UMW AO3401A

R UMW SMD Type UMW AO3401A M SFET P-Channel Enhancement MOSFET SOT–23 ■ Features ● VDS (V) =-30V ● ID =-4.2 A (VGS =-10V) ● RDS(ON) ＜ 55mΩ (VGS =-10V) ● RDS(ON) ＜ 70mΩ (VGS =-4.5V) ● RDS(ON) ＜ 120mΩ (VGS =-2.5V) 1. GATE 2. SOURCE 3. DRAIN D G S ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Drain-Source Voltage Parameter VDS -30 Gate-Source Voltage VGS ±12 Continuous Drain Current Ta = 25℃ ID Ta = 70℃ Pulsed Drain Current Power Dissipation IDM Ta = 25℃ PD Ta = 70℃ Thermal Resistance.Junction- to-Ambient t ≤ 10s RthJA Thermal Resistance.Junction- to-Ambient -3.5 1.4 1 W 90 125 60 TJ 150 Junction and Storage Temperature Range Tstg -55 to 150 1 A -30 RthJC www.umw-ic.com V -4.2 Junction Temperature Thermal Resistance.Junction- to-Case Unit ℃/W ℃ 友台半导体有限公司 UMW R UMW AO3401A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current Gate Threshold Voltage Test Conditions Min Typ -30 ID=-250μA, VGS=0V VDS=-24V, VGS=0V -1 VDS=-24V, VGS=0V, TJ=55℃ -5 IGSS VDS=0V, VGS=±12V VGS(th) VDS=VGS ID=-250μA On state drain current Forward Transconductance RDS(On) ID(ON) gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate resistance Rg Total Gate Charge Qg Gate Source Charge Qgs VGS=-10V, ID=-4.2A -0.4 65 VGS=-2.5V, ID=-1A 120 VGS=-4.5V, VDS=-5V VDS=-5V, ID=-5A -25 7 77 VGS=0V, VDS=0V, f=1MHz 6 Ω 9.4 VGS=-4.5V, VDS=-15V, ID=-4A VGS=-10V, VDS=-15V, RL=3.6Ω,RGEN=6Ω nC 2 3.2 ns 38.3 12 Turn-Off Fall Time tf Body Diode Reverse Recovery Time trr IF=-4A, dI/dt=100A/μs 20.2 Body Diode Reverse Recovery Charge Qrr IF=5A, dI/dt=100A/μs 11.2 Maximum Body-Diode Continuous Current IS www.umw-ic.com pF 115 3 VSD S 954 VGS=0V, VDS=-15V, f=1MHz 6.3 Diode Forward Voltage mΩ A 11 Qgd tr V VGS=-4.5V, ID=-4A td(on) td(off) nA -1.3 50 Turn-On DelayTime Turn-Off DelayTime μA ±100 75 TJ=125℃ Gate Drain Charge Turn-On Rise Time Unit V VGS=-10V, ID=-4.2A Static Drain-Source On-Resistance Max IS=-1A,VGS=0V 2 -0.75 nC -2.2 A -1 V 友台半导体有限公司 UMW R UMW AO3401A ■ Typical Characterisitics 10 25.00 -10V V DS =-5V -4.5V 20.00 8 6 -ID(A) -ID (A) -3V 15.00 -2.5V 10.00 V GS =-2V 5.00 0.00 0.00 125°C 4 25°C 2 0 1.00 2.00 3.00 4.00 5.00 0 0.5 120 Normalized On-Resistance RDS(ON) (mΩ) 1.5 2 2.5 3 1.8 100 80 V GS =-2.5V V GS =-4.5V 60 40 V GS =-10V 20 0.00 ID=-3.5A, VGS=-4.5V 1.6 ID=-3.5A, VGS=-10V 1.4 V GS =-2.5V 1.2 ID=-1A 1 0.8 2.00 4.00 6.00 8.00 10.00 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 190 170 1.0E+00 150 I D=-2A 1.0E-01 130 125°C -IS (A) RDS(ON) (mΩ) 1 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 110 90 125°C 70 1.0E-02 1.0E-03 25°C 1.0E-04 50 25°C 1.0E-05 30 1.0E-06 10 0 2 4 6 8 0.0 10 www.umw-ic.com 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3 友台半导体有限公司 UMW R UMW AO3401A ■ Typical Characterisitics 1400 5 V DS =-15V ID =-4A 1200 Capacitance (pF) -VGS (Volts) 4 3 2 1000 C iss 800 600 400 C oss 1 C rss 200 0 0 0 2 4 6 8 10 12 0 -Qg (nC) Figure 7: Gate-Charge Characteristics T J(Max) =150°C T A =25°C 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics 40 T J(Max) =150°C T A =25°C 10 µs R DS(ON) 10.0 limited 30 100 µs Power (W) -ID (Amps) 100.0 5 1ms 0.1s 10ms 1.0 20 10 1s 10s DC 0 0.001 0.1 0.1 1 10 100 Figure 9: Maximum Forward Biased Safe . Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=T on /T T J,PK =T A +P DM .ZθJA .RθJA R θJA =90°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 T on T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance www.umw-ic.com 4 友台半导体有限公司