BUK9Y1R3-40HX

BUK9Y1R3-40H N-channel 40 V, 1.3 mΩ logic level MOSFET in LFPAK56 31 May 2018 Product data sheet 1. General description Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a robust LFPAK56 package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance. 2. Features and benefits • Fully automotive qualified to AEC-Q101: • • 175 °C rating suitable for thermally demanding environments Trench 9 Superjunction technology: • • Reduced cell pitch enables enhanced power density and efficiency with lower RDSon in same footprint • Improved SOA and avalanche capability compared to standard TrenchMOS • Tight VGS(th) limits enable easy paralleling of MOSFETs LFPAK Gull Wing leads: • • High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike traditional QFN packages • Visual (AOI) soldering inspection, no need for expensive x-ray equipment • Easy solder wetting for good mechanical solder joint LFPAK copper clip technology: • • Improved reliability, with reduced Rth and RDSon Increases maximum current capability and improved current spreading 3. Applications • • • • • 12 V automotive systems Motors, lamps and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - - 40 V ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 2 - - 190 A Ptot total power dissipation Tmb = 25 °C; Fig. 1 - - 395 W [1] BUK9Y1R3-40H Nexperia N-channel 40 V, 1.3 mΩ logic level MOSFET in LFPAK56 Symbol Parameter Conditions Min Typ Max Unit VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 11 0.67 0.96 1.3 mΩ ID = 25 A; VDS = 20 V; VGS = 4.5 V; Fig. 13; Fig. 14 - 11.2 22.4 nC IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 20 V; Tj = 25 °C; Fig. 17 - 38.8 - nC - 0.8 - Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD gate-drain charge Source-drain diode Qr recovered charge S softness factor [1] 190A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB, thermal design and operating temperature 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 S source 2 S source 3 S source 4 G gate mb D Simplified outline Graphic symbol D mb G mbb076 mounting base; connected to drain S 1 2 3 4 LFPAK56; PowerSO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number BUK9Y1R3-40H Package Name Description Version LFPAK56; Power-SO8 plastic, single-ended surface-mounted package; 4 terminals SOT669 7. Marking Table 4. Marking codes Type number Marking code BUK9Y1R3-40H 91H340 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). BUK9Y1R3-40H Product data sheet All information provided in this document is subject to legal disclaimers. 31 May 2018 © Nexperia B.V. 2018. All rights reserved 2 / 12 BUK9Y1R3-40H Nexperia N-channel 40 V, 1.3 mΩ logic level MOSFET in LFPAK56 Symbol Parameter Conditions Min Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - 40 V VGS gate-source voltage DC; Tj ≤ 175 °C -10 16 V Ptot total power dissipation Tmb = 25 °C; Fig. 1 - 395 W ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 2 [1] - 190 A VGS = 10 V; Tmb = 100 °C; Fig. 2 [1] - 190 A - 600 A IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3 Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C - 145 A - 600 A - 154 mJ Source-drain diode IS source current Tmb = 25 °C [2] ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C Avalanche ruggedness EDS(AL)S [1] [2] [3] [4] non-repetitive drainsource avalanche energy ID = 190 A; Vsup ≤ 40 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped; Fig. 4 [3] [4] 190A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB, thermal design and operating temperature 145A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB, thermal design and operating temperature Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. Refer to application note AN10273 for further information. 