UMW IRLML6401

R UMW Typ UMW IRLML6401 P-Channel Enhancement MOSFET ■ Features SOT–23 ● Ultra low on-resistance. ● P-Channel MOSFET. ● Fast switching. 1. BASE 2. EMITTER MARKING 3. COLLECTOR 1F MK ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS -12 Gate-Source Voltage VGS ±8 Continuous Drain Current VGS=4.5V @ TA=25℃ Continuous Drain Current Pulsed Drain Current VGS=4.5V@ TA=70℃ a ID IDM Power Dissipation @ TA=25℃ Power Dissipation @ TA=70℃ PD Single Pulse Avalanche Energy b EAS Thermal Resistance.Junction- to-Ambient RthJA Linera Derating Factor Unit V -4.3 -3.4 A -34 1.3 0.8 W 33 mJ 100 ℃/W 0.01 W/℃ Junction Temperature TJ 150 Junction and Storage Temperature Range Tstg -55 to 150 ℃ Notes: a.Repetitive Rating :Pulse width limited by maximum junction temperature b.Starting TJ=25℃, L=3.5mH, RG=25Ω, IAS=-4.3A www.umw-ic.com 1 友台半导体有限公司 R UMW Typ UMW IRLML6401 P-Channel Enhancement MOSFET ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current IGSS Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) RDS(On) Test Conditions ID=-250μA, VGS=0V Min Typ Max -12 V VDS=-12V, VGS=0V -1 VDS=-9.6V, VGS=0V, TJ= 55℃ -25 -0.4 nA -0.55 -0.95 V VGS=-4.5V, ID=-4.3A 50 VGS=-2.5V, ID=-2.5A 85 VGS=-1.8V, ID=-2A 125 VDS=-10V, ID=-4.3A μA ±100 VDS=0V, VGS=±8V VDS=VGS ID=-250μA Unit 8.6 mΩ S Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 125 Total Gate Charge Qg 10 15 Gate Source Charge Qgs 1.4 2.1 Gate Drain Charge Qgd 2.6 3.9 Turn-On DelayTime td(on) 11 Turn-On Rise Time tr Turn-Off DelayTime td(off) Turn-Off Fall Time tf Body Diode Reverse Recovery Time trr IF=-1.3A, dI/dt=-100A/μs 22 33 Body Diode Reverse Recovery Charge Qrr IF=-1.3A, dI/dt=-100A/μs 8 12 Nc Maximum Body-Diode Continuous Current IS 1.3 A -1.2 V Diode Forward Voltage www.umw-ic.com VSD 830 VGS=0V, VDS=-10V, f=1MHz VGS=-5.0V, VDS=-10V, ID=-4.3A ID=-1.0A, VDS=-6.0V, RL=6Ω,RGEN=89Ω pF 180 nC 32 ns 250 210 IS=-1.3A,VGS=0V 2 友台半导体有限公司 R UMW Typ UMW IRLML6401 P-Channel Enhancement MOSFET ■ Typical Characterisitics 100 VGS -7.0V -5.0V -4.5V -3.0V -2.5V - 1.8V -1.5V BOTTOM -1.0V 100 VGS -7.0V -5.0V -4.5V -3.0V -2.5V -1.8V -1.5V BOTTOM -1.0V 10 1 -1.0V 0.1 20µs PULSE WIDTH Tj = 25°C TOP -I D, Drain-to-Source Current (A) -I D, Drain-to-Source Current (A) TOP 10 1 -1.0V 0.1 20µs PULSE WIDTH Tj = 150°C 0.01 0.01 0.1 1 10 0.1 100 Fig 1. Typical Output Characteristics 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (Α) T J = 25°C T J = 150°C 1.0 VDS = -12V 20µs PULSE WIDTH 1.0 1.5 2.0 2.5 3.0 3.5 4.0 ID = -4.3A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -4.5V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) -V GS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.umw-ic.com 100 Fig 2. Typical Output Characteristics 100.0 0.1 10 -VDS, Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) 10.0 1 Fig 4. Normalized On-Resistance Vs. Temperature 3 友台半导体有限公司 R UMW Typ UMW IRLML6401 P-Channel Enhancement MOSFET ■ Typical Characterisitics 1200 Coss = Cds + Cgd Ciss 800 600 400 Coss Crss 200 8 6 4 2 0 1 10 ID = -4.3A VDS =-10V -VGS , Gate-to-Source Voltage (V) 1000 C, Capacitance(pF) 10 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd 0 100 0 4 VDS, Drain-to-Source Voltage (V) 16 1000 100 OPERATION IN THIS AREA LIMITED BY RDS(on) 100 . -IID , Drain Current (A) -ISD , Reverse Drain Current (A) 12 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 10 8 QG , Total Gate Charge (nC) TJ = 150 ° C TJ = 25 ° C 1 0.6 1.0 1.4 100us 1ms 1 10ms 0.1 0.1 1.8 -VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.umw-ic.com 10 TC = 25 ° C TJ = 150 ° C Single Pulse V GS = 0 V 0.1 0.2 10us 1 10 -VDS , Drain-to-Source Voltage (V) 100 Fig 8. Maximum Safe Operating Area 4 友台半导体有限公司 R UMW Typ UMW IRLML6401 P-Channel Enhancement MOSFET ■ Typical Characterisitics EAS , Single Pulse Avalanche Energy (mJ) 5.0 -ID , Drain Current (A) 4.0 3.0 2.0 1.0 0.0 25 50 75 100 125 TC , Case Temperature ( ° C) 150 Fig 9. Maximum Drain Current Vs. Case Temperature 80 ID -1.9A -3.4A BOTTOM -4.3A TOP 60 40 20 0 25 50 75 100 125 Starting TJ , Junction Temperature ( °C) 150 Fig 10. Maximum Avalanche Energy Vs. Drain Current Thermal Response (Z thJA ) 1000 100 D = 0.50 0.20 0.10 10 0.05 PDM 0.02 0.01 1 t1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) 1 10 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.umw-ic.com 5 友台半导体有限公司 R UMW Typ UMW IRLML6401 P-Channel Enhancement MOSFET RDS(on) , Drain-to -Source Voltage ( Ω ) 0.10 0.09 0.08 0.07 0.06 0.05 Id = -4.3A 0.04 0.03 0.02 1.0 2.0 3.0 4.0 5.0 6.0 7.0 RDS ( on ) , Drain-to-Source On Resistance ( Ω ) ■ Typical Characterisitics 0.20 VGS = -1.8V VGS = -2.5V 0.15 0.10 VGS = -4.5V 0.05 0.00 0 -VGS, Gate -to -Source Voltage ( V ) 10 20 30 40 -I D , Drain Current ( A ) Fig 12. Typical On-Resistance Vs. Gate Voltage Fig 13. Typical On-Resistance Vs. Drain Current -VGS(th) Gate threshold Voltage (V) 0.8 0.7 ID = -250µA 0.6 0.5 0.4 0.3 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 14. Typical Threshold Voltage Vs. Junction Temperature www.umw-ic.com 6 友台半导体有限公司