ASDM30P30CTD

ASDM30P30CTD -30V P-Channel MOSFET Features Product Summary • Low RDS(ON) • Fast switching • Green Device Available Application • MB / VGA / Vcore • POL Applications VDSS -30 V RDS(ON)-Typ. 15 mΩ ID -30 A P-MOSFET DFN3*3-8 Absolute Maximum Ratings (TJ=25°C Unless Otherwise Noted) Symbol Parameter Rating Unit VDSS Drain-Source Voltage -30 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 150 °C -55 to 150 °C -30 A TJ TSTG IS IDM Storage Temperature Range Diode Continuous Forward Current ① Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation V Tc=25°C -60 A Tc=25°C -30 Tc=100°C -19 Tc=25°C 17 W Rating Unit A Thermal Characteristics Symbol RJC ③ RJA Parameter Thermal Resistance-Junction to Case Steady State 4.6 °C/W Thermal Resistance-Junction to Ambient Steady State 62 °C/W Note ①：Max. current is limited by bonding wire Note ②：UIS tested and pulse width are limited by maximum junction temperature 150 oC Note ③：Surface Mounted on 1in2 FR-4 board with 1oz. NOV 2018 Version1.0 1/7 Ascend Semicondutor Co.,Ltd ASDM30P30CTD -30V P-Channel MOSFET Electrical Characteristics (TJ=25°C Unless Otherwise Noted) NOV 2018 Version1.0 2/7 Ascend Semicondutor Co.,Ltd ASDM30P30CTD -30V P-Channel MOSFET NOV 2018 Version1.0 3/7 Ascend Semicondutor Co.,Ltd ASDM30P30CTD -30V P-Channel MOSFET NOV 2018 Version1.0 4/7 Ascend Semicondutor Co.,Ltd ASDM30P30CTD -30V P-Channel MOSFET Ordering and Marking Information Device Marking ASDM30P30CTD-R 30P30C Package Packaging Quantity DFN3*3-8 Tape Reel 5000 MARKING PACKAGE 30P30C DFN3*3-8 NOV 2018 Version1.0 5/7 Ascend Semicondutor Co.,Ltd ASDM30P30CTD -30V P-Channel MOSFET DFN3x3 PACKAGE INFORMATION Symbol Dimensions In Millimeters MAX MIN MAX MIN A 0.900 0.700 0.035 0.028 b 0.350 0.240 0.014 0.009 c 0.250 0.100 0.010 0.004 D 3.450 3.050 0.136 0.120 D1 3.200 2.900 0.126 0.114 D2 1.850 1.350 0.073 0.053 E 3.400 3.000 0.134 0.118 E1 3.250 2.900 0.128 0.114 E2 2.600 2.350 0.102 0.093 e NOV 2018 Version1.0 Dimensions In Inches 0.65BSC 0.026BSC H 0.500 0.300 0.020 0.012 L 0.500 0.300 0.020 0.012 L1 0.200 0.070 0.008 0.003 θ 12° 0° 12° 0° 6/7 Ascend Semicondutor Co.,Ltd ASDM30P30CTD -30V P-Channel MOSFET IMPORTANT NOTICE Xi‘an Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Xi‘an Ascend Semiconductor Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Xi‘an Ascend Semiconductor Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Xi‘an Ascend Semiconductor Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume . all risks of such use and will agree to hold Ascendsemi Incorporated and all the companies whose products are represented on Xi‘an Ascend Semiconductor Incorporated website, harmless against all damages. Xi‘an Ascend Semiconductor Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Xi‘an Ascend Semiconductor Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Xi‘an Ascend Semiconductor Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. www.ascendsemi.com NOV 2018 Version1.0 7/7 Ascend Semicondutor Co.,Ltd