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In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
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Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
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Team Nexperia
PBHV9115TLH
150 V, 1 A PNP high-voltage low VCEsat BISS transistor
16 January 2017
Product data sheet
1. General description
PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBHV8115TLH
2. Features and benefits
•
•
•
•
•
High voltage
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
Small SMD plastic package
AEC-Q101 qualified
3. Applications
•
•
•
•
Power management
LCD backlighting
LED driver for LED chain module
Switch Mode Power Supply (SMPS)
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter
voltage
open base
-
-
-150
V
IC
collector current
-
-
-1
A
ICM
peak collector current
single pulse; tp ≤ 1 ms
-
-
-2
A
hFE
DC current gain
VCE = -10 V; IC = -50 mA; Tamb = 25 °C
70
-
300
PBHV9115TLH
NXP Semiconductors
150 V, 1 A PNP high-voltage low VCEsat BISS transistor
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
B
base
2
E
emitter
3
C
collector
Simplified outline
Graphic symbol
3
C
B
E
1
sym132
2
TO-236AB (SOT23)
6. Ordering information
Table 3. Ordering information
Type number
PBHV9115TLH
Package
Name
Description
Version
TO-236AB
plastic surface-mounted package; 3 leads
SOT23
7. Marking
Table 4. Marking codes
[1]
Type number
Marking code
PBHV9115TLH
FC%
[1]
% = placeholder for manufacturing site code
PBHV9115TLH
Product data sheet
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PBHV9115TLH
NXP Semiconductors
150 V, 1 A PNP high-voltage low VCEsat BISS transistor
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
-200
V
VCEO
collector-emitter voltage
open base
-
-150
V
VCESM
collector-emitter peak
voltage
VBE = 0 V
-
-200
V
VEBO
emitter-base voltage
open collector
-
-6
V
IC
collector current
-
-1
A
ICM
peak collector current
-
-2
A
IBM
peak base current
-
-400
mA
-
300
mW
single pulse; tp ≤ 1 ms
[1]
Ptot
total power dissipation
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
[1]
Tamb ≤ 25 °C
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
006aab150
400
Ptot
(mW)
300
200
100
0
- 75
- 25
25
75
125
175
Tamb (°C)
FR4 PCB, standard footprint
Fig. 1.
Power derating curve
PBHV9115TLH
Product data sheet
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PBHV9115TLH
NXP Semiconductors
150 V, 1 A PNP high-voltage low VCEsat BISS transistor
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance
from junction to
ambient
Rth(j-sp)
thermal resistance
from junction to solder
point
[1]
[1]
in free air
Min
Typ
Max
Unit
-
-
417
K/W
-
-
70
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
006aab151
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.33
0.5
0.2
0.1
0.05
10
1
0.02
0.01
0
10- 1
10- 5
10- 4
10- 3
10- 2
10- 1
1
102
10
tp (s)
103
FR4 PCB, standard footprint
Fig. 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBHV9115TLH
Product data sheet
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PBHV9115TLH
NXP Semiconductors
150 V, 1 A PNP high-voltage low VCEsat BISS transistor
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ICBO
collector-base cut-off
current
VCB = -120 V; IE = 0 A; Tamb = 25 °C
-
-
-100
nA
VCB = -120 V; IE = 0 A; Tj = 150 °C
