MMBT3904WG

Z owie Technology Corporation General Purpose Transistor NPN Silicon Lead free product 3 BASE 1 2 COLLECTOR 3 MMBT3904WG 1 SOT-323 2 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value 40 60 6.0 200 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board(1) TA=25 C o Derate above 25 C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate, o Derate above 25 C Thermal Resistance Junction to Ambient Junction and Storage Temperature (2) o Symbol PD R JA TA=25 C o Max. 225 1.8 556 300 2.4 417 -55 to +150 Unit mW mW / oC o C/W PD R JA TJ,TSTG mW mW / oC o C/W o C ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Characteristic Symbol Min. Max. Unit o OFF CHARACTERISTICS Collector-Emitter Breakdowe Voltage ( IC=1.0mAdc, IB=0 ) Collector-Base Breakdowe Voltage ( IC=10 uAdc, IE=0 ) Emitter-Base Breakdowe Voltage ( IE=10 uAdc, IC=0 ) Base Cutoff Current ( VCE=30 Vdc, VEB=3.0 Vdc ) Collector Cutoff Current ( VCE=30 Vdc, VEB=3.0 Vdc ) (3) V(BR)CEO 40 - Vdc V(BR)CBO 60 - Vdc V(BR)EBO 6.0 - Vdc IBL - 50 nAdc ICEX - 50 nAdc 2006/11 Zowie Technology Corporation Z owie Technology Corporation o ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Continued) Characteristic Symbol Min. Max. Unit (3) ON CHARACTERISTICS DC Current Gain ( IC=0.1 mAdc, VCE=1.0 Vdc ) ( IC=1.0 mAdc, VCE=1.0 Vdc ) ( IC=10 mAdc, VCE=1.0 Vdc ) ( IC=50 mAdc, VCE=1.0 Vdc ) ( IC=100 mAdc, VCE=1.0 Vdc ) Collector-Emitter Saturation Voltage ( IC=10 mAdc, IB=1.0 mAdc ) ( IC=50 mAdc, IB=5.0 mAdc ) Base-Emitter Saturation Voltage ( IC=10 mAdc, IB=1.0 mAdc ) ( IC=50 mAdc, IB=5.0 mAdc ) (3) (3) HFE 40 70 100 60 30 300 - - VCE(sat) - 0.2 0.3 Vdc VBE(sat) 0.65 - 0.85 0.95 Vdc SMALL-SIGNAL CHARACTERISTIC Current-Gain-Bandwidth Product ( IC=10 mAdc, VCE=20 Vdc, f=100 MHZ ) Output Capacitance ( VCB=5.0 Vdc, IE=0, f=1.0 MHZ ) Input Capacitance ( VEB=0.5 Vdc, IC=0, f=1.0 MHZ ) Input Impedance ( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ ) Voltage Feedback Ratio ( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ ) Small-Signal Current Gain ( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ ) Output Admittance ( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ ) Noise Figure ( VCE=5.0 Vdc, IC=100 uAdc, RS=1.0 k ohm, f=1.0 kHZ ) fT 300 MHZ Cobo - 4.0 pF Cibo - 8.0 pF hie 1.0 10 k ohms hre 0.5 8.0 X 10 -4 hfe 100 400 - hoe 1.0 40 u mhos NF - 5.0 dB SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time ( VCC=3.0 Vdc, VBE=-0.5 Vdc, IC=10 mAdc, IB1=1.0 mAdc ) ( VCC=3.0 Vdc, IC=10 mAdc, IB1=IB2=1.0 mAdc ) td tr ts tf 35 35 200 50 nS nS (1) FR-5=1.0 x 0.75 x 0.062in. (2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina. (3) Pulse Test : Pulse Width 300uS, Duty Cycle 2006/11 2.0%. Zowie Technology Corporation Zowie Technology Corporation MMBT3904WG +3 V DUTY CYCLE = 2% 300 ns +10.9 V 10 k 0 ± 0.5 V < 1 ns CS < 4 pF* - 9.1 V 1N916 < 1 ns 275 10 < t1< 500us DUTY CYCLE = 2% t1 +10.9 V +3V 275 10 k CS < 4 pF* * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS 10 7.0 5000 3000 2000 VCC=40 V IC/IB=10 TJ=25 C TJ=125 C o o