PMBT3904QA
40 V, 200 mA NPN switching transistor
29 August 2018
Product data sheet
1. General description
NPN switching transistor in an ultra small DFN1010D-3 (SOT1215) leadless Surface-Mounted
Device (SMD) plastic package with visible and solderable side pads.
2. Features and benefits
•
•
•
•
Leadless ultra small SMD plastic package
Low package height of 0.37 mm
Suitable for Automatic Optical Inspection (AOI) of solder joint
Power dissipation comparable to SOT23
3. Applications
•
General-purpose switching and amplification
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter
voltage
open base
-
-
40
V
IC
collector current
-
-
200
mA
hFE
DC current gain
100
180
300
VCE = 1 V; IC = 10 mA
PMBT3904QA
Nexperia
40 V, 200 mA NPN switching transistor
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
B
base
2
E
emitter
3
C
collector
4
C
collector
Simplified outline
Graphic symbol
C
1
B
4
3
E
sym123
2
Transparent top view
DFN1010D-3
(SOT1215)
6. Ordering information
Table 3. Ordering information
Type number
Package
PMBT3904QA
Name
Description
Version
DFN1010D-3
plastic, leadless thermal enhanced ultra thin small outline
SOT1215
package; 3 terminals; 0.75 mm pitch; 1.1 mm x 1 mm x 0.37 mm
body
7. Marking
Table 4. Marking codes
Type number
Marking code
PMBT3904QA
X 110
MARKING CODE
(EXAMPLE)
READING
DIRECTION
YEAR DATE
CODE
PIN 1
INDICATION MARK
VENDOR CODE
READING EXAMPLE:
MARK-FREE AREA
A 110
aaa-020723
Fig. 1.
DFN1010D-3 (SOT1215) binary marking code description
PMBT3904QA
Product data sheet
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PMBT3904QA
Nexperia
40 V, 200 mA NPN switching transistor
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
60
V
VCEO
collector-emitter voltage
open base
-
40
V
VEBO
emitter-base voltage
open collector
-
6
V
IC
collector current
-
200
mA
ICM
peak collector current
-
200
mA
IBM
peak base current
-
100
mA
Ptot
total power dissipation
[1] [2]
-
280
mW
[3] [2]
-
440
mW
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
[1]
[2]
[3]
single pulse; tp ≤ 1 ms
Tamb ≤ 25 °C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Reflow soldering is the only recommended soldering method.
Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
aaa-017637
500
Ptot
(mW)
(1)
400
300
(2)
200
100
0
-75
-25
25
75
125
175
Tamb (°C)
(1) FR4 PCB, 4-layer copper, standard footprint
(2) FR4 PCB, standard footprint
Fig. 2.
Power derating curves
PMBT3904QA
Product data sheet
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PMBT3904QA
Nexperia
40 V, 200 mA NPN switching transistor
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Rth(j-a)
[1]
[2]
[3]
Conditions
thermal resistance from in free air
junction to ambient
Min
Typ
Max
Unit
[1] [2]
-
-
447
K/W
[3] [2]
-
-
285
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Reflow soldering is the only recommended soldering method.
Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
aaa-017638
103
duty cycle = 1
Zth(j-a)
(K/W)
0.75
0.50
102
0.33
0.20
0.10
0.05
10
0.02
0.01
0
1
10-5
10-4
10-3
10-2
10-1
1
10
102
tp (s)
103
FR4 PCB, single-sided copper, tin-plated and standard footprint
Fig. 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-017639
103
Zth(j-a)
(K/W)
duty cycle = 1
0.75
102
0.33
0.50
0.20
0.10
10
0.05
0.02
0
0.01
1
10-5
10-4
10-3
10-2
10-1
1
10
102
tp (s)
103
FR4 PCB, 4-layer copper, tin-plated and standard footprint.
