TO-220AB

SUP/SUB85N10-10 Vishay Siliconix N-Channel 100-V (D-S) 175 °C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 100 rDS(on) (Ω) 0.0105 at VGS = 10 V 0.012 at VGS = 4.5 V ID (A) 85a FEATURES • TrenchFET® Power MOSFET • 175 °C Maximum Junction Temperature Available RoHS* COMPLIANT TO-220AB D TO-263 G DRAIN connected to TAB G GDS Top View SUP85N10-10 DS S N-Channel MOSFET Top View SUB85N10-10 ORDERING INFORMATION Package TO-220AB TO-263 Tin/Lead Plated SUP85N10-10 SUB85N10-10 Lead (Pb)-free SUP85N10-10-E3 SUB85N10-10-E3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Avalanche Current Single Pulse Avalanche Energyb TC = 25 °C TC = 125 °C L = 0.1 mH Symbol VDS VGS ID IDM IAS EAS PD TJ, Tstg Limit 100 ± 20 85a 60a 240 75 280 250c 3.75 - 55 to 175 Unit V A mJ W °C TC = 25 °C (TO-220AB and TO-263) Maximum Power Dissipationb TA = 25 °C (TO-263)d Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case Notes: a. Package limited. b. Duty cycle ≤ 1 %. c. See SOA curve fo voltage derating. d. When mounted on 1" square PCB (FR-4 material). * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 71141 S-61008–Rev. D, 12-Jun-06 www.vishay.com 1 PCB Mount (TO-263)d Free Air (TO-220AB) Symbol RthJA RthJC Limit 40 62.5 0.6 Unit °C/W SUP/SUB85N10-10 Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta V(BR)DSS VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 100 V, VGS = 0 V VDS = 100 V, VGS = 0 V, TJ = 125 °C VDS = 100 V, VGS = 0 V, TJ = 175 °C VDS = ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 30 A VGS = 4.5 V, ID = 20 A VGS = 10 V, ID = 30 A, TJ = 125 °C VGS = 10 V, ID = 30 A, TJ = 175 °C Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off DelayTimec Fall Timec gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 50 V, RL = 0.6 Ω ID ≅ 85 A, VGEN = 10 V, Rg = 2.5 Ω VDS = 50 V, VGS = 10 V, ID = 85 A VGS = 0 V, VDS = 25 V, f = 1 MHz VDS = 15 V, ID = 30 A 25 6550 665 265 105 17 23 12 90 55 130 25 135 85 195 85 240 IF = 85 A, VGS = 0 V IF = 50 A, di/dt = 100 A/µs 1.0 85 4.5 0.17 1.5 140 7 0.35 ns 160 nC pF 120 0.0085 0.010 0.0105 0.0012 0.017 0.022 S Ω 100 1 3 ± 100 1 50 250 A µA V nA Symbol Test Conditions Min Typ Max Unit Drain-Source On-State Resistancea rDS(on) Source-Drain Diode Ratings and Characteristics (TC = 25 °C)b IS Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge ISM VSD trr IRM(REC) Qrr A V ns A µC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71141 S-61008–Rev. D, 12-Jun-06 SUP/SUB85N10-10 Vishay Siliconix TYPICAL CHARACTERISTICS 250 VGS = 10 thru 6 V 200 I D − Drain Current (A) 5V I D − Drain Current (A) 150 TA = 25 °C, unless otherwise noted 200 150 100 100 50 4V 50 TC = 125 °C 25 °C 3V 0 0 2 4 6 8 10 0 0 1 2 3 4 - 55 °C 5 6 VDS − Drain-to-Source Voltage (V) VGS− Gate-to-Source Voltage (V) Output Characteristics 250 TC = - 55 °C r DS(on) − On-Resistance (Ω) 200 g fs − Transconductance (S) 25 °C 150 125 °C 100 0.015 0.020 Transfer Characteristics VGS = 4.5 V 0.010 VGS = 10 V 0.005 50 0 0 20 40 60 80 100 0.000 0 20 40 60 80 100 120 ID − Drain Current (A) ID − Drain Current (A) Transconductance 10000 20 On-Resistance vs. Drain Current 8000 C − Capacitance (pF) Ciss 6000 V GS − Gate-to-Source Voltage (V) 16 VDS = 50 V ID = 85 A 12 4000 8 2000 Crss 4 Coss 0 0 15 30 45 60 75 0 0 50 100 150 200 VDS − Drain-to-Source Voltage (V) Qg − Total Gate Charge (nC) Capacitance Gate Charge Document Number: 71141 S-61008–Rev. D, 12-Jun-06 www.vishay.com 3 SUP/SUB85N10-10 Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 2.5 VGS = 10 V ID = 30 A 2.0 rDS(on) − On-Resistance (Normalized) I S − Source Current (A) 100 1.5 TJ = 150 °C 10 TJ = 25 °C 1.0 0.5 0.0 - 50 - 25 0 25 50 75 100 125 150 175 1 0 0.3 0.6 0.9 1.2 TJ − Junction Temperature (°C) VSD− Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature 1000 140 Source-Drain Diode Forward Voltage 130 100 IAV (A) at T A = 25 °C I Dav (a) 10 IAV (A) at T A = 150 °C 1 V BR)DSS (V) ( 120 ID = 250 µA 110 100 0.1 0.00001 0.0001 0.001 0.01 0.1 1 90 - 50 - 25 0 25 50 75 100 125 150 175 tin (Sec) TJ − Junction Temperature (°C) Avalanche Current vs. Time TJ - Drain-Source Breakdown vs. Junction-Temperature www.vishay.com 4 Document Number: 71141 S-61008–Rev. D, 12-Jun-06 SUP/SUB85N10-10 Vishay Siliconix THERMAL RATINGS 100 1000 80 I D − Drain Current (A) I D − Drain Current (A) 10 µs 100 100 µs 10 *Limited by rDS(on) 60 1 ms 10 ms 100 ms dc 40 20 1 TC = 25 °C Single Pulse 0 0 25 50 75 100 125 150 175 0.1 0.1 100 1 10 1000 VDS − Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified *VGS TC − Ambient Temperature (°C) Maximum Avalanche and Drain Current vs. Case Temterature 2 1 Normalized Effective Transient Thermal Impedance Safe Operating Area Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71141. Document Number: 71141 S-61008–Rev. D, 12-Jun-06 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1