CAPACITANCE ( pF ) 5.0 Cibo Q, CHARGE (pC) 1000 700 500 QT 3.0 Cobo 2.0 300 200 QA 100 70 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 50 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 REVERSE BIAS VOLTAGE ( VOLTS ) IC, COLLECTOR CURRENT ( mA ) Figure 3. Capacitance Figure 4. Charge Data 2006/11 Zowie Technology Corporation Zowie Technology Corporation MMBT3904WG 500 300 200 100 IC/IB=10 500 300 200 tr, RISE TIME ( ns ) 100 70 50 30 20 10 TIME (ns) 70 50 30 20 10 7 5 1.0 2.0 3.0 5.0 7.0 10 20 30 td @ VOB=0 V tr @ VCC=3.0 V 40 V 15 V 2.0 V 7 5 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 50 70 100 IC, COLLECTOR CURRENT ( mA ) IC, COLLECTOR CURRENT ( mA ) Figure 5. Turn-On Time 500 300 IC/IB=20 IC/IB=10 t'S = tS - 1/8tf IB1/IB2 Figure 6. Rise Time 500 300 VCC=40 V IB1=IB2 t's, STORAGE TIME ( ns ) tf, FALL TIME ( ns ) 200 100 70 50 30 20 10 7 5 200 100 70 50 30 20 10 7 5 IC/IB=10 IC/IB=20 IC/IB=20 IC/IB=10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT ( mA ) IC, COLLECTOR CURRENT ( mA ) Figure 7. Storage Time Figure 8. Fall Time 12 14 NF, NOISE FIGURE ( bB ) 10 SOURCE RESISTANCE=200 IC=0.5 mA SOURCE RESISTANCE=1.0 K IC=50uA NF, NOISE FIGURE ( bB ) SOURCE RESISTANCE=200 IC=1.0 mA 12 10 8 6 4 2 0 f = 1.0 KHZ IC =1.0 mA IC =0.5 mA IC =100 uA IC =50 uA 8 6 4 2 SOURCE RESISTANCE=500 IC=100uA 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 f, FREQUENCY (kHz) RS, SOURCE RESISTANCE ( k OHMS ) Figure 9. Figure 10. 2006/11 Zowie Technology Corporation Zowie Technology Corporation MMBT3904WG 300 100 hoe, OUTPUTADMITTANCE (umhos) 5.0 10 50 hfe, CURRENT GAIN 200 20 10 5 100 70 50 2 1 30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT ( mA ) IC, COLLECTOR CURRENT ( mA ) Figure 11. Current Gain Figure 12. Output Admittance hre, VOLTAGE FEEDBACK RATIO(X 10-4) 5.0 10 20 10 7.0 5.0 3.0 2.0 hie, INPUT IMPEDANCE (k OHMS) 10 5.0 2.0 1.0 0.5 1.0 0.7 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.2 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT ( mA ) IC, COLLECTOR CURRENT ( mA ) Figure 13. Input Impedance Figure 14. Voltage Feedback Ratio TYPICAL STATIC CHARACTERISTICS hFE, DC CURRENT GAIN (NORMALIZED) 2.0 TJ = +125 C VCE=1.0V o 1.0 0.7 0.5 0.3 0.2 TJ = +25 C o TJ = -55 C o 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT ( mA ) Figure 15. DC Current Gain 2006/11 Zowie Technology Corporation Zowie Technology Corporation MMBT3904WG VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25 C o 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT ( mA ) Figure 16. Collector Saturation Region 1.2 1.0 +25 C to +125 C VC o o 1.0 0.5 VBE(sat) @ IC/IB=10 COEFFICIENT ( mV / C ) V, VOLTAGE ( VOLTS ) FOR VCE(sat) -55 C to +25 C o o 0.8 VBE @ ICE=1.0 V o 0 0.6 0.4 VCE(sat) @ IC/IB=10 -0.5 -55 C to +25 C o o -1.0 +25 C to +125 C VB o o FOR VBE(sat) 0.2 0 1.0 2.0 5.0 10 20 50 100 200 -1.5 -2.0 0 20 40 60 80 100 120 140 160 180 200 IC, COLLECTOR CURRENT ( mA ) IC, COLLECTOR CURRENT ( mA ) Figure 17. " ON " Voltage Figure 18. Temperature Coefficients 2006/11 Zowie Technology Corporation