U5199NL

SST/U5196NL Series New Product Vishay Siliconix Monolithic N-Channel JFET Duals SST5198NL SST5199NL PRODUCT SUMMARY Part Number U5196NL U5197NL SST/U5198NL SST/U5199NL U5196NL U5197NL U5198NL U5199NL VGS(off) (V) -0.7 to -4 -0.7 to -4 -0.7 to -4 -0.7 to -4 V(BR)GSS Min (V) -50 -50 -50 -50 gfs Min (mS) 1 1 1 1 IG Max (pA) -15 -15 -15 -15 jVGS1 - VGS2j Max (mV) 5 5 10 15 FEATURES D D D D D D D Anti Latchup Capability Monolithic Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: 5 pA Low Noise High CMRR: 100 dB BENEFITS D D D D D D D External Substrate Bias—Avoids Latchup Tight Differential Match vs. Current Improved Op Amp Speed, Settling Time Accuracy Minimum Input Error/Trimming Requirement Insignificant Signal Loss/Error Voltage High System Sensitivity Minimum Error with Large Input Signal APPLICATIONS D Wideband Differential Amps D High-Speed, Temp-Compensated, Single-Ended Input Amps D High Speed Comparators D Impedance Converters DESCRIPTION The SST/U5196NL series of JFET duals are designed for high-performance differential amplification for a wide range of precision test instrumentation applications. This series features tightly matched specs, low gate leakage for accuracy, and wide dynamic range with IG guaranteed at VDG = 20 V. Pins 4 and 8 of the SST series and pin 4 on the U series part numbers enable the substrate to be connected to a positive, external bias (VDD) to avoid latchup. Narrow Body SOIC S1 D1 G1 SUBSTRATE 1 2 3 4 8 7 6 5 SUBSTRATE G2 D2 S2 D1 2 3 Top View Marking Codes: SST5198NL - 5198NL SST5199NL - 5199NL CASE, SUBSTRATE Top View U5196NL, U5198NL U5197NL, U5199NL G1 4 5 S2 6 D2 S1 1 7 G2 The U series in the hermetically-sealed TO-78 package is available with full military processing. The SST series SO-8 package provides ease of manufacturing and the symmetrical pinout prevents improper orientation. The SO-8 package is available with tape-and-reel options for compatibility with automatic assembly methods. For similar products see the low-noise SST/U401NL series and the low-leakage U421NL/423NL data sheets. TO-78 ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -50 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . 300 _C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 200_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Document Number: 72156 S-03468—Rev. B, 11-Mar-03 Power Dissipation : Per Sidea . . . . . . . . . . . . . . . . . . . . . . . . 250 mW Totalb . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW Notes a. Derate 2 mW/_C above 85_C b. Derate 4 mW/_C above 85_C www.vishay.com 7-1 SST/U5196NL Series Vishay Siliconix New Product SPECIFICATIONS FOR U5196NL AND U5197NL (TA = 25_C UNLESS OTHERWISE NOTED) Limits U5196NL U5197NL Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Symbol Test Conditions IG = - 1 mA, VDS = 0 V VDS = 20 V, ID = 1 nA VDS = 20 V, VGS = 0 V VGS = - 30 V, VDS = 0 V TA = 150_C VDG = 20 V, ID = 200 mA TA = 125_C VDG = 20 V, ID = 200 mA Typa Min Max Min Max Unit V(BR)GSS VGS(off) IDSS IGSS IG VGS -57 -2 3 -10 -20 -5 - 0.8 -50 -0.7 0.7 -4 -50 -0.7 0.7 -4 V mA pA nA pA nA V 7 -25 -50 -15 -15 7 -25 -50 -15 -15 Gate Operating Current Gate-Source Voltage -1.5 -0.2 -3.8 -0.2 -3.8 Dynamic Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage Noise Figure gfs gos gfs gos Ciss Crss en NF 3.0 VDS = 20 V, VGS = 0 V V, f = 1 kHz 8 0.8 1 3 VDS = 20 V, VGS = 0 V V, f = 1 MHz 1 11 0.7 1 4 