UMW TLP785GB-S

UMW R UMW TLP785 Photocoupler GaAs IRED & Photo −Transistor Unit: mm TLP785 Office Equipment Household Appliances Solid State Relays Switching Power Supplies Various Controllers Signal Transmission Between Different Voltage Circuits The UMW TLP785 consists of a silicone phototransistor optically coupled to a gallium arsenide (GaAs) infrared emitting diode in a four lead plastic DIP (DIP4) with having high isolation voltage (AC: 5kVRMS (min)). Weight: 0.32 g (typ.) • Collector-emitter voltage: 80V (min.) • Current transfer ratio: 50% (min.) TLP785 Unit: mm Rank GB: 100% (min.) • Isolation voltage: 5000Vrms (min.) • UL approved: UL1577, file No. E492440 Pin Configurations (top view) 1 4 2 3 1 : Anode 2 : Cathode 3 : Emitter 4 : Collector Weight: www.umw-ic.com 1 0.31g (typ.) 友台半导体有限公司 UMW R UMW TLP785 Current Transfer Ratio Type TLP785 Classification (Note 1) Current Transfer Ratio (%) (IC / IF) IF = 5mA, VCE = 5V, Ta = 25°C Min Max Marking of Classification None 50 600 Blank Rank Y 50 150 YE Rank GR 100 300 GR Rank BL 200 600 BL Rank GB 100 600 GB Rank YH 75 150 Y+ Rank GRL 100 200 G Rank GRH 150 300 G+ Rank BLL 200 400 B (Note 1): Ex. rank GB: TLP785 (GB) (Note 2): Application type name for certification test, please use standard product type name, i. e. TLP785 (GB): TLP785 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit IF 60 mA ΔIF / °C −0.7 mA / °C IFP 1 A PD 100 mW ΔPD / °C −0.9 mW / °C Reverse voltage VR 5 V Junction temperature Tj 125 °C Collector−emitter voltage VCEO 80 V Emitter−collector voltage VECO 7 V Collector current IC 80 mA Power dissipation (single circuit) PC 150 mW ΔPC / °C −1.5 mW / °C Tj 125 °C Operating temperature range Topr −55 to 110 °C Storage temperature range Tstg −55 to 125 °C Lead soldering temperature (10s) Tsol 260 °C Total package power dissipation PT 200 mW ΔPT / °C −2.4 mW / °C BVS 5000 Vrms Forward current Forward current derating (Ta ≥ 39°C) LED Pulse forward current (Note 3) Power dissipation Detector Power dissipation derating Power dissipation derating (Ta ≥ 25°C) Junction temperature Total package power dissipation derating (Ta ≥ 25°C) Isolation voltage (Note 4) (Note 3): 100 μs pulse, 100 Hz frequency (Note 4): AC, 1 min., R.H.≤ 60%. Apply voltage to LED pin and detector pin together. www.umw-ic.com 2 友台半导体有限公司 UMW R UMW TLP785 Recommended Operating Conditions (Note) Characteristic Symbol Min Typ. Max Unit Supply voltage VCC ― 5 24 V Forward current IF ― 16 25 mA Collector current IC ― 1 10 mA Topr −25 ― 85 °C Operating temperature (Note): Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Individual Electrical Characteristics (Ta = 25°C) Detector LED Characteristic Test Condition Symbol Min Typ. Max Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5 V ― ― 10 μA Capacitance CT V = 0V, f = 1 MHz ― 30 ― pF Collector−emitter breakdown voltage V(BR) CEO IC = 0.5 mA 80 ― ― V Emitter−collector breakdown voltage V(BR) ECO IE = 0.1 mA 7 ― ― V VCE = 24 V ― 0.01 0.1 μA VCE = 24 V ,Ta = 85°C ― 0.6 50 μA V = 0V, f = 1 MHz ― 6 ― pF Min Typ. Max Unit 50 ― 600 100 ― 600 ― 60 ― 30 ― ― ― ― 0.4 ― 0.2 ― ― ― 0.4 Min Typ. Max Unit ― 0.8 ― pF ― Ω Collector dark current Capacitance (collector to emitter) ID(ICEO) CCE Coupled Electrical Characteristics (Ta = 25°C) Characteristic Current transfer ratio Saturated CTR Test Condition Symbol IC / IF IC / IF (sat) IF = 5 mA, VCE = 5 V IF = 1 mA, VCE = 0.4 V Rank GB Rank GB IC = 2.4 mA, IF = 8 mA Collector−emitter saturation voltage VCE (sat) IC = 0.2 mA, IF = 1 mA Rank GB % % V Isolation Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Capacitance (input to output) CS VS = 0V, f = 1 MHz Isolation resistance RS VS = 500 V AC, 1 minute Isolation voltage www.umw-ic.com BVS 12 1×10 10 14 5000 ― ― AC, 1 second, in oil ― 10000 ― DC, 1 minute, in oil ― 10000 ― 3 Vrms Vdc 友台半导体有限公司 UMW R UMW TLP785 Switching Characteristics (Ta = 25°C) Characteristics Symbol Rise time tr Fall time tf Turn−on time ton Turn−off time toff Turn−on time ton Storage time ts Turn−off time toff Test Condition VCC = 10 V, IC = 2 mA RL = 100Ω RL = 1.9 kΩ VCC = 5 V, IF = 16 mA (fig. 1) Min Typ. Max ― 2 ― ― 3 ― ― 3 ― ― 3 ― ― 1.5 ― ― 25 ― ― 50 ― Unit μs μs IF IF RL VCC ts VCE VCC 4.5V VCE 0.5V ton toff (fig. 1): Switching time test circuit www.umw-ic.com 4 友台半导体有限公司 UMW R UMW TLP785 1. Product Naming System Type of package used for shipment is denoted by a symbol suffix after a product number. The method of classification is as below. (Example) TLP785 (BL− S SMD CTR Rank Device name 2. Tape Dimensions 2.1 Orientation of Device in Relation to Direction of Tape Movement Device orientation in the recesses is as shown in Figure 2. Tape feed 1pin indication Figure2 Device Orientation 2.2 Tape Packing Quantity:2000 devices per reel www.umw-ic.com 5 友台半导体有限公司 UMW R UMW TLP785 I F - Ta 100 P C - Ta 200 PC (mW) This curve shows the maximum limit to the forward current. 60 Collector power dissipation Forward current I F (mA) 80 40 20 0 -20 0 20 40 60 Ambient temperature 80 Ta 100 120 160 120 80 This curve shows the 40 maximum limit to the collector power dissipation. 0 -20 0 20 60 80 Ambient temperature (˚C) Ta 100 120 (˚C) IF-VF ∆ V F / ∆ Ta - I F 100 -3 Ta=25˚C (mA) -2.6 10 IF -2.2 -1.8 Forward current Forward voltage temperature coefficient ΔVF/ΔTa (mV/°C) 40 -1.4 -1 1 0.1 -0.6 0.1 1 Forward current 10 IF 0.4 100 (mA) 0.9 1.4 Forward voltage VF 1.9 (V) IFP – VFP 1000 Pulse width≤10μs (mA) Repetitive frequency=100Hz IFP 100 Pulse forward current Ta=25°C 10 1 0 0.4 0.8 1.2 Pulse forward voltage www.umw-ic.com 6 1.6 VFP 2 2.4 (V) 友台半导体有限公司 UMW R UMW TLP785 IC-VCE I C E O - Ta 10 80 Ta=25˚C (mA) 1 60 50 30 IC 0.1 Collector current Collector dark current ID (mA) VCE =24V 0.01 0.001 20 15 40 10 20 5 I F= 2 m A 0.0001 0 0 20 40 60 Ambient temperature 80 100 0 2 4 6 8 Collector-emitter voltage Ta (°C) VCE 10 (V) IC-IF IC-VCE 100 40 Ta=25˚C Ta=25˚C 30 20 Collector current IC Collector current (mA) 30 IC (mA) 50 15 20 10 5 10 10 1 I F= 2 m A 0 0 0.2 0.4 0.6 0.8 Collector-emitter voltage 1 VCE 0.1 1.2 (V) VCE=5V VCE=0.4V 0.01 0.1 1 10 Collector-emitter voltage IC/IF -IF VCE 100 (V) 1000 Current transfer ratio IC / IF (%) Ta=25˚C 100 10 VCE=5V VCE=0.4V 1 0.1 1 Forward current www.umw-ic.com 10 IF 100 (mA) 7 友台半导体有限公司 UMW R UMW TLP785 I C - Ta V C E ( s a t ) - Ta 100 0.2 IF=5mA, 20 Collector-Emitter saturation Voltage VCE(sat) (V) Collector current IC (mA) 10 5 10 1 1 IF=0.5mA VCE=5V IC=1mA 0.16 0.12 0.08 0.04 0 0.1 -40 -20 0 20 40 Ambient temperature 60 Ta 80 -40 100 -20 0 20 40 Ambient temperature (°C) 60 Ta 80 100 (°C) Switching time - RL 1000 Ta=25˚C IF=16mA VCC=5V toff Switching time (μs) 100 ts 10 ton 1 1 10 Load resistance www.umw-ic.com 100 RL (kΩ) 8 友台半导体有限公司