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SFH4505

SFH4505

  • 厂商:

    AMSOSRAM(艾迈斯半导体)

  • 封装:

    SMR®

  • 描述:

    EMITTERIR950NM100MASMR

  • 数据手册
  • 价格&库存
SFH4505 数据手册
Leistungsstarke IR-Lumineszenzdiode High Power Infrared Emitter Lead (Pb) Free Product - RoHS Compliant SFH 4500 SFH 4505 SFH 4500 SFH 4505 Nicht für Neuentwicklungen / Not for new designs Wesentliche Merkmale • • • • Leistungsstarke GaAs-LED (40mW) Hoher Wirkunsgrad bei kleinen Strömen Typische Peakwellenlänge 950nm Engwinkliger SMT-Sidelooker Features • • • • High Power GaAs-LED (40mW) High Efficiency at low currents Typical peak wavelength 950nm Narrow angle SMT-Sidelooker Anwendungen • Bauteil mit hoher Strahlstärke zur Oberflächenmontage (SMT) • Schnelle Datenübertragung mit Übertragungsraten bis 100 Mbaud (IR Tastatur, Joystick, Multimedia) • Analoge und digitale Hi-Fi Audio- und Videosignalübertragung • Alarm- und Sicherungssysteme • IR Freiraumdatenübertragung • IR-Scheinwerfer für Kameras Applications • Device with high radiant intensity suitable for surface mounting (SMT) • High data transmission rate up to 100 Mbaud (IR keyboard, Joystick, Multimedia) • Analog and digital Hi-Fi audio and video signal transmission • Alarm and safety equipment • IR free air data transmission • IR spotlight for cameras Typ Type SFH 4500 SFH 4505 1) Bestellnummer Strahlstärkegruppierung1) (IF = 100 mA, tp = 20 ms) Ordering Code Radiant Intensity Grouping 1) Ie (mW/sr) Q65110A2642 Q65110A2643 85 (>25) 85 (>25) gemessen bei einem Raumwinkel Ω = 0.01 sr / measured at a solid angle of Ω = 0.01 sr 2008-01-14 1 SFH 4500, SFH 4505 Grenzwerte (TA = 25 °C) Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Durchlassstrom Forward current Stoßstrom Surge current tp = 10 µs, D = 0 Verlustleistung Power dissipation Wärmewiderstand Sperrschicht - Umgebung, freie Beinchenlänge max. 10 mm Thermal resistance junction - ambient, lead length between package bottom and PCB max. 10 mm Symbol Symbol Wert Value – 40 … + 100 3 100 2.2 Einheit Unit °C V mA A Top; Tstg VR IF (DC) IFSM Ptot RthJA 180 375 mW K/W 2008-01-14 2 SFH 4500, SFH 4505 Kennwerte (TA = 25 °C) Characteristics Bezeichnung Parameter Wellenlänge der Strahlung Wavelength of peak emission IF = 100 mA, tp = 20 ms Spektrale Bandbreite bei 50% von Imax Spectral bandwidth at 50% of Imax IF = 100 mA, tp = 20 ms Abstrahlwinkel Half angle Aktive Chipfläche Active chip area Abmessungen der aktiven Chipfläche Dimension of the active chip area Schaltzeiten, Ie von 10% auf 90% und von 90% auf 10% Switching times, Ie from 10% to 90% and from 90% to 10% IF = 100 mA, tP = 20 ms, RL = 50 Ω Kapazität Capacitance VR = 0 V, f = 1 MHz Durchlassspannung Forward voltage IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 µs Sperrstrom Reverse current VR = 3 V Gesamtstrahlungsfluss Total radiant flux IF = 100 mA, tp = 20 ms Temperaturkoeffizient von Ie bzw. Φe Temperature coefficient of Ie or Φe IF = 100 mA Symbol Symbol λpeak Wert Value 950 Einheit Unit nm ∆λ 40 nm ϕ ± 10 0.09 0.3 × 0.3 10 Grad deg. mm2 mm² ns A L×B L×W tr , tf Co 35 pF VF VF 1.5 (≤ 1.8) 3.2 (≤ 4.3) 0.01 (≤ 10) V V µA IR Φe 40 mW TCI – 0.44 %/K 2008-01-14 3 SFH 4500, SFH 4505 Kennwerte (TA = 25 °C) (cont’d) Characteristics Bezeichnung Parameter Temperaturkoeffizient von VF Temperature coefficient of VF IF = 100 mA Temperaturkoeffizient von λ Temperature coefficient of λ IF = 100 mA Symbol Symbol TCV Wert Value – 1.5 Einheit Unit mV/K TCλ + 0.2 nm/K Strahlstärke Ie in Achsrichtung gemessen bei einem Raumwinkel von Ω = 0.01 sr Radiant Intensity Ie in Axial Direction