Fig. 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMBT3904QA
Product data sheet
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PMBT3904QA
Nexperia
40 V, 200 mA NPN switching transistor
10. Characteristics
Table 7. Characteristics
Tamb = 25 °C unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V(BR)CBO
collector-base
breakdown voltage
IC = 100 µA; IE = 0 A
60
-
-
V
V(BR)CEO
collector-emitter
breakdown voltage
IC = 1 mA; IB = 0 A
40
-
-
V
V(BR)EBO
emitter-base
breakdown voltage
IC = 0 A; IE = 100 µA
6
-
-
V
ICBO
collector-base cut-off
current
VCB = 30 V; IE = 0 A
-
-
50
nA
IEBO
emitter-base cut-off
current
VEB = 6 V; IC = 0 A
-
-
50
nA
hFE
DC current gain
VCE = 1 V; IC = 100 µA
60
180
-
VCE = 1 V; IC = 1 mA
80
180
-
VCE = 1 V; IC = 10 mA
100
180
300
VCE = 1 V; IC = 50 mA
60
105
-
VCE = 1 V; IC = 100 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02
30
50
-
IC = 10 mA; IB = 1 mA
-
75
200
mV
IC = 50 mA; IB = 5 mA
-
120
300
mV
VCEsat
collector-emitter
saturation voltage
VBEsat
base-emitter saturation IC = 10 mA; IB = 1 mA
voltage
IC = 50 mA; IB = 5 mA
650
750
850
mV
-
850
950
mV
td
delay time
-
-
35
ns
tr
rise time
-
-
35
ns
ton
turn-on time
-
-
70
ns
ts
storage time
-
-
200
ns
tf
fall time
-
-
50
ns
toff
turn-off time
-
-
250
ns
Cc
collector capacitance
VCB = 5 V; IE = 0 A; ie = 0 A; f = 1 MHz
-
-
4
pF
Ce
emitter capacitance
VEB = 500 mV; IC = 0 A; ic = 0 A;
f = 1 MHz
-
-
8
pF
fT
transition frequency
VCE = 20 V; IC = 10 mA; f = 100 MHz
300
-
-
MHz
PMBT3904QA
Product data sheet
IC = 10 mA; IBon = 1 mA; IBoff = -1 mA
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PMBT3904QA
Nexperia
40 V, 200 mA NPN switching transistor
aaa-028725
300
hFE
006aab116
0.20
IC
(A)
(1)
IB (mA) = 5.0
4.5
4.0
3.5
3.0
2.5
0.15
200
2.0
1.5
(2)
1.0
0.10
0.5
(3)
100
0.05
0
10-1
1
10
102
IC (mA)
0.0
103
VCE = 1 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 5.
0
2
4
6
8
VCE (V)
10
Tamb = 25 °C
Fig. 6.
Collector current as a function of collectoremitter voltage; typical values
DC current gain as a function of collector
current; typical values
006aab117
1.2
VBE
(V)
VBEsat
(V)
(1)
0.8
006aab118
1.3
(1)
0.9
(2)
(2)
(3)
0.4
0
10- 1
1
10
102
IC (mA)
0.1
10- 1
103
VCE = 1 V
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig. 7.
Product data sheet
1
10
102
IC (mA)
103
IC/IB = 10
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Base-emitter voltage as a function of collector
current; typical values
PMBT3904QA
(3)
0.5
Fig. 8.
Base-emitter saturation voltage as a function of
collector current; typical values
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PMBT3904QA
Nexperia
40 V, 200 mA NPN switching transistor
006aab119
1
VCEsat
(V)
(1)
(2)
10- 1
(3)
10- 2
10- 1
1
10
102
IC (mA)
103
IC/IB = 10
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 9.
