.4 24.4 26.7 26.7 28.9 28.9 31.1 31.1 33.3 33.3 36.7 36.7 40.0 40.0 44.4 44.4 47.8 47.8 MAX. 13.6 12.3 14.9 13.5 16.3 14.7 17.6 15.9 19.1 17.2 20.4 18.5 21.8 19.7 23.1 20.9 24.4 22.1 27.1 24.5 29.8 26.9 32.6 29.5 35.3 31.9 38.0 34.4 40.7 36.8 44.9 40.6 48.9 44.2 54.3 49.1 58.4 52.8 TEST CURRENT IT (mA) 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 STAND-OFF VOLTAGE VWM (V) 10.0 10.0 11.0 11.0 12.0 12.0 13.0 13.0 14.0 14.0 15.0 15.0 16.0 16.0 17.0 17.0 18.0 18.0 20.0 20.0 22.0 22.0 24.0 24.0 26.0 26.0 28.0 28.0 30.0 30.0 33.0 33.0 36.0 36.0 40 40 43 43 MAXIMUM REVERSE LEAKAGE AT VWM ID (μA) 15 15 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 MAXIMUM REVERSE LEAKAGE AT VWM TJ = 175 °C ID (μA) 250 250 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 MAXIMUM MAX. PEAK PULSE CURRENT CLAMPING VOLTAGE AT 10/1000 μs AT IPPM WAVEFORM (A) VC (V) 351 388 328 363 300 332 277 307 256 284 245 270 229 254 216 239 205 226 184 204 168 186 153 170 142 157 132 145 123 136 112 124 103 114 92.4 102 86 95.1 18.8 17.0 20.1 18.2 22.0 19.9 23.8 21.5 25.8 23.2 26.9 24.4 28.8 26.0 30.5 27.6 32.2 29.2 35.8 32.4 39.4 35.5 43.0 38.9 46.6 42.1 50.1 45.4 53.5 48.4 59.0 53.3 64.3 58.1 71.4 64.5 76.7 69.4 Note • For all types maximum VF = 1.8 V at IF = 100 A measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum www.vishay.com 206 For technical questions within your region, please contact one of the following: Document Number: 88387 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 20-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SM8S10 thru SM8S43A Vishay General Semiconductor THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance, junction to case SYMBOL RJC VALUE 0.90 UNIT °C/W ORDERING INFORMATION (Example) PREFERRED P/N SM8S10AHE3/2D (1) Note (1) AEC-Q101 qualified UNIT WEIGHT (g) 2.605 PREFERRED PACKAGE CODE 2D BASE QUANTITY 750 DELIVERY MODE 13" diameter plastic tape and reel, anode towards the sprocket hole RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 8.0 150 tr = 10 μs Peak Value IPPM 6.0 Input Peak Pulse Current (%) Power Dissipation (W) TJ = 25 °C Pulse Width (td) is Defined as the Point Where the Peak Current Decays to 50 % of IPPM 100 4.0 Half Value - IPP IPPM 2 50 2.0 td 0 0 50 100 150 200 0 0 10 20 30 40 Case Temperature (°C) t - Time (ms) Fig. 1 - Power Derating Curve Fig. 3 - Pulse Waveform 6000 10 000 4000 3000 2000 1000 1000 25 50 75 100 125 150 175 10 100 0 Case Temperature (°C) Reverse Surge Power (W) 5000 Load Dump Power (W) Pulse Width (ms) - ½ IPP Exponential Waveform Fig. 2 - Load Dump Power Characteristics (10 ms Exponential Waveform) Fig. 4 - Reverse Power Capability Document Number: 88387 Revision: 20-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 207 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SM8S10 thru SM8S43A Vishay General Semiconductor 100 100 000 Transient Thermal Impedance (°C/W) 10 RθJA 1 RθJC CJ - Junction Capacitance (pF) TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 10 000 Measured at Zero Bias 0.1 Measured at Stand-Off Voltage VWM 1000 10 15 20 25 30 35 40 45 0.01 0.01 0.1 1 10 100 t - Pulse Width (s) VWM - Reverse Stand-Off Voltage (V) Fig. 5 - Typical Transient Thermal Impedance Fig. 6 - Typical Junction Capacitance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-218AB 0.628 (16.0) 0.592 (15.0) 0.539 (13.7) 0.524 (13.3) 0.116 (3.0) 0.093 (2.4) 0.413 (10.5) 0.342 (8.7) 0.374 (9.5) 0.327 (8.3) Mounting Pad Layout 0.150 (3.8) 0.126 (3.2) 0.091 (2.3) 0.067 (1.7) 0.413 (10.5) 0.374 (9.5) 0.116 (3.0) 0.093 (2.4) 0.366 (9.3) 0.343 (8.7) 0.406 (10.3) 0.382 (9.7) 0.197 (5.0) 0.185 (4.7) 0.016 (0.4) MIN. Lead 2/Metal Heatsink Lead 1 0.366 (9.3) 0.343 (8.7) 0.606 (15.4) 0.583 (14.8) 0.138 (3.5) 0.098 (2.5) 0.028 (0.7) 0.020 (0.5) 0.098 (2.5) 0.059 (1.5) www.vishay.com 208 For technical questions within your region, please contact one of the following: Document Number: 88387 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 20-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1