-
-
-10
µA
ICES
collector-emitter cut-off VCE = -120 V; VBE = 0 V; Tamb = 25 °C
current
-
-
-100
nA
IEBO
emitter-base cut-off
current
VEB = -5 V; IC = 0 A; Tamb = 25 °C
-
-
-100
nA
hFE
DC current gain
VCE = -10 V; IC = -50 mA; Tamb = 25 °C
70
-
300
VCE = -10 V; IC = -100 mA;
Tamb = 25 °C
60
-
300
VCE = -10 V; IC = -500 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02 ; Tamb = 25 °C
50
-
300
VCE = -10 V; IC = -1 A; pulsed; tp ≤
300 µs; δ ≤ 0.02 ; Tamb = 25 °C
10
-
-
IC = -100 mA; IB = -10 mA;
Tamb = 25 °C
-
-
-120
mV
IC = -100 mA; IB = -20 mA;
Tamb = 25 °C
-
-
-100
mV
IC = -500 mA; IB = -100 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02 ; Tamb = 25 °C
-
-
-300
mV
VCEsat
collector-emitter
saturation voltage
VBEsat
base-emitter saturation IC = -1 A; IB = -200 mA; pulsed; tp ≤
voltage
300 µs; δ ≤ 0.02 ; Tamb = 25 °C
-
-
-1.2
V
td
delay time
-
10
-
ns
tr
rise time
-
285
-
ns
ton
turn-on time
-
295
-
ns
ts
storage time
-
430
-
ns
tf
fall time
-
300
-
ns
toff
turn-off time
-
730
-
ns
fT
transition frequency
VCE = -10 V; IC = -10 mA; f = 100 MHz;
Tamb = 25 °C
-
55
-
MHz
Cc
collector capacitance
VCB = -20 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
-
10
-
pF
Ce
emitter capacitance
VEB = -0.5 V; IC = 0 A; ic = 0 A;
f = 1 MHz; Tamb = 25 °C
-
150
-
pF
PBHV9115TLH
Product data sheet
VCC = -6 V; IC = -0.5 A; IBon = -0.1 mA;
IBoff = 0.1 mA; Tamb = 25 °C
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PBHV9115TLH
NXP Semiconductors
150 V, 1 A PNP high-voltage low VCEsat BISS transistor
aaa-026066
300
aaa-026067
-2.0
-400
IC
(A)
hFE
-360
-240
-1.6
(1)
-280
-200
-160
200
-120
-1.2
-80
(2)
-0.8
100
-320
IB (mA) = -40
(3)
-0.4
0
-10-1
-1
-10
-102
0
-103
-104
IC (mA)
-1
-2
-3
-4
VCE (V)
-5
Tamb = 25 °C
VCE = -10 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 3.
0
Fig. 4.
Collector current as a function of collectoremitter voltage; typical values
DC current gain as a function of collector
current; typical values
aaa-026068
-1.2
aaa-026069
-1.2
VBE
(V)
VBEsat
(V)
-0.9
(1)
(1)
-0.6
-0.8
(2)
(2)
(3)
(3)
-0.4
-0.3
0
-10-1
-1
-10
-102
0
-10-1
-103
-104
IC (mA)
VCE = -10 V
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig. 5.
Product data sheet
-102
-10
-103
-104
IC (mA)
IC/IB = 5
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Base-emitter voltage as a function of collector
current; typical values
PBHV9115TLH
-1
Fig. 6.
Base-emitter saturation voltage as a function of
collector current; typical values
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PBHV9115TLH
NXP Semiconductors
150 V, 1 A PNP high-voltage low VCEsat BISS transistor
aaa-026070
-10
aaa-026071
-10
VCEsat
(V)
VCEsat
(V)
-1
-1
(1)
(1)
(2)
(2)
-10-1
-10-1
(3)
-10-2
-10-1
-1
-10
-102
-10-2
-10-1
-103
-104
IC (mA)
IC/IB = 5
(1) Tamb =100 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Fig. 7.
-1
-102
-10
-103
-104
IC (mA)
Tamb = 25 °C
(1) IC/IB = 20
(2) IC/IB = 10
Collector-emitter saturation voltage as a
function of collector current; typical values
aaa-026072
103
Fig. 8.
Collector-emitter saturation voltage as a
function of collector current; typical values
aaa-026073
104
RCEsat
(Ω)
RCEsat
(Ω)
103
102
102
(1)
10
(2)
10
(3)
1
10-1
-10-1
-1
-10
-102
10-1
-10-1
-103
-104
IC (mA)
IC/IB = 5
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 9.
