HEF4082B
Dual 4-input AND gate
Rev. 6 — 28 May 2015
Product data sheet
1. General description
The HEF4082B is a dual 4-input AND gate. The outputs are fully buffered for highest
noise immunity and pattern insensitivity to output impedance variations.
It operates over a recommended VDD power supply range of 3 V to 15 V referenced to VSS
(usually ground). Unused inputs must be connected to VDD, VSS, or another input.
2. Features and benefits
Fully static operation
5 V, 10 V, and 15 V parametric ratings
Standardized symmetrical output characteristics
Inputs and outputs are protected against electrostatic effects
Specified from 40 C to +85 C and 40 C to +125 C
Complies with JEDEC standard JESD 13-B
3. Ordering information
Table 1.
Ordering information
All types operate from 40 C to +125 C.
Type number
Package
HEF4082BT
Name
Description
Version
SO14
plastic small outline package; 14 leads; body width 3.9 mm
SOT108-1
4. Functional diagram
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Fig 1.
Functional diagram
Fig 2.
Logic diagram (one gate)
DDD
HEF4082B
Nexperia
Dual 4-input AND gate
5. Pinning information
5.1 Pinning
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Fig 3.
Pin configuration
5.2 Pin description
Table 2.
Pin description
Symbol
Pin
Description
1A, 1B, 1C, 1D
2, 3, 4, 5
input
2A, 2B, 2C, 2D
9, 10, 11, 12
input
1Y, 2Y
1, 13
output
n.c.
6, 8
not connected
VSS
7
ground (0 V)
VDD
14
supply voltage
6. Functional description
Table 3.
Function table[1]
Input
Output
nA
nB
nC
nD
nY
L
X
X
X
L
X
L
X
X
L
X
X
L
X
L
X
X
X
L
L
H
H
H
H
H
[1]
H = HIGH voltage level; L = LOW voltage level; X = don’t care.
HEF4082B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 28 May 2015
©
Nexperia B.V. 2017. All rights reserved
2 of 11
HEF4082B
Nexperia
Dual 4-input AND gate
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to VSS = 0 V (ground).
Symbol
Parameter
VDD
supply voltage
Conditions
VI < 0.5 V or VI > VDD + 0.5 V
Min
Max
0.5
+18
V
10
mA
IIK
input clamping current
VI
input voltage
IOK
output clamping current
II/O
input/output current
IDD
supply current
Tstg
storage temperature
65
+150
C
Tamb
ambient temperature
40
+125
C
Ptot
total power dissipation
-
500
mW
-
100
mW
0.5
VO < 0.5 V or VO > VDD + 0.5 V
[1]
VDD + 0.5 V
-
10
mA
-
10
mA
-
50
mA
Tamb = 40 C to + 125 C
SO14
P
-
Unit
power dissipation
per output
[1]
For SO14 packages: above Tamb = 70 C, Ptot derates linearly with 8 mW/K.
8. Recommended operating conditions
Table 5.
Recommended operating conditions
Symbol
Parameter
VDD
VI
Conditions
Min
Max
Unit
supply voltage
3
15
V
input voltage
0
VDD
V
Tamb
ambient temperature
in free air
40
+125
C
t/V
input transition rise and fall rate
VDD = 5 V
-
3.75
ns/V
VDD = 10 V
-
0.5
ns/V
VDD = 15 V
-
0.08
ns/V
HEF4082B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 28 May 2015
©
Nexperia B.V. 2017. All rights reserved
3 of 11
HEF4082B
Nexperia
Dual 4-input AND gate
9. Static characteristics
Table 6.
Static characteristics
VSS = 0 V; VI = VSS or VDD; unless otherwise specified.
Symbol Parameter
VIH
VIL
VOH
VOL
IOH
IOL
HIGH-level
input voltage
LOW-level
input voltage
IO < 1 A
IO < 1 A
HIGH-level
output voltage
IO < 1 A
LOW-level
output voltage
IO < 1 A
HIGH-level
output current
LOW-level
output current
II
input leakage
current
IDD
supply current
CI
Conditions
input
capacitance
HEF4082B
Product data sheet
VDD
Tamb = 40 C Tamb = +25 C Tamb = +85 C Tamb = +125 C Unit
Min
Max
Min
Max
Min
Max
Min
Max
5V
3.5
-
3.5
-
3.5
-
3.5
-
V
10 V
7.0
-
7.0
-
7.0
-
7.0
-
V
15 V
11.0
-
11.0
-
11.0
-
11.0
-
V
5V
-
1.5
-
1.5
-
1.5
-
1.5
V
10 V
-
3.0
-
3.0
-
3.0
-
3.0
V
15 V
-
4.0
-
4.0
-
4.0
-
4.0
V
5V
4.95
-
4.95
-
4.95
-
4.95
-
V
10 V
9.95
-
9.95
-
9.95
-
9.95
-
V
15 V
14.95
-
14.95
-
14.95
-
14.95
-
V
5V
-
0.05
-
0.05
-
0.05
-
0.05
V
10 V
-
0.05
-
0.05
-
0.05
-
0.05
V
15 V
-
0.05
-
0.05
-
0.05
-
0.05
V
VO = 2.5 V
5V
-
1.7
-
1.4
-
1.1
-
1.1
mA
VO = 4.6 V
5V
-
0.64
-
0.5
-
0.36
-
0.36
mA
VO = 9.5 V
10 V
-
1.6
-
1.3
-
0.9
-
0.9
mA
VO = 13.5 V
15 V
-
4.2
-
3.4
-
2.4
-
2.4
mA
VO = 0.4 V
5V
0.64
-
0.5
-
0.36
-
0.36
-
mA
VO = 0.5 V
10 V
1.6
-
1.3
-
0.9
-
0.9
-
mA
VO = 1.5 V
15 V
4.2
-
3.4
-
2.4
-
2.4
-
mA
15 V
-
0.1
-
0.1
-
1.0
-
1.0
A
all valid input 5 V
combinations; 10 V
IO = 0 A
15 V
-
0.25
-
0.25
-
7.5
-
7.5
A
-
0.5
-
0.5
-
15.0
-
15.0
A
-
1.0
-
1.0
-
30.0
-
30.0
A
-
-
-
7.5
-
-
-
-
pF
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 28 May 2015
©
Nexperia B.V. 2017. All rights reserved
4 of 11
HEF4082B
Nexperia
Dual 4-input AND gate
10. Dynamic characteristics
Table 7.
Dynamic characteristics
Tamb = 25 C; CL = 50 pF; tr = tf 20 ns; waveforms see Figure 4; test circuit see Figure 5; unless otherwise specified. [1]
Symbol Parameter
propagation delay
tpd
Conditions
nA, nB, nC,
nD to nY
HIGH to LOW output nY
transition time
tTHL
LOW to HIGH output nY
transition time
tTLH
VDD
Min
Typ
Max
Unit
38 + 0.55 CL
-
65
125
ns
10 V
19 + 0.23 CL
-
30
60
ns
15 V
17 + 0.16 CL
-
25
45
ns
5V
10 + 1.0 CL
-
60
120
ns
10 V
9 + 0.42 CL
-
30
60
ns
15 V
6 + 0.28 CL
-
20
40
ns
5V
10 + 1.0 CL
-
60
120
ns
10 V
9 + 0.42 CL
-
30
60
ns
15 V
6 + 0.28 CL
-
20
40
ns
5V
Extrapolation formula
[2]
[1]
The typical value of the propagation delay and output transition time can be calculated with the extrapolation formula (CL in pF).
[2]
tpd is the same as tPHL and tPLH.
Table 8.
Dynamic power dissipation
VSS = 0 V; tr = tf 20 ns; Tamb = 25 C.
Symbol Parameter
PD
dynamic power dissipation
VDD
Typical formula
where:
5V
PD = 1500 fi + (fo CL) VDD (W) fi = input frequency in MHz;
2
10 V PD = 6700 fi + (fo CL) VDD2 (W) fo = output frequency in MHz;
15 V PD = 16800 fi + (fo CL) VDD2 (W) CL = output load capacitance in pF;
(fo CL) = sum of the outputs;
VDD = supply voltage in V.
HEF4082B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 28 May 2015
©
Nexperia B.V. 2017. All rights reserved
5 of 11
HEF4082B
Nexperia
Dual 4-input AND gate
11. Waveforms
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