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HS3M

HS3M

  • 厂商:

    TAIWANSEMICONDUCTOR(台半)

  • 封装:

    SMC

  • 描述:

    HS3M

  • 数据手册
  • 价格&库存
HS3M 数据手册
HS3A - HS3M 3.0 AMPS. High Efficient Surface Mount Rectifiers SMC/DO-214AB .126(3.20) .114(2.90) .245(6.22) .220(5.59) Features Glass passivated junction chip. For surface mounted application Low forward voltage drop Low profile package Built-in stain relief, ideal for automatic placement Fast switching for high efficiency High temperature soldering: o 260 C/10 seconds at terminals Plastic material used carries Underwriters Laboratory Classification 94V0 .280(7.11) .260(6.60) .012(.31) .006(.15) .103(2.62) .079(2.00) .061(1.56) .050(1.26) .063(1.6) .039(1.0) .320(8.13) .305(7.75) .008(.20) .004(.10) Mechanical Data Cases: Molded plastic Terminals: Pure tin plated, lead free Polarity: Indicated by cathode band Packing: 16mm tape per EIA STD RS-481 Weight: 0.21 gram Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current See Fig. 1 Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage @ 3.0A o Symbol HS 3A HS 3B HS 3D HS 3F HS 3G HS 3J HS 3K HS 3M Units V V V A A VRRM VRMS VDC I(AV) IFSM VF 50 35 50 100 70 100 200 140 200 300 210 300 400 280 400 3.0 600 420 600 800 1000 560 700 800 1000 150 1.0 1.3 1.7 V uA uA nS pF o C/W o C o C Maximum DC Reverse Current @ TA =25 C 10 IR at Rated DC Blocking Voltage @ TA=125 oC 250 Maximum Reverse Recovery Time ( Note 1 ) Trr 50 Typical Junction Capacitance ( Note 2 ) Cj 80 Maximum Thermal Resistance (Note 3) RθJA 60 Operating Temperature Range TJ -55 to +150 Storage Temperature Range TSTG -55 to +150 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A Notes: 2. Measured at 1 MHz and Applied VR=4.0 Volts. 3. Mounted on P.C.Board with 0.6” x 0.6”(16mm x 16mm) Copper Pad Area. 75 50 - 278 - Version: B07 RATINGS AND CHARACTERISTIC CURVES (HS3A THRU HS3M) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 3.0 AVERAGE FORWARD CURRENT. (A) FIG.2- TYPICAL REVERSE CHARACTERISTICS 1000 2.5 INSTANTANEOUS REVERSE CURRENT. ( A) Tj=125 0C 2.0 100 1.5 1.0 10 Tj=25 0C 0.5 0 0 25 50 75 100 125 O 150 175 AMBIENT TEMPERATURE. ( C) 1 FIG.3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 300 PEAK FORWARD SURGE CURRENT. (A) 0.1 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLT AGE. (%) 200 100 100 FIG.5- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 1 10 100 1000 INSTANTANEOUS FORWARD CURRENT. (A) NUMBER OF CYCLES AT 60Hz 10 FIG.4- TYPICAL JUNCTION CAPACIT ANCE 175 150 JUNCTION CAPACITANCE.(pF) 125 100 75 50 25 0 0.1 HS HS 3G 1 0.1 0.01 0.2 0.4 0.6 0.8 HS 3A Tj=25 0C -H HS 1.0 1.2 S3 D 3J -H S3 M 0 3A- HS HS 3G 3J- HS 3M 0.5 1 2 5 10 20 50 100 200 500 1000 0 1.4 REVERSE VOLTAGE. (V) FORWARD VOLT AGE. (V) FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50W NONINDUCTIVE 10W NONINDUCTIVE +0.5A (-) DUT (+) 50Vdc (approx) (-) PULSE GENERATOR (NOTE 2) 1W NON INDUCTIVE OSCILLOSCOPE (NOTE 1) (+) 0 -0.25A trr NOTES: 1. Rise Time=7ns max. Input Impedance= NOTES: 1. 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 2. 50 ohms -1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm Version: B07

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