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TSKS5400S

TSKS5400S

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    TSKS5400S - GaAs Infrared Emitting Diode in Side View Package - Vishay Siliconix

  • 数据手册
  • 价格&库存
TSKS5400S 数据手册
TSKS5400S Vishay Semiconductors GaAs Infrared Emitting Diode in Side View Package Description TSKS5400S is a standard GaAs infrared emitting diode in a flat sideview, molded plastic package. A small recessed spherical lens provides an improved radiant intensity in a low profile package. The device diode is package compatible to TEKT5400S, phototransistor and to TEKS5400 photodetector, allowing the user to assemble his own optical sensor. 14 354 Features D Side view package with spherical lens D Radiation direction perpendicular to mounting direction D Angle of half sensitivity ϕ = ± 30° D Peak wavelength λP = 950 nm D Package compatible to TEKT5400S Order Instruction Ordering Code TSKS5400S TSKS5400S–ASZ Remarks 2000 pcs in Plastic Bags 2.54 mm Pin distance (lead to lead), height of taping 16 mm Absolute Maximum Ratings Tamb = 25°C Parameter Reverse voltage Forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ ambient t x 5 s, 2 mm from body tp x 100 µs Test Conditions Symbol VR IF IFSM PV Tj Tstg Tstg Tsd RthJA Value 6 100 2 170 100 –25...+85 –40...+100 260 450 Unit V mA A mW °C °C °C °C k/W Document Number 81074 Rev. 1, 30–Apr–02 www.vishay.com 1 (6) TSKS5400S Vishay Semiconductors Basic Characteristics Tamb = 25°C Parameter Forward voltage Reverse voltage Junction capacitance Radiant intensity Radiant power Temp. coefficient of φe Angle of half sensitivity Peak wavelength Spectral bandwidth Rise time Fall time Test Conditions IF = 100 mA, tp x 20 ms IR = 10 µA VR =0 V, f = 1 MHz, E = 0 IF = 50 mA, tp x 20 ms IF = 50 mA, tp x 20 ms IF = 50 mA IF = 50 mA IF = 50 mA IF = 1 A, tp/T = 0.01, tp x 10 µs IF = 1 A, tp/T = 0.01, tp x 10 µs Symbol VF VVR Cj Ie φe TKφe ϕ λp ∆λ tr tf Min. 6 50 2 10 –1.0 ±30 950 50 400 450 7 Typ. 1.3 Max. 1.7 Unit V V pF mW/ sr mW %K ° nm nm ns ns Typical Characteristics (Tamb = 25_C, unless otherwise specified) 200 P V – Power Dissipation ( mW ) IF – Forward Current ( mA ) 104 103 102 101 100 10–1 0 14846 150 RthJA 100 50 0 20 40 60 80 Tamb – Ambient Temperature ( °C ) 100 0 94 7996 e 1 2 3 4 VF – Forward Voltage ( V ) Figure 1. Power Dissipation vs. Ambient Temperature 125 I F – Forward Current ( mA ) 100 75 50 25 0 0 14847 Figure 3. Forward Current vs. Forward Voltage 1.5 V F –Forward Voltage ( V ) 1.4 1.3 1.2 1.1 1.0 0.9 0.8 –45 –30 –15 0 15 30 45 60 75 90 Tamb – Ambient Temperature ( °C ) IF = 10 mA RthJA 20 40 60 80 Tamb – Ambient Temperature ( °C ) 100 14347 Figure 2. Forward Current vs. Ambient Temperature Figure 4. Forward Voltage vs. Ambient Temperature www.vishay.com 2 (6) Document Number 81074 Rev. 1, 30–Apr–02 TSKS5400S Vishay Semiconductors 100 I e – Radiant Intensity ( mW/sr ) Fe rel – Relative Radiant Power 1.25 1.0 10 0.75 0.5 1 tp/T = 0.001 tp = 100 ms 0.1 0.25 IF = 100 mA 0 900 0.01 100 94 7913 e 101 102 103 IF – Forward Current ( mA ) 104 94 7994 e 950 l – Wavelength ( nm ) 0° 1000 Figure 5. Radiant Intensity vs. Forward Current Figure 8. Relative Radiant Power vs. Wavelength 10 ° 20 ° 30° 100.0 Fe – Radiant Power ( mW ) I e rel – Relative Radiant Intensity 40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 0.6 0.4 0.2 0 0.2 0.4 0.6 10.0 1.0 0.1 1 13718 10 100 1000 IF – Forward Current ( mA ) 14349 Figure 6. Radiant Power vs. Forward Current 1.6 1.4 1.2 I e rel ; Fe rel 1.0 0.8 0.6 0.4 0.2 0.0 –45 –30 –15 0 15 30 45 60 75 Tamb – Ambient Temperature ( °C ) IF = 10 mA Figure 9. Relative Radiant Intensity vs. Angular Displacement 90 14348 Figure 7. Relative Radiant Intensity vs. Ambient Temperature Document Number 81074 Rev. 1, 30–Apr–02 www.vishay.com 3 (6) TSKS5400S Vishay Semiconductors Dimensions of TSKS5400S in mm 14307 www.vishay.com 4 (6) Document Number 81074 Rev. 1, 30–Apr–02 TSKS5400S Vishay Semiconductors Tape and Ammopack Standards Kennzeichnung: Barcode–Etikett siehe 5.6.4 Labeling: Barcode–label see 5.6.4 16716 Document Number 81074 Rev. 1, 30–Apr–02 www.vishay.com 5 (6) TSKS5400S Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 6 (6) Document Number 81074 Rev. 1, 30–Apr–02
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