measured at a solid angle of Ω = 0.01 sr Bezeichnung Parameter Strahlstärke Radiant intensity IF = 100 mA, tp = 20 ms Strahlstärke Radiant intensity IF = 1 A, tp = 100 µs Symbol Symbol Ie min Ie typ Ie typ Wert Value 25 85 550 Einheit Unit mW/sr mW/sr mW/sr 2008-01-14 4 SFH 4500, SFH 4505 Relative Spectral Emission Ierel = f (λ) 100 OHF00777 Radiant Intensity Ιe/Ιe (100 mA) = f (IF) Single pulse, tp = 20 µs 10 2 Ιe OHF00809 Max. Permissible Forward Current IF = f (TA) 125 OHF01534 Ι erel 80 I F mA 100 Ι e (100 mA) 60 10 0 75 40 10 -1 50 20 10 -2 25 0 800 850 900 950 1000 nm 1100 10 -3 10 0 10 1 10 2 λ 10 3 mA 10 4 ΙF 0 0 10 20 30 40 50 60 70 80 ˚C 100 T Forward Current IF = f (VF) single pulse, tp = 20 µs ΙF 10 4 mA 10 3 OHF00784 Radiation Characteristic Ierel = f (ϕ) 40˚ 30˚ 20˚ 10˚ 0˚ OHF01019 ϕ 1.0 50˚ 0.8 10 2 0.6 10 1 10 0 10 -1 10 -2 10 -3 60˚ 0.4 70˚ 0.2 80˚ 90˚ 100˚ 1.0 0.8 0.6 0.4 0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚ 0 0 0.5 1 1.5 2 2.5 3 3.5 V 4.5 VF Permissible Pulse Handling Capability IF = f (τ), TA = 25 °C, duty cycle D = parameter IF 101 A 5 OHF00041 P D= T t tP IF T D= 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 100 5 10-1 -5 10 10-4 10-3 10-2 10-1 100 101 s 10 2 tp 2008-01-14 5 SFH 4500, SFH 4505 Maßzeichnungen Package Outlines SFH 4500 7.5 (0.295) 5.5 (0.217) 2.8 (0.110) 2.4 (0.094) 3.7 (0.146) 3.3 (0.130) 2.7 (0.106) 2.4 (0.094) Chip position 4.5 (0.177) 3.9 (0.154) 2.05 (0.081) R 1.95 (0.077) ((3.2) (0.126)) ((R2.8 (0.110)) ((3.2) (0.126)) 6.0 (0.236) 5.4 (0.213) 14.7 (0.579) 13.1 (0.516) Cathode 2.54 (0.100) spacing 4.5 (0.177) 3.9 (0.154) 7.7 (0.303) 7.1 (0.280) -0.1...0.2 (-0.004...0.008) 4.8 (0.189) 4.4 (0.173) GEOY6960 SFH 4505 8.0 (0.315) 7.4 (0.291) Chip position 4.5 (0.177) 3.9 (0.154) 2.05 (0.081) R 1.95 (0.077) 15.5 (0.610) 14.7 (0.579) 2.7 (0.106) 2.4 (0.094) -0.15...0.15 (-0.006...0.006) ((3.2) (0.126)) ((R2.8 (0.110)) ((3.2) (0.126)) 6.0 (0.236) 5.4 (0.213) 2.54 (0.100) spacing Cathode 4.5 (0.177) 3.9 (0.154) 7.7 (0.303) 7.1 (0.280) 4.8 (0.189) 4.4 (0.173) GEOY6961 Maße in mm (inch) / Dimensions in mm (inch). 2008-01-14 6 SFH 4500, SFH 4505 Empfohlenes Lötpaddesign Recommended Solder Pad 1.3 (0.051) SFH 4500 5.3 (0.209) 2.54 (0.100) Bauteil positioniert Component Location on Pad Padgeometrie für verbesserte Wärmeableitung Paddesign for improved heat dissipation Lötstopplack Solder resist Lötpad 3 (0.118) 7 (0.276) Cu-Fläche > 20 mm 2 2 C 20 1.3 (0.051) SFH 4505 5.9 (0.232) 2.54 (0.100) Bauteil positioniert Component Location on Pad Padgeometrie für verbesserte Wärmeableitung Paddesign for improved heat dissipation Lötstopplack Solder resist Lötpad (1 (0.039)) 1.5 (0.059) 5.2 (0.205) 3 (0.118) Aussparung 4.85 (0.191) ±0.05 (0.002) 7 (0.276) Cu-Fläche > 20 mm 2 Cu-area > 20 mm 2 OHF02450 Maße in mm (inch) / Dimensions in mm (inch). 2008-01-14 7 SFH 4500, SFH 4505 Lötbedingungen Soldering Conditions Reflow Lötprofil für bleifreies Löten Reflow Soldering Profile for lead free soldering Vorbehandlung nach JEDEC Level 3 Preconditioning acc. to JEDEC Level 3 (nach J-STD-020C) (acc. to J-STD-020C) OHLA0687 300 ˚C 255 ˚C 240 ˚C 217 ˚C 200 T 250 Maximum Solder Profile Recommended Solder Profile Minimum Solder Profile ˚C 260 ˚C +0˚C -5 245 ˚C ±5 ˚C ˚C 235 ˚C +5˚C -0 10 s min 30 s max 150 120 s max 100 Ramp Up 3 K/s (max) 25 ˚C 0 0 50 100 150 200 100 s max Ramp Down 6 K/s (max) 50 250 s 300 t Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com © All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2008-01-14 8
SFH4505 价格&库存

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