(1)
1
Product data sheet
-102
-10
-103
-104
IC (mA)
Tamb = 25 °C
(1) IC/IB = 20
(2) IC/IB = 10
Collector-emitter saturation resistance as a
function of collector current; typical values
PBHV9115TLH
-1
(2)
Fig. 10. Collector-emitter saturation resistance as a
function of collector current; typical values
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PBHV9115TLH
NXP Semiconductors
150 V, 1 A PNP high-voltage low VCEsat BISS transistor
11. Test information
- IB
input pulse
(idealized waveform)
90 %
- I Bon (100 %)
10 %
- I Boff
output pulse
(idealized waveform)
- IC
90 %
- I C (100 %)
10 %
t
td
ts
tr
t on
tf
t off
006aaa266
Fig. 11. BISS transistor switching time definition
VBB
RB
VCC
RC
Vo
(probe)
oscilloscope
450 Ω
(probe)
450 Ω
R2
VI
oscilloscope
DUT
R1
mgd624
Fig. 12. Test circuit for switching times
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
PBHV9115TLH
Product data sheet
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PBHV9115TLH
NXP Semiconductors
150 V, 1 A PNP high-voltage low VCEsat BISS transistor
12. Package outline
3.0
2.8
1.1
0.9
3
0.45
0.15
2.5 1.4
2.1 1.2
1
2
0.48
0.38
1.9
Dimensions in mm
0.15
0.09
04-11-04
Fig. 13. Package outline TO-236AB (SOT23)
13. Soldering
3.3
2.9
1.9
solder lands
3
solder resist
2
1.7
solder paste
occupied area
0.6
(3×)
0.7
(3×)
Dimensions in mm
0.5
(3×)
0.6
(3×)
1
sot023_fr
Fig. 14. Reflow soldering footprint for TO-236AB (SOT23)
PBHV9115TLH
Product data sheet
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PBHV9115TLH
NXP Semiconductors
150 V, 1 A PNP high-voltage low VCEsat BISS transistor
2.2
1.2
(2×)
1.4
(2×)
solder lands
4.6
solder resist
2.6
occupied area
Dimensions in mm
1.4
preferred transport direction during soldering
2.8
4.5
sot023_fw
Fig. 15. Wave soldering footprint for TO-236AB (SOT23)
PBHV9115TLH
Product data sheet
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PBHV9115TLH
NXP Semiconductors
150 V, 1 A PNP high-voltage low VCEsat BISS transistor
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PBHV9115TLH v.1
20170116
Product data sheet
-
-
PBHV9115TLH
Product data sheet
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PBHV9115TLH
NXP Semiconductors
150 V, 1 A PNP high-voltage low VCEsat BISS transistor
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
15. Legal information
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Data sheet status
Document
[1] [2]
status
Product
[3]
status
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
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information included herein and shall have no liability for the consequences
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Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
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data sheet shall define the specification of the product as agreed between
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customer have explicitly agreed otherwise in writing. In no event however,
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is deemed to offer functions and qualities beyond those described in the
Product data sheet.
Disclaimers
Limited warranty and liability — Information in this document is believed
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In no event shall NXP Semiconductors be liable for any indirect, incidental,
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or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
PBHV9115TLH
Product data sheet
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes
no representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their
applications and products using NXP Semiconductors products, and NXP
Semiconductors accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
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customer’s applications and products planned, as well as for the planned
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associated with their applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
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Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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products are sold subject to the general terms and conditions of commercial
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PBHV9115TLH
NXP Semiconductors
150 V, 1 A PNP high-voltage low VCEsat BISS transistor
Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip,
HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE,
MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP
Semiconductors N.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
PBHV9115TLH
Product data sheet
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PBHV9115TLH
NXP Semiconductors
150 V, 1 A PNP high-voltage low VCEsat BISS transistor
16. Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 4
10. Characteristics............................................................ 5
11. Test information......................................................... 8
12. Package outline.......................................................... 9
13. Soldering..................................................................... 9
14. Revision history........................................................11
15. Legal information..................................................... 12
©
NXP Semiconductors N.V. 2017. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 16 January 2017
PBHV9115TLH
Product data sheet
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