50 1.6 4 6 2 20 0.5 0.7 1 4 50 1.6 4 6 pF 2 20 0.5 nV⁄ √Hz dB mS mS mS mS VDS = 20 V, ID = 200 mA V, DS f = 1 kHz VDS = 20 V, VGS = 0 V, f = 1 kHz VDS = 20 V, VGS = 0 V f = 100 Hz, RG = 10 MW Matching Differential Gate-Source Voltage Gate-Source Voltage Differential Change with Temperature |V GS1–V GS2| D|V GS1–V GS2| DT I DSS1 I DSS2 gfs1 gfs2 |g os1–g os2| |I G1 * I G2| CMRR VDG = 20 V, ID = 200 mA , TA = 125_C VDG = 10 to 20 V, ID = 200 mA VDG = 20 V, ID = 200 mA VDG = 20 V, ID = 200 mA TA = - 55 to 125_C VDS = 20 V, VGS = 0 V 0.98 0.95 5 5 5 10 mV mV/_C Saturation Drain Current Ratio 1 0.95 1 Transconductance Ratio 0.99 VDS = 20 V, ID = 200 mA V, DS f = 1 kHz 0.1 0.97 1 0.97 1 mS Differential Output Conductance 1 1 Differential Gate Current Common Mode Rejection Ratio 0.1 100 5 5 nA dB www.vishay.com 7-2 Document Number: 72156 S-03468—Rev. B, 11-Mar-03 SST/U5196NL Series New Product SPECIFICATIONS FOR SST/U5198NL AND SST/U5199NL (TA = 25_C UNLESS OTHERWISE NOTED) Limits SST/U5198NL SST/U5199NL Vishay Siliconix Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Symbol Test Conditions IG = - 1 mA, VDS = 0 V VDS = 20 V, ID = 1 nA VDS = 20 V, VGS = 0 V VGS = - 30 V, VDS = 0 V TA = 150_C VDG = 20 V, ID = 200 mA TA =125_C VDG = 20 V, ID = 200 mA Typa Min Max Min Max Unit V(BR)GSS VGS(off) IDSS IGSS IG VGS -57 -2 3 -10 -20 -5 - 0.8 -50 -0.7 0.7 -4 -50 -0.7 0.7 -4 V mA pA nA pA nA V 7 -25 -50 -15 -15 7 -25 -50 -15 -15 Gate Operating Current Gate-Source Voltage -1.5 -0.2 -3.8 -0.2 -3.8 Dynamic Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage Noise Figure gfs VDS = 20 V VGS = 0 V, f = 1 kHz V, kHz gos gfs gos Ciss Crss en NF VDS = 20 V, VGS = 0 V, f = 1 MHz 8 0.8 1 3 1 11 0.5 0.7 50 1.6 4 6 2 0.7 50 1.6 4 6 2 pF nV⁄ √Hz dB 3.0 1 4 1 4 mS mS mS mS VDS = 20 V, ID = 200 mA V, DS f = 1 kHz VDS = 20 V, VGS = 0 V, f = 1 kHz VDS = 20 V, VGS = 0 V f = 100 Hz, RG = 10 MW (U Only) Matching Differential Gate-Source Voltage |V GS1–V GS2| D|V GS1–V GS2| V DT D|V Saturation Drain Current Ratio V I DSS1 I DSS2 gfs1 gfs2 |g os1–g os2| |I G1 * I G2| CMRR VDG = 20 V, ID = 200 mA, V, A, DG TA = 125_C | VDS = 20 V VGS = 0 V V, VDG = 20 V, ID = 200 mA SST5198NL Gate-Source V lt Gt S Voltage Differential Diff ti l Change Temperature Change with Temperature VDG = 20 V ID = 200 mA 20 V, 200 TA = - 55 to 125_C SST5199NL U Only SST Only U Only SST Only VDS = 20 V, ID = 200 mA V, DS f = 1 kHz U Only SST Only U Only SST Only U Only 97 0.1 5 5 nA dB NQP 0.2 1 1 0.97 0.95 1 0.95 1 0.97 0.95 1 0.95 1 mS 15 30 20 40 mV/_C 10 15 mV Transconductance Ratio Differential Output Conductance Differential Gate Current Common Mode Rejection Ratio VDG = 10 to 20 V, ID = 200 mA Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. Document Number: 72156 S-03468—Rev. B, 11-Mar-03 www.vishay.com 7-3 SST/U5196NL Series Vishay Siliconix New Product TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage 5 3 gfs - Forward Transconductance (mS) 100 nA IG @ ID = 200 mA 10 nA TA = 125_C IG - Gate Leakage 1 nA IGSS @ 125_C 100 pA 200 mA 50 mA 50 mA Gate Leakage Current IDSS - Saturation Drain Current (mA) 4 gfs 3 IDSS 2.6 2.2 2 1.8 10 pA TA = 25_C 1 pA IGSS @ 25_C 1 IDSS @ VDS = 15 V, VGS = 0 V gfs @ VDG = 15 V, VGS = 0 V f = 1 kHz 1.4 0 0 -1 -2 -3 -4 -5 1 0.1 pA 0 10 20 30 40 50 VDG - Drain-Gate Voltage (V) VGS(off) - Gate-Source Cutoff Voltage (V) Output Characteristics 5 VGS(off) = - 2 V 4 ID - Drain