UMW IRLML2502

UMW R UMW IRLML2502 SOT-23 Plastic-Encapsulate MOSFETS UMW IRLML2502 N-Channel 20-V(D-S) MOSFET V(BR)DSS ID RDS(on)MAX   20 V SOT-23 45mΩ@4.5V  4.2A 80 mΩ@ 2.5V   1. GATE 2. SOURCE 3. DRAIN FEATURE z TrenchFET Power MOSFET APPLICATION Load Switch for Portable Devices z DC/DC Converter z MARKING Equivalent Circuit 1G MK Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±12 Continuous Drain Current ID 4.2 Continuous Source-Drain Current(Diode Conduction) IS 0.6 Power Dissipation Thermal Resistance from Junction to Ambient (t≤5s) PD 1.25 RθJA 312.5 Unit V A W ℃/W Operating Junction TJ 150 Storage Temperature TSTG -55 ~+150 www.umw-ic.com 1 ℃ 友台半导体有限公司 UMW R UMW IRLML2502 SOT-23 Plastic-Encapsulate MOSFETS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Units Static Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =10µA 20 VGS(th) VDS =VGS, ID =50µA 0.65 Gate-body leakage IGSS VDS =0V, VGS =±8V ±100 nA Zero gate voltage drain current IDSS VDS =20V, VGS =0V 1 µA Gate-threshold voltage a Drain-source on-resistance Forward transconductance a Diode forward voltage rDS(on) 1.2 VGS =4.5V, ID =4.2A 0.035 0.045 VGS =2.5V, ID =3.6A 0.050 0.080 gfs VDS =5V, ID =3.6A 8 VSD IS=0.94A,VGS=0V 0.76 1.2 4.0 10 V Ω S V Dynamic Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd 1.5 Ciss 300 Input capacitance b Output capacitance b Reverse transfer capacitanceb Switching Coss VDS =10V,VGS =4.5V,ID =3.6A VDS =10V,VGS =0V,f=1MHz nC 0.65 pF 120 80 Crss b Turn-on delay time Rise time Turn-off delay time Fall time td(on) tr td(off) tf VDD=10V, RL=5.5Ω, ID ≈3.6A, VGEN=4.5V,Rg=6Ω 7 15 55 80 16 60 10 25 ns Notes : a. Pulse Test : Pulse width≤300µs, duty cycle ≤2%. b. These parameters have no way to verify. www.umw-ic.com 2 友台半导体有限公司 UMW R UMW IRLML2502 SOT-23 Plastic-Encapsulate MOSFETS Output Characteristics 15 VGS=3.5V,3.0V,2.5V Transfer Characteristics 10 Ta=25℃ Ta=25℃ Pulsed VGS=2.0V Pulsed 8 6 DRAIN CURRENT ID 9 DRAIN CURRENT ID (A) (A) 12 VGS=1.5V 4 2 3 0 6 0 2 4 6 8 DRAIN TO SOURCE VOLTAGE RDS(ON) —— 100 VDS 0 0.0 10 (V) 0.5 1.0 1.5 GATE TO SOURCE VOLTAGE RDS(ON) —— ID 2.0 VGS VGS 0.20 Ta=25℃ Ta=25℃ Pulsed Pulsed 0.16 RDS(ON) 60 ON-RESISTANCE RDS(ON) (mΩ) ( Ω) 80 ON-RESISTANCE 2.5 (V) VGS=2.5V 40 VGS=4.5V 20 0 0.12 0.08 ID=4.5A 0.04 0 5 10 15 DRAIN CURRENT www.umw-ic.com 20 ID 25 0.00 30 0 2 4 6 GATE TO SOURCE VOLTAGE (A) 3 8 VGS 10 (V) 友台半导体有限公司