Collector-emitter saturation voltage as a function of collector current; typical values
PMBT3904QA
Product data sheet
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PMBT3904QA
Nexperia
40 V, 200 mA NPN switching transistor
11. Test information
IB
input pulse
(idealized waveform)
90 %
IBon (100 %)
10 %
IBoff
output pulse
(idealized waveform)
IC
90 %
IC (100 %)
10 %
t
td
ts
tr
ton
tf
toff
006aaa003
Fig. 10. Transistor switching time definition
VBB
RB
VCC
RC
Vo
(probe)
oscilloscope
450 Ω
(probe)
450 Ω
R2
VI
oscilloscope
DUT
R1
mlb826
Fig. 11. Test circuit for switching times
PMBT3904QA
Product data sheet
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PMBT3904QA
Nexperia
40 V, 200 mA NPN switching transistor
12. Package outline
DFN1010D-3: plastic thermal enhanced ultra thin small outline package; no leads;
3 terminals; body: 1.1 x 1.0 x 0.37 mm
SOT1215
visible depend upon
used manufacturing
technology (2x)
solderable lead
end, protrusion
max. 0.02 mm (3x)
pin 1
index area
visible depend upon
used manufacturing
technology (4x)
e
b (2x)
1
2
L (2x)
E
E1
e1
L1
D
A1
3
b1
A
D1
0
1 mm
scale
Dimensions (mm are the original dimensions)
Unit
mm
A
A1
b
b1
D
D1
E
E1
e
e1
min 0.34
0.22 0.245 1.05 0.87 0.95 0.16
nom 0.37
0.25 0.275 1.10 0.90 1.00 0.19 0.75
max 0.40 0.04 0.30 0.325 1.15 0.95 1.05 0.24
0.1
L
L1
0.17 0.195
0.20 0.225
0.25 0.275
Note
1. Dimension A is including plating thickness.
Outline
version
sot1215_po
References
IEC
JEDEC
JEITA
European
projection
Issue date
13-03-05
13-03-06
SOT1215
Fig. 12. Package outline DFN1010D-3 (SOT1215)
PMBT3904QA
Product data sheet
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PMBT3904QA
Nexperia
40 V, 200 mA NPN switching transistor
13. Soldering
Footprint information for reflow soldering of DFN1010D-3 package
SOT1215
1.2
0.45 (2x)
0.3
1.1
0.35 (2x)
0.4
0.25 (2x)
0.75
0.3
0.5
1.5
1.4
0.4
0.5
0.4
0.3
0.5
1.3
0.4
0.3
0.4
0.5
1.3
solder land
solder land plus solder paste
occupied area
solder resist
Dimensions in mm
Issue date
12-11-23
13-03-06
sot1215_fr
Fig. 13. Reflow soldering footprint for DFN1010D-3 (SOT1215)
PMBT3904QA
Product data sheet
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Nexperia
40 V, 200 mA NPN switching transistor
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PMBT3904QA v.1
Product data sheet
-
-
PMBT3904QA
Product data sheet
20180829
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40 V, 200 mA NPN switching transistor
15. Legal information
injury, death or severe property or environmental damage. Nexperia and its
suppliers accept no liability for inclusion and/or use of Nexperia products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
Data sheet status
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Document status
[1][2]
Product
status [3]
Definition
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Preliminary [short]
data sheet
Qualification
This document contains data from
the preliminary specification.
Product [short]
data sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.
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modifications or additions. Nexperia does not give any representations or
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with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
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PMBT3904QA
Product data sheet
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability for
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or problem which is based on any weakness or default in the customer’s
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liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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In the event that customer uses the product for design-in and use in
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PMBT3904QA
Nexperia
40 V, 200 mA NPN switching transistor
Contents
1. General description...................................................... 1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 4
10. Characteristics............................................................ 5
11. Test information.......................................................... 8
12. Package outline.......................................................... 9
13. Soldering................................................................... 10
14. Revision history........................................................11
15. Legal information......................................................12
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Nexperia B.V. 2018. All rights reserved
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Date of release: 29 August 2018
PMBT3904QA
Product data sheet
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