Current (mA) ID - Drain Current (mA) 4 5 Output Characteristics VGS(off) = - 3 V VGS = 0 V -0.3 V -0.6 V 3 -0.9 V 2 -1.2 V -1.5 V 1 -1.8 V -2.1 V 0 20 0 4 8 12 -2.4 V 16 3 VGS = 0 V -0.2 V 2 -0.4 V -0.6 V 1 -0.8 V -1.0 V -1.2 V 0 0 4 8 12 -1.4 V 16 20 VDS - Drain-Source Voltage (V) VDS - Drain-Source Voltage (V) Output Characteristics 2 VGS(off) = - 2 V 1.6 ID - Drain Current (mA) VGS = 0 V -0.2 V -0.4 V 1.2 -0.6 V -0.8 V 0.8 -1.0 V 0.4 -1.2 V -1.4 V 0 0 0.2 0.4 0.6 -1.6 V 0.8 0 1 0 0.2 ID - Drain Current (mA) 2.0 2.5 Output Characteristics VGS(off) = - 3 V VGS = 0 V -0.3 V -0.6 V -0.9 V 1.5 -1.2 V 1.0 -1.5 V -1.8 V 0.5 -2.1 V -2.4 V 0.4 0.6 0.8 1 VDS - Drain-Source Voltage (V) VDS - Drain-Source Voltage (V) www.vishay.com 7-4 Document Number: 72156 S-03468—Rev. B, 11-Mar-03 SST/U5196NL Series New Product TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Transfer Characteristics 5 VGS(off) = - 2 V 4 ID - Drain Current (mA) (mV) VDS = 20 V 100 VDG = 20 V TA = 25_C Vishay Siliconix Gate-Source Differential Voltage vs. Drain Current 3 TA = - 55_C 25_C VGS1 - VGS2 SST/U5199 10 U5196 2 1 125_C 0 0 -0.5 -1.0 -1.5 -2.0 VGS - Gate-Source Voltage (V) -2.5 1 0.01 0.1 ID - Drain Current (mA) 1 Voltage Differential with Temperature vs. Drain Current 100 VDG = 20 V DTA = 25 to 125_C DTA = - 55 to 25_C 130 Common Mode Rejection Ratio vs. Drain Current DVDG DV GS1 - VGS2 ( m V/ _ C ) CMRR = 20 log 120 CMRR (dB) SST/U5199 10 110 DVDG = 10 - 20 V 100 5 - 10 V 90 VGS1 - VGS2 Dt U5196 D 1 0.01 80 0.1 ID - Drain Current (mA) 1 0.01 0.1 ID - Drain Current (mA) 1 Circuit Voltage Gain vs. Drain Current rDS(on) - Drain-Source On-Resistance ( Ω ) 100 1k On-Resistance vs. Drain Current 80 AV - Voltage Gain 800 60 VGS(off) = - 3 V VGS(off) = - 2 V 40 AV + 20 g fs R L 1 ) R Lg os 600 VGS(off) = - 2 V 400 VGS(off) = - 3 V Assume VDD = 15 V, VDS = 5 V 10 V RL + ID 200 0 0.01 0 0.1 ID - Drain Current (mA) 1 0.01 0.1 ID - Drain Current (mA) 1 Document Number: 72156 S-03468—Rev. B, 11-Mar-03 www.vishay.com 7-5 SST/U5196NL Series Vishay Siliconix New Product TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Common-Source Input Capacitance vs. Gate-Source Voltage 10 C rss - Reverse Feedback Capacitance (pF) f = 1 MHz 8 5 f = 1 MHz 4 Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage C iss - Input Capacitance (pF) 6 VDS = 0 V 4 5V 15 V 2 20 V 0 0 -4 VGS -8 -12 -16 - Gate-Source Voltage (V) -20 3 VDS = 0 V 5V 2 15 V 1 20 V 0 0 -4 -8 -12 -16 VGS - Gate-Source Voltage (V) -20 Equivalent Input Noise Voltage vs. Frequency 20 VDS = 20 V gos - Output Conductance (µS) 16 Hz ID @ 200 mA 12 2.0 2.5 Output Conductance vs. Drain Current VGS(off) = - 2 V VDS = 20 V f = 1 kHz TA = - 55_C 1.5 en - Noise Voltage nV / 8 VGS = 0 V 1.0 25_C 4 0.5 125_C 0 10 100 1k f - Frequency (Hz) 10 k 100 k 0 0.01 0.1 ID - Drain Current (mA) 1 Common-Source Forward Transconductance vs. Drain Current 2.5 VGS(off) = - 2 V gfs - Forward Transconductance (mS) 2.0 TA = - 55_C 1.5 25_C 1.0 VDS = 20 V f = 1 kHz rDS(on) - Drain-Source On-Resistance ( Ω ) 1k On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage 10 g os - Output Conductance ( mS) 800 gos 8 600 6 400 rDS 4 0.5 125_C 200 rDS @ ID = 100 mA, VGS = 0 V gos @ VDS = 20 V, VGS = 0 V, f = 1 kHz 0 2 0 0.01 0.1 ID - Drain Current (mA) 1 0 0 -1 -2 -3 -4 -5 VGS(off) - Gate-Source Cutoff Voltage (V) www.vishay.com 7-6 Document Number: 72156 S-03468—Rev. B, 11-Mar-03