03aa16 120 aaa-025649 400 ID (A) Pder (%) 300 80 200 (1) 40 100 0 Fig. 1. 0 50 100 150 Tmb (°C) 0 200 Fig. 2. Product data sheet 25 50 75 100 125 150 175 Tmb (°C) 200 VGS ≥ 10 V (1) 190A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB, thermal design and operating temperature. Normalized total power dissipation as a function of mounting base temperature BUK9Y1R3-40H 0 Continuous drain current as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. 31 May 2018 © Nexperia B.V. 2018. All rights reserved 3 / 12 BUK9Y1R3-40H Nexperia N-channel 40 V, 1.3 mΩ logic level MOSFET in LFPAK56 ID (A) aaa-027653 103 tp = 10 µs Limit RDSon = VDS / ID 100 µs 102 DC 10 1 ms 10 ms 100 ms 1 10-1 10-1 1 10 102 VDS (V) Tmb = 25 °C; IDM is a single pulse Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage IAL (A) aaa-026107 103 102 (1) (2) 10 (3) 1 10-1 10-3 10-2 10-1 1 tAL (ms) 10 (1) Tj (init) = 25 °C; (2) Tj (init) = 150 °C; (3) Repetitive Avalanche Fig. 4. Avalanche rating; avalanche current as a function of avalanche time 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base Fig. 5 - 0.29 0.38 K/W BUK9Y1R3-40H Product data sheet All information provided in this document is subject to legal disclaimers. 31 May 2018 © Nexperia B.V. 2018. All rights reserved 4 / 12 BUK9Y1R3-40H Nexperia N-channel 40 V, 1.3 mΩ logic level MOSFET in LFPAK56 aaa-027654 1 Zth(j-mb) (K/W) δ = 0.5 10-1 0.2 0.1 0.05 10-2 P 0.02 δ= tp T single shot t tp 10-3 10-6 Fig. 5. 10-5 10-4 10-3 10-2 T 10-1 1 tp (s) Transient thermal impedance from junction to mounting base as a function of pulse duration 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit ID = 250 µA; VGS = 0 V; Tj = 25 °C 40 43 - V ID = 250 µA; VGS = 0 V; Tj = -40 °C - 40.5 - V ID = 250 µA; VGS = 0 V; Tj = -55 °C 36 40 - V ID = 1 mA; VDS=VGS; Tj = 25 °C; Fig. 9; Fig. 10 1.35 1.62 2.05 V ID = 1 mA; VDS=VGS; Tj = 175 °C; Fig. 10 0.6 - - V ID = 1 mA; VDS=VGS; Tj = -55 °C; Fig. 10 - - 2.5 V VDS = 40 V; VGS = 0 V; Tj = 25 °C - 0.4 1 µA VDS = 16 V; VGS = 0 V; Tj = 125 °C - 2.4 10 µA VDS = 40 V; VGS = 0 V; Tj = 175 °C - 0.34 1 mA VGS = 16 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = -10 V; VDS = 0 V; Tj = 25 °C - 2 100 nA Static characteristics V(BR)DSS VGS(th) IDSS IGSS drain-source breakdown voltage gate-source threshold voltage drain leakage current gate leakage current BUK9Y1R3-40H Product data sheet All information provided in this document is subject to legal disclaimers. 31 May 2018 © Nexperia B.V. 2018. All rights reserved 5 / 12 BUK9Y1R3-40H Nexperia N-channel 40 V, 1.3 mΩ logic level MOSFET in LFPAK56 Symbol Parameter Conditions Min Typ Max Unit RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 11 0.67 0.96 1.3 mΩ VGS = 10 V; ID = 25 A; Tj = 105 °C; Fig. 12 1 1.47 2.1 mΩ VGS = 10 V; ID = 25 A; Tj = 125 °C; Fig. 12 1.1 1.6 2.3 mΩ VGS = 10 V; ID = 25 A; Tj = 175 °C; Fig. 12 1.4 2.04 2.8 mΩ VGS = 4.5 V; ID = 25 A; Tj = 25 °C; Fig. 11 0.85 1.21 1.8 mΩ VGS = 4.5 V; ID = 25 A; Tj = 105 °C; Fig. 12 1.26 1.82 2.8 mΩ VGS = 4.5 V; ID = 25 A; Tj = 125 °C; Fig. 12 1.4 1.97 3.1 mΩ VGS = 4.5 V; ID = 25 A; Tj = 175 °C; Fig. 12 1.76 2.5 3.9 mΩ f = 1 MHz; Tj = 25 °C 0.58 1.46 3.65 mΩ ID = 25 A; VDS = 20 V; VGS = 10 V; Fig. 13; Fig. 14 - 99 139 nC ID = 25 A; VDS = 20 V; VGS = 4.5 V; Fig. 13; Fig. 14 - 45.3 63.4 nC - 16.1 24.2 nC - 11.2 22.4 nC - 6978 9769 pF - 1244 1742 pF - 269 592 pF - 36.3 - ns - 42.5 - ns RG gate resistance Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time - 51.8 - ns tf fall time - 30.7 - ns VDS = 25 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C; Fig. 15 VDS = 20 V; RL = 0.8 Ω; VGS = 4.5 V; RG(ext) = 5 Ω Source-drain diode VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 16 - 0.8 1.2 V trr reverse recovery time - 38.7 - ns Qr recovered charge IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 20 V; Tj = 25 °C; Fig. 17 - 38.8 - nC S softness factor - 0.8 - - 0.72 - IS = 25 A; dIS/dt = -500 A/µs; VGS = 0 V; VDS = 20 V; Tj = 25 °C; Fig. 17 BUK9Y1R3-40H Product data sheet All information provided in this document is subject to legal disclaimers. 31 May 2018 © Nexperia B.V. 2018. All rights reserved 6 / 12 BUK9Y1R3-40H Nexperia N-channel 40 V, 1.3 mΩ logic level MOSFET in LFPAK56 aaa-027655 300 ID (A) 250 RDSon (mΩ) 10 V 4.5 V aaa-027656 5 4 VGS = 3 V 200 3 150 2.8 V 2 100 2.6 V 1 50 2.4 V 0 Fig. 6. 0 1 2 3 VDS (V) 0 4 0 2 4 6 8 16 Tj = 25 °C; ID = 25 A Output characteristics; drain current as a Fig. 7. function of drain-source voltage; typical values Drain-source on-state resistance as a function of gate-source voltage; typical values aaa-027657 aaa-027637 10-1 ID (A) 200 10-2 150 10-3 Min 100 175°C 25°C 0 0.5 1 1.5 2 2.5 3 3.5 VGS (V) 10-6 4 0 0.5 1 1.5 2 2.5 VGS (V) 3 Tj = 25 °C; VDS = 5 V Transfer characteristics; drain current as a function of gate-source voltage; typical values Product data sheet Max 10-5 VDS = 8 V BUK9Y1R3-40H Typ 10-4 Tj = -55°C 50 Fig. 8. 12 14 VGS (V) Tj = 25 °C 250 ID (A) 0 10 Fig. 9. Sub-threshold drain current as a function of gate-source voltage All information provided in this document is subject to legal disclaimers. 31 May 2018 © Nexperia B.V. 2018. All rights reserved 7 / 12 BUK9Y1R3-40H Nexperia N-channel 40 V, 1.3 mΩ logic level MOSFET in LFPAK56 aaa-027638 3 VGS(th) (V) 2.5 aaa-027658 10 RDSon (mΩ) 2.6 V 2.8 V 3V 8 Max 2 6 1.5 Typ 4 Min 1 2 0.5 0 -60 -30 0 30 60 90 120 150 Tj (°C) 0 180 ID = 1 mA ; VDS = VGS VGS = 10 V 0 50 100 150 200 250 ID (A) 300 Tj = 25 °C Fig. 10. Gate-source threshold voltage as a function of junction temperature a 4.5 V Fig. 11. Drain-source on-state resistance as a function of drain current; typical values aaa-027640 2.4 VGS (V) 2.1 aaa-027659 10 8 1.8 VGS = 4.5 V 6 1.5 10 V VDS = 14 V 20 V 4 1.2 2 0.9 0.6 -60 -30 0 30 60 90 120 150 Tj (°C) 0 180 0 18.33 36.67 55 73.33 91.67 QG (nC) 110 Tj = 25 °C; ID = 25 A Fig. 12. Normalized drain-source on-state resistance factor as a function of junction temperature BUK9Y1R3-40H Product data sheet Fig. 13. Gate-source voltage as a function of gate charge; typical values All information provided in this document is subject to legal disclaimers. 31 May 2018 © Nexperia B.V. 2018. All rights reserved 8 / 12 BUK9Y1R3-40H Nexperia N-channel 40 V, 1.3 mΩ logic level MOSFET in LFPAK56 aaa-027660 104 C (pF) VDS ID Ciss Coss 103 VGS(pl) VGS(th) Crss VGS QGS2 QGS1 QGS 102 QGD QG(tot) 003aaa508 10 10-1 Fig. 14. Gate charge waveform definitions 1 10 VDS (V) 102 VGS = 0 V; f = 1 MHz Fig. 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 003aaf444 aaa-027661 300 IS (A) 250 ID (A) trr 200 ta 150 tb 0 100 0.25 IRM 175°C 50 0 0 0.2 0.4 0.6 Tj = 25°C 0.8 1 VSD (V) tb S= t a IRM 1.2 t (s) VGS = 0 V Fig. 16. Source-drain (diode forward) current as a function of source-drain (diode forward) voltage; typical values BUK9Y1R3-40H Product data sheet Fig. 17. Reverse recovery waveform definitions All information provided in this document is subject to legal disclaimers. 31 May 2018 © Nexperia B.V. 2018. All rights reserved 9 / 12 BUK9Y1R3-40H Nexperia N-channel 40 V, 1.3 mΩ logic level MOSFET in LFPAK56 11. Package outline Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads E A2 A SOT669 C c2 b2 E1 b3 L1 mounting base b4 D1 D H L2 1 2 3 e 4 w b A X c 1/2 e A (A3) A1 C q L detail X 0 y C θ 5 mm 8° scale 0° Dimensions (mm are the original dimensions) Unit(1) A A1 A2 A3 b b2 max 1.20 0.15 1.10 0.50 4.41 nom 0.25 min 1.01 0.00 0.95 0.35 3.62 mm c c2 D(1) D1(1) E(1) E1(1) b3 b4 2.2 0.9 0.25 0.30 4.10 4.20 5.0 3.3 2.0 0.7 0.19 0.24 3.80 4.8 3.1 e 1.27 H L L1 L2 6.2 0.85 1.3 1.3 5.8 0.40 0.8 0.8 Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. Outline version SOT669 References IEC JEDEC JEITA w y 0.25 0.1 sot669_po European projection Issue date 11-03-25 13-02-27 MO-235 Fig. 18. Package outline LFPAK56; Power-SO8 (SOT669) BUK9Y1R3-40H Product data sheet All information provided in this document is subject to legal disclaimers. 31 May 2018 © Nexperia B.V. 2018. All rights reserved 10 / 12 BUK9Y1R3-40H Nexperia N-channel 40 V, 1.3 mΩ logic level MOSFET in LFPAK56 Suitability for use in automotive applications — This Nexperia product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. 12. Legal information Data sheet status Document status [1][2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. 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In no event shall Nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 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BUK9Y1R3-40H Product data sheet All information provided in this document is subject to legal disclaimers. 31 May 2018 © Nexperia B.V. 2018. All rights reserved 11 / 12 BUK9Y1R3-40H Nexperia N-channel 40 V, 1.3 mΩ logic level MOSFET in LFPAK56 Contents 1. General description......................................................1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Marking.......................................................................... 2 8. Limiting values............................................................. 2 9. Thermal characteristics............................................... 4 10. Characteristics............................................................ 5 11. Package outline........................................................ 10 12. Legal information.......................................................11 © Nexperia B.V. 2018. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 31 May 2018 BUK9Y1R3-40H Product data sheet All information provided in this document is subject to legal disclaimers. 31 May 2018 © Nexperia B.V. 2018. All rights reserved 12 / 12 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Nexperia: BUK9Y1R3-40HX