VEMT2520X01

VEMT2500X01, VEMT2520X01 Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: surface mount • Package form: GW, RGW VEMT2520X01 VEMT2500X01 • Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8 • AEC-Q101 qualified • High radiant sensitivity • Suitable for visible and near infrared radiation • Fast response times • Angle of half sensitivity: ϕ = ± 15° 16758-10 • Package matched with IR emitter series VSMB2000X01 • Floor life: 4 weeks, MSL 2a, acc. J-STD-020 • Lead (Pb)-free reflow soldering • Compliant to RoHS directive 2002/95/EC accordance to WEEE 2002/96/EC and in DESCRIPTION VEMT2500X01 series are silicon NPN epitaxial planar phototransistors in a miniature dome lens, clear epoxy package for surface mounting. The device is sensitive to visible and near infrared radiation. • Halogen-free according to IEC 61249-2-21 definition • Find out more about Vishay’s Automotive Grade Product requirements at: www.vishay.com/applications APPLICATIONS • Detector in automotive applications • Photo interrupters • Miniature switches • Counters • Encoders • Position sensors PRODUCT SUMMARY COMPONENT VEMT2500X01 VEMT2520X01 Note Test condition see table “Basic Characteristics” Ica (mA) 6 6 ϕ (deg) ± 15 ± 15 λ0.1 (nm) 470 to 1090 470 to 1090 ORDERING INFORMATION ORDERING CODE VEMT2500X01 VEMT2520X01 Note MOQ: minimum order quantity PACKAGING Tape and reel Tape and reel REMARKS MOQ: 6000 pcs, 6000 pcs/reel MOQ: 6000 pcs, 6000 pcs/reel PACKAGE FORM Reverse gullwing Gullwing ABSOLUTE MAXIMUM RATINGS PARAMETER Collector emitter voltage Emitter collector voltage Collector current Power power dissipation Document Number: 81134 Rev. 1.0, 29-Apr-09 Tamb ≤ 75 °C TEST CONDITION SYMBOL VCEO VECO IC PV VALUE 20 7 50 100 UNIT V V mA mW www.vishay.com 1 For technical questions, contact: detectortechsupport@vishay.com VEMT2500X01, VEMT2520X01 Vishay Semiconductors Silicon NPN Phototransistor ABSOLUTE MAXIMUM RATINGS PARAMETER Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified Acc. reflow profile fig. 7 Acc. J-STD-051 TEST CONDITION SYMBOL Tj Tamb Tstg Tsd RthJA VALUE 100 - 40 to + 100 - 40 to + 100 260 250 UNIT °C °C °C °C K/W 120 PV - Power Dissipation (mW) 100 80 60 RthJA = 250 K/W 40 20 0 0 10 20 30 40 50 60 70 80 90 100 21619 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Collector emitter breakdown voltage Collector dark current Collector emitter capacitance Collector light current Angle of half sensitivity Wavelength of peak sensitivity Range of spectral bandwidth Collector emitter saturation voltage Note Tamb = 25 °C, unless otherwise specified IC = 0.05 mA TEST CONDITION IC = 0.1 mA VCE = 5 V, E = 0 VCE = 0 V, f = 1 MHz, E = 0 Ee = 1 mW/cm2, λ = 950 nm, VCE = 5 V SYMBOL VCEO ICEO CCEO ICA ϕ λp λ0.1 VCEsat 3 MIN. 20 1 25 6 ± 15 850 470 to 1090 0.4 9 100 TYP. MAX. UNIT V nA pF mA deg nm nm V www.vishay.com 2 For technical questions, contact: detectortechsupport@vishay.com Document Number: 81134 Rev. 1.0, 29-Apr-09 VEMT2500X01, VEMT2520X01 Silicon NPN Phototransistor Vishay Semiconductors BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 10 000 IF = 0 1000 VCE = 70 V VCE = 25 V 100 VCE = 5 V 1.2 S (λ)rel - Relative Spectral Sensitivity ICE0 - Collector Dark Current (nA) 1.0 0.8 0.6 0.4 0.2 0 10 1 0 20594 10 20 30 40 50 60 70 80 90 100 21555 400 500 600 700 800 900 1000 1100 Tamb - Ambient Temperature (°C) λ - Wavelength (nm) Fig. 2 - Collector Dark Current vs. Ambient Temperature Fig. 5 - Relative Spectral Sensitivity vs. Wavelength 0° 10° 20° 30° 100 Ica - Collector Light Current (mA) 10 Srel - Relative Sensitivity 40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 1 VCE = 5 V, λ = 950 nm 0.1 0.01 0.01 21573 0.1 1 10 94 8248 0.6 0.4 0.2 0 Ee - Irradiance (mW/cm²) Fig. 3 - Collector Light Current vs. Irradiance Fig. 6 - Relative Radiant Sensitivity vs. Angular Displacement 100 90 tr/tf - Rise/Fall Time (µs) 80 70 60 50 40 30 20 10 0 0 250 500 750 1000 1250 1500 1750 2000 IC - Collector Current (µA) tr tf RL = 100 Ω 20599 Fig. 4 - Rise/Fall Time vs. Collector Current Document Number: 81134 Rev. 1.0, 29-Apr-09 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 3 ϕ - Angular Displacement VEMT2500X01, VEMT2520X01 Vishay Semiconductors REFLOW SOLDER PROFILE 300 250 255 °C 240 °C 217 °C max. 260 °C 245 °C Silicon NPN Phototransistor DRYPACK Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. Temperature (°C) 200 max. 30 s 150 max. 120 s 100 50 0 0 50 100 150 200 250 300 max. ramp up 3 °C/s max. ramp down 6 °C/s max. 100 s FLOOR LIFE Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 4 weeks Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 2a, acc. to J-STD-020. DRYING Time (s) 19841 Fig. 7 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. PACKAGE DIMENSIONS VEMT2500X01 in millimeters 0.4 Ø 1.8 ± 0.1 ± 0.1 2.77 ± 0.2 1.6 0.05 2.2 2.2 5.8 ± 0.2 0.3 0.1 9 Exposed copper 2.3 ± 0.2 Z 20:1 1.1 ± 0.1 0.5 ± 0.2 0.4 2.3 Collector PIN ID Emitter 1.7 0.75 Solder pad proposal acc. IPC 7351 Technical drawings according to DIN specifications Not indicated to Ø 2.3 6.7 ± 0.1 lerances ±0.1 Drawing-No.: 6.544-5391.01-4 Issue: 1; 26.09.08 21570 0.254 www.vishay.com 4 For technical questions, contact: detectortechsupport@vishay.com Document Number: 81134 Rev. 1.0, 29-Apr-09 VEMT2500X01, VEMT2520X01 Silicon NPN Phototransistor Vishay Semiconductors PACKAGE DIMENSIONS VEMT2520X01 in millimeters 0.4 Ø 1.8 2.77 ± 0.2 1.6 2.2 4.2 ± 0.2 0 .1 9 0.05 2.2 Exposed copper 2.3 ± 0.2 0.5 2.3 ± 0.2 0.4 0.3 0.6 Collector Pin ID Emitter Technical drawings according to DIN specifications 0.75 Solder pad proposal acc. IPC 7351 Not indicated tolerances ± 0.1 2.45 5.15 Drawing-No.: 6.544-5383.01-4 Issue: 4; 28.01.09 21569 0.254 Document Number: 81134 Rev. 1.0, 29-Apr-09 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 5 VEMT2500X01, VEMT2520X01 Vishay Semiconductors Silicon NPN Phototransistor TAPE AND REEL DIMENSIONS VEMT2500X01 in millimeters Reel Unreel direction X Ø 62 ± 0.5 2. 0.5 5± Tape position coming out from reel 6000 pcs/reel Ø 330 ± 1 Ø 13 ± 0.5 Label posted here 12.4 ± 1.5 Technical drawings according to DIN specifications Leader and trailer tape: Empty (160 mm min.) Parts mounted Direction of pulling out Empty (400 mm min.) 1.75 ± 0.1 5.5 ± 0.05 Ø 1.55 ± 0.05 Terminal position in tape Device VEMT2000 Collector VEMT2500 VEMD2000 Cathode VSMB2000 Anode Emitter 4 ± 0.1 2 ± 0.05 I X 2:1 Lead I Lead II 12 ± 0.3 3.05 ± 0.1 II 4 ± 0.1 Drawing-No.: 9.800-5100.01-4 Issue: X; 29.04.09 21572 www.vishay.com 6 For technical questions, contact: detectortechsupport@vishay.com Document Number: 81134 Rev. 1.0, 29-Apr-09 VEMT2500X01, VEMT2520X01 Silicon NPN Phototransistor Vishay Semiconductors TAPE AND REEL DIMENSIONS VEMT2520X01 in millimeters Reel Unreel direction X 2. Ø 62 ± 0.5 5± 0.5 Tape position coming out from reel 6000 pcs/reel Ø 330 ± 1 Ø 13 ± 0.5 Label posted here 12.4 ± 1.5 technical drawings according to DIN specifications Leader and trailer tape: Empty (160 mm min.) Parts mounted Direction of pulling out Empty (400 mm min.) 1.75 ± 0.1 5.5 ± 0.05 12 ± 0.3 www.vishay.com 7 Terminal position in tape Device VEMT2020 Collector VEMT2520 VSMB2020 Cathode VEMD2020 Anode Emitter Ø 1.55 ± 0.05 I X 2:1 4 ± 0.1 2 ± 0.05 Lead I Lead II 3.05 ± 0.1 II 4 ± 0.1 Drawing-No.: 21571 9.800-5091.01-4 Issue: X; 29.04.09 Document Number: 81134 Rev. 1.0, 29-Apr-09 For technical questions, contact: detectortechsupport